Tuning the resistive switching memory in a metal–ferroelectric–semiconductor capacitor by field effect structure

2015 ◽  
Vol 356 ◽  
pp. 898-904 ◽  
Author(s):  
S.Y. Wang ◽  
F. Guo ◽  
X. Wang ◽  
W.F. Liu ◽  
J. Gao
2013 ◽  
Vol 34 (10) ◽  
pp. 1265-1267 ◽  
Author(s):  
Shih-Chieh Wu ◽  
Hsien-Tsung Feng ◽  
Ming-Jiue Yu ◽  
I-Ting Wang ◽  
Tuo-Hung Hou

2010 ◽  
Vol 31 (9) ◽  
pp. 1020-1022 ◽  
Author(s):  
C. H. Cheng ◽  
Albert Chin ◽  
F. S. Yeh

2016 ◽  
Vol 72 (2) ◽  
pp. 25-33 ◽  
Author(s):  
Y.-C. Chen ◽  
Y.-F. Chang ◽  
X. Wu ◽  
M. Guo ◽  
B. Fowler ◽  
...  

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