scholarly journals Probing the anisotropic behaviors of black phosphorus by transmission electron microscopy, angular-dependent Raman spectra, and electronic transport measurements

2015 ◽  
Vol 107 (2) ◽  
pp. 021906 ◽  
Author(s):  
Wanglin Lu ◽  
Xiaomeng Ma ◽  
Zhen Fei ◽  
Jianguang Zhou ◽  
Zhiyong Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectra ◽  
Electronic Transport ◽  
Black Phosphorus ◽  
Transport Measurements ◽  
Transmission Electron

Raman Spectroscopy Analysis of Nitrogen Ion Implantation in Silicon and Correlation with Transmission Electron Microscopy

1992 ◽  
Vol 279 ◽  
Author(s):  
A. PéRez-Rodríguez ◽  
A. Romano-Rodríguez ◽  
J. R. Morante ◽  
J. Esteve ◽  
J. Montserrat
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Annealing Treatment ◽  
Structural Features ◽  
Spectroscopy Analysis ◽  
Subsurface Region ◽  
Transmission Electron ◽  
Nitrogen Ion

ABSTRACTIn this work Si samples implanted with nitrogen (N+ or N2+) at a dose of 1017 cm−2 are characterized by Raman spectroscopy and cross section transmission electron microscopy (XTEM). The correlation between the Raman spectra obtained with different excitation wavelengths and XTEM observations allows to determine the structural features related to the layers contributing to the total spectra. The evolution of these features with the annealing treatments (up to 1150°C) is studied. The results obtained show, after the annealing treatment at the highest temperature, the presence of silicon nitride precipitates in the silicon subsurface region, and the formation of a nitrogen rich polycrystalline Si layer with Si3N4 grains. The Raman spectra from the subsurface region show a remaining shift of -0.15 cm−1 when compared to the spectra from unimplanted Si. This shift, together with the similar shape of both Raman lines, suggests the presence in this region of an average tensile stress of 37.5 MPa.

scholarly journals Characterization of Polysilicon Films by Raman Spectroscopy and Transmission Electron Microscopy: a Comparative Study

1993 ◽  
Vol 324 ◽  
Author(s):  
David R. Tallant ◽  
Thomas J. Headley ◽  
John W. Medernach ◽  
Franz Geyling
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Cross Section ◽  
Nanometer Scale ◽  
Sampling Depth ◽  
Transmission Electron ◽  
Polysilicon Films

AbstractSamples of chemically-vapor-deposited sub-micrometer-thick films of polysilicon were analyzed by transmission electron microscopy (TEM) in cross-section and by Raman spectroscopy with illumination at their surface. TEM and Raman spectroscopy both find varying amounts of polycrystalline and amorphous silicon in the wafers. Raman spectra obtained using blue, green and red excitation wavelengths to vary the Raman sampling depth are compared with TEM crosssections of these films. Some films have Raman spectra with a band near 497 cm−1, corresponding to numerous nanometer-scale faulted regions in the TEM micrographs.

Structure of Oxides Grown on Zr-20Nb Alloy

1994 ◽  
Vol 357 ◽  
Author(s):  
O.T. Woo ◽  
D.J. Lockwood ◽  
Y.P. Lin ◽  
V.F. Urbanic
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Raman Spectra ◽  
High Symmetry ◽  
X Ray Diffraction ◽  
Short Term ◽  
X Ray ◽  
Transmission Electron

AbstractOxides grown on Zr-20Nb were characterized by Raman Spectroscopy (RS), X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). These oxides were steamformed at 400°C, water-formed at 360 °C and at 300 °C, and air-grown at 400°C. For the oxides grown after relatively short exposures at 360°C and at 400°C, Raman spectra revealed broad peaks at 260 and 660 cm− indicating a crystal structure with high symmetry. Comparison with reference Raman spectra of cubic (c), tetragonal (t), and monoclinic (m) ZrO2 suggested that the oxide was predominantly nearly-cubic (tetragonal with c/a ratio ≈ 1), with minor amounts of moxide. The tetragonality is found to be consistent with TEM analyses and XRD results which showed the presence of a doublet near 2θ ° 74°. The crystal structure in the short-term exposed oxides is interpreted in terms of a tetragonal distortion arising from the displacement of oxygen atoms within the cubic ZrO2 crystal structure. For oxides grown after longer periods of exposure at 300°C and at 400°C, RS and XRD indicate increased amounts of m-oxide.

