Atomic friction at exposed and buried graphite step edges: Experiments and simulations

2015 ◽  
Vol 106 (23) ◽  
pp. 231603 ◽  
Author(s):  
Zhijiang Ye ◽  
Ashlie Martini
Keyword(s):  
Atomic Friction ◽  
Step Edges

Correlation Between Probe Shape and Atomic Friction Peaks at Graphite Step Edges

2012 ◽  
Vol 50 (1) ◽  
pp. 49-57 ◽  
Author(s):  
Yalin Dong ◽  
Xin Z. Liu ◽  
Philip Egberts ◽  
Zhijiang Ye ◽  
Robert W. Carpick ◽  
...  
Keyword(s):  
Atomic Friction ◽  
Step Edges

Effect of tip shape on atomic-friction at graphite step edges

2013 ◽  
Vol 103 (8) ◽  
pp. 081601 ◽  
Author(s):  
Zhijiang Ye ◽  
Alberto Otero-de-la-Roza ◽  
Erin R. Johnson ◽  
Ashlie Martini
Keyword(s):  
Atomic Friction ◽  
Step Edges

Multislice calculations of RHEED patterns from vicinal Si (001)

1993 ◽  
Vol 51 ◽  
pp. 1000-1001
Author(s):  
Scott Lordi
Keyword(s):  
Misorientation Angle ◽  
Incident Angle ◽  
Incident Beam ◽  
Experimental Results ◽  
Bragg Condition ◽  
Vicinal Surfaces ◽  
Kinematic Theory ◽  
Step Edges

Vicinal Si (001) surfaces are interesting because they are good substrates for the growth of III-V semiconductors. Spots in RHEED patterns from vicinal surfaces are split due to scattering from ordered step arrays and this splitting can be used to determine the misorientation angle, using kinematic arguments. Kinematic theory is generally regarded to be inadequate for the calculation of RHEED intensities; however, only a few dynamical RHEED simulations have been attempted for vicinal surfaces. The multislice formulation of Cowley and Moodie with a recently developed edge patching method was used to calculate RHEED patterns from vicinal Si (001) surfaces. The calculated patterns are qualitatively similar to published experimental results and the positions of the split spots quantitatively agree with kinematic calculations.RHEED patterns were calculated for unreconstructed (bulk terminated) Si (001) surfaces misoriented towards [110] ,with an energy of 15 keV, at an incident angle of 36.63 mrad ([004] bragg condition), and a beam azimuth of [110] (perpendicular to the step edges) and the incident beam pointed down the step staircase.

scholarly journals Step Edges in Thin Films of Lamellar-Forming Diblock Copolymer

2012 ◽  
Vol 45 (23) ◽  
pp. 9531-9538 ◽  
Author(s):  
P. Stasiak ◽  
J. D. McGraw ◽  
K. Dalnoki-Veress ◽  
M. W. Matsen
Keyword(s):  
Thin Films ◽  
Diblock Copolymer ◽  
Step Edges

scholarly journals Role of step edges on the structure formation of α-6T on Ag(441)

2018 ◽  
Vol 667 ◽  
pp. 17-24 ◽  
Author(s):  
Thorsten Wagner ◽  
Daniel Roman Fritz ◽  
Zdena Rudolfová ◽  
Peter Zeppenfeld
Keyword(s):  
Structure Formation ◽  
Step Edges

Oxidation of Au on vicinal W(110): Role of step edges and facets

2007 ◽  
Vol 75 (20) ◽  
Author(s):  
A. Varykhalov ◽  
O. Rader ◽  
V. K. Adamchuk ◽  
W. Gudat ◽  
B. E. Koel ◽  
...  
Keyword(s):  
Step Edges

A New, Nearly Single-Domain Surface Structure of Homoepitaxial Diamondr (001) Films

1996 ◽  
Vol 423 ◽  
Author(s):  
Yalei Kuang ◽  
Naesung Lee ◽  
Andrzej Badzian ◽  
Teresa Badzian ◽  
Tien T. Tsong
Keyword(s):  
Surface Structure ◽  
Natural Diamond ◽  
Single Layer ◽  
Chemical Vapor ◽  
Single Domain ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Plasma Chemical Vapor Deposition ◽  
Boron Doped ◽  
Step Edges

AbstractBoron-doped homoepitaxial diamond films were grown on natural diamond (001) substrates using microwave-assisted plasma chemical vapor deposition techniques. The surface structures were investigated using scanning tunneling microscopy (STM). This showed a dimertype 2×1 reconstruction structure with single-layer steps where dimer rows on the upper terrace are normal to or parallel to the step edges. We found that dimer rows parallel to the step edges are much longer than those normal to the step edges. The nearly single-domain surface structure observed by STM is in agreement with the low-energy electron diffraction (LEED) patterns from these surfaces. The high atomic