Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficient HfO2/TiN resistive switching memory cells

2015 ◽  
Vol 107 (1) ◽  
pp. 013502 ◽  
Author(s):  
Ran Jiang ◽  
Zhengran Wu ◽  
Xianghao Du ◽  
Zuyin Han ◽  
Weideng Sun
Keyword(s):  
Resistive Switching ◽  
Field Effect ◽  
Memory Cells ◽  
Resistive Switching Memory ◽  
Enhanced Resistance ◽  
Resistance Performance ◽  
Switching Memory

scholarly journals Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells

2010 ◽  
Vol 107 (5) ◽  
pp. 054517 ◽  
Author(s):  
Herbert Schroeder ◽  
Victor V. Zhirnov ◽  
Ralph K. Cavin ◽  
Rainer Waser
Keyword(s):  
Resistive Switching ◽  
Memory Cells ◽  
Resistive Switching Memory ◽  
Switching Memory

Growth and self-assembly of BaTiO3 nanocubes for resistive switching memory cells

2014 ◽  
Vol 214 ◽  
pp. 38-41 ◽  
Author(s):  
Dewei Chu ◽  
Xi Lin ◽  
Adnan Younis ◽  
Chang Ming Li ◽  
Feng Dang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Self Assembly ◽  
Memory Cells ◽  
Resistive Switching Memory ◽  
Switching Memory

Evidences of Electrode-Controlled Retention Properties in Ta2O5-Based Resistive-Switching Memory Cells

2014 ◽  
Vol 3 (11) ◽  
pp. Q79-Q81 ◽  
Author(s):  
L. Goux ◽  
A. Fantini ◽  
Y. Y. Chen ◽  
A. Redolfi ◽  
R. Degraeve ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Cells ◽  
Resistive Switching Memory ◽  
Switching Memory
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