Forming-free resistive switching behaviors in Cr-embedded Ga2O3 thin film memories

2011 ◽  
Vol 110 (11) ◽  
pp. 114117 ◽  
Author(s):  
Dai-Ying Lee ◽  
Tseung-Yuen Tseng
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Ga2o3 Thin Film

scholarly journals High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

2021 ◽  
Vol 9 (13) ◽  
pp. 4522-4531
Author(s):  
Chao Yun ◽  
Matthew Webb ◽  
Weiwei Li ◽  
Rui Wu ◽  
Ming Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Resistive Switching ◽  
Growth Temperature ◽  
High Performance ◽  
20 Nm

Interfacial resistive switching and composition-tunable RLRS are realized in ionically conducting Na0.5Bi0.5TiO3 thin films, allowing optimised ON/OFF ratio (>104) to be achieved with low growth temperature (600 °C) and low thickness (<20 nm).

Fast-Response X-ray Detector Based on Nanocrystalline Ga2O3 Thin Film Prepared at Room Temperature

2021 ◽  
pp. 149619
Author(s):  
Manni Chen ◽  
Zhipeng Zhang ◽  
Runze Zhan ◽  
Juncong She ◽  
Shaozhi Deng ◽  
...  
Keyword(s):  
Thin Film ◽  
Room Temperature ◽  
Fast Response ◽  
X Ray ◽  
Ga2o3 Thin Film

Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN∕Al2O3 prepared by pulsed laser deposition

2006 ◽  
Vol 89 (18) ◽  
pp. 182906 ◽  
Author(s):  
Sang-A Lee ◽  
Jae-Yeol Hwang ◽  
Jong-Pil Kim ◽  
Se-Young Jeong ◽  
Chae-Ryong Cho
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Dielectric Characterization ◽  
Ga2o3 Thin Film

Controlling the ferroelectric and resistive switching properties of a BiFeO3thin film prepared using sub-5 nm dimension nanoparticles

2017 ◽  
Vol 19 (38) ◽  
pp. 26085-26097 ◽  
Author(s):  
Mandar M. Shirolkar ◽  
Jieni Li ◽  
Xiaolei Dong ◽  
Ming Li ◽  
Haiqian Wang
Keyword(s):  
Thin Film ◽  
Resistive Switching ◽  
Film Formation ◽  
Thin Film Formation

The effects of thin film formation on the multiferroic and resistive switching properties of sub-5 nm BiFeO3nanoparticles were investigated.

scholarly journals Resistive switching in diamondoid thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
A. Jantayod ◽  
D. Doonyapisut ◽  
T. Eknapakul ◽  
M. F. Smith ◽  
W. Meevasana
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Transport Properties ◽  
Resistive Switching ◽  
Electrical Transport ◽  
Hysteresis Curve ◽  
Applied Potential ◽  
Electrical Transport Properties ◽  
Non Volatile Memory ◽  
Memory Applications

Abstract The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through $$I(0)=0$$ I ( 0 ) = 0 linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.

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