Study on Structural, Electrical and Optical Properties of Microcrystalline Si:H and SiC:H Films

1993 ◽  
Vol 297 ◽  
Author(s):  
F. Demichelis ◽  
G. Crovini ◽  
C.F. Pirri ◽  
E. Tresso ◽  
A. Rubino ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Optical Properties ◽  
Electronic Transport ◽  
Transport Mechanisms ◽  
Conductivity Measurements ◽  
Electrical And Optical Properties ◽  
X Ray ◽  
Transmission Electron ◽  
Wide Range

We report results on a study on μc-Si:H and (μc-SiC:H films deposited by PECVD. The crystallinity fraction and the crystal sizes have been evaluated by X-ray diffractometry, Raman spectroscopy and Transmission Electron Microscopy(TEM). Infrared vibrational spectra of both μc-Si:H and |μc-SiC:H samples have been studied to obtain information on their structure. A comparison between the structure of the amorphous and diphasic amorphous-microcrystalline samples has been performed. Optical properties were obtained by transmission-reflectance and PDS measurements. Electronic transport mechanisms through the conductivity measurements in a wide range of temperatures (50-500 K) have been defined. Structural and electron density models have been discussed and used to interpret the experimental results.

scholarly journals Visualizing Oxidation Mechanisms in Few-Layered Black Phosphorus via In Situ Transmission Electron Microscopy

2020 ◽  
Vol 12 (13) ◽  
pp. 15844-15854
Author(s):  
Andrew E. Naclerio ◽  
Dmitri N. Zakharov ◽  
Jeevesh Kumar ◽  
Bridget Rogers ◽  
Cary L. Pint ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Black Phosphorus ◽  
Transmission Electron ◽  
Oxidation Mechanisms

Phonon Confinement in SiC Nanocrystals: Comparison of the Size Determination Using Transmission Electron Microscopy and Raman Spectroscopy

2007 ◽  
Vol 61 (8) ◽  
pp. 855-859 ◽  
Author(s):  
M. Havel ◽  
D. Baron ◽  
L. Mazerolles ◽  
Ph. Colomban
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Phonon Confinement ◽  
Silicon Carbide Fibers ◽  
Transmission Electron ◽  
Crystallite Dimension ◽  
Average Size ◽  
Actual Size

Silicon carbide fibers of different generation/processing routes (NLM-Nicalon and Tyranno SA3) were thermally treated to trigger the growth of nanocrystals, which were analyzed using Raman spectroscopy and transmission electron microscopy (TEM). The nanocrystals were also aged in molten sodium nitrate to investigate their reactivity. The spatial correlation model has been used to model the Raman spectra and extract accurate and statistical information on the nanocrystallites' structure and dimension. For the NLM fibers, an average size of 2.5 to 7.0 nm was calculated, which was in good agreement with TEM observations. For the Tyranno SA3 fiber, despite the heavily faulted stacking sequence, the Raman peaks remained sharp, indicating that the crystallite dimension calculated from the Raman spectra is only dependent on the actual size of the nanocrystals and is not affected by the sequence of the stacking faults.

Techniques for Transmission Electron Microscopy of Fiber-Matrix Interfaces in Aluminum Alloy-Boron Composites by Ion Erosio

1971 ◽  
Vol 29 ◽  
pp. 204-205
Author(s):  
G. G. Shaw
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Aluminum Alloy ◽  
Electron Beam ◽  
Pure Aluminum ◽  
Ion Milling ◽  
Transmission Electron ◽  
Fiber Matrix ◽  
Ion Erosion ◽  
Row Of Fibers

The morphology and composition of the fiber-matrix interface can best be studied by transmission electron microscopy and electron diffraction. For some composites satisfactory samples can be prepared by electropolishing. For others such as aluminum alloy-boron composites ion erosion is necessary.When one wishes to examine a specimen with the electron beam perpendicular to the fiber, preparation is as follows: A 1/8 in. disk is cut from the sample with a cylindrical tool by spark machining. Thin slices, 5 mils thick, containing one row of fibers, are then, spark-machined from the disk. After spark machining, the slice is carefully polished with diamond paste until the row of fibers is exposed on each side, as shown in Figure 1.In the case where examination is desired with the electron beam parallel to the fiber, preparation is as follows: Experimental composites are usually 50 mils or less in thickness so an auxiliary holder is necessary during ion milling and for easy transfer to the electron microscope. This holder is pure aluminum sheet, 3 mils thick.

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