The interfacial layer effect on bi-stable resistive switching phenomenon in MnOx thin film

2015 ◽  
Vol 107 (5) ◽  
pp. 053503 ◽  
Author(s):  
Min Kyu Yang ◽  
Gun Hwan Kim ◽  
Hyunsu Ju ◽  
Jeon-Kook Lee ◽  
Han-Cheol Ryu
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Interfacial Layer ◽  
Switching Phenomenon ◽  
Layer Effect

Impact of AlOy Interfacial Layer on Resistive Switching Performance of Flexible HfOx/AlOy ReRAMs

2021 ◽  
pp. 1-7
Author(s):  
S. Biswas ◽  
A. D. Paul ◽  
P. Das ◽  
P. Tiwary ◽  
H. J. Edwards ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Interfacial Layer ◽  
Switching Performance

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

Multi-stage switching phenomenon in ultra-thin Ag films embedded into SrCoO3 multilayer films constructed resistive switching memory devices

2018 ◽  
Vol 11 (02) ◽  
pp. 1850038 ◽  
Author(s):  
Shuangsuo Mao ◽  
Xuejiao Zhang ◽  
Bai Sun ◽  
Bing Li ◽  
Shouhui Zhu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Multilayer Films ◽  
Text Structure ◽  
Switching Effect ◽  
Access Memory ◽  
Multi Stage ◽  
Switching Phenomenon ◽  
Resistance Random Access Memory ◽  
Resistive Switching Effect

In this work, Ti and SrCoO3 (SCO) have been used for preparing the resistance random access memory (RRAM) with Ti/(SCO/Ag)[Formula: see text]/SCO/Ti ([Formula: see text], 1, 2, 3) structures. It is found that the as-prepared device with Ti/SCO/Ti ([Formula: see text]) structure represents the nonobvious resistive switching effect. However, it displays a more obvious resistive switching effect in the Ti/SCO/Ag/SCO/Ti ([Formula: see text]) device. In particular, a multi-stage switching phenomenon is observed when ultra-thin Ag films was embedded into SrCoO3 multilayer films. Finally, the multi-stage switching effect is explained by the model of conductive filaments formed step-by-step.

Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories

2011 ◽  
Vol 110 (11) ◽  
pp. 114117 ◽  
Author(s):  
Dai-Ying Lee ◽  
Tseung-Yuen Tseng
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Ga2o3 Thin Film

Controlling the ferroelectric and resistive switching properties of a BiFeO3thin film prepared using sub-5 nm dimension nanoparticles

2017 ◽  
Vol 19 (38) ◽  
pp. 26085-26097 ◽  
Author(s):  
Mandar M. Shirolkar ◽  
Jieni Li ◽  
Xiaolei Dong ◽  
Ming Li ◽  
Haiqian Wang
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Film Formation ◽  
Thin Film Formation

The effects of thin film formation on the multiferroic and resistive switching properties of sub-5 nm BiFeO3nanoparticles were investigated.

Ultra-thin platinum interfacial layer assisted-photovoltaic response of transparent Pb(Zr,Ti)O 3 thin film capacitors

Solar Energy ◽  
2015 ◽  
Vol 111 ◽  
pp. 118-124 ◽  
Author(s):  
G. Anoop ◽  
Juhee Seo ◽  
Chang Jo Han ◽  
Hyeon Jun Lee ◽  
Gil Woong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Interfacial Layer ◽  
Photovoltaic Response ◽  
Thin Film Capacitors ◽  
Thin Platinum

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

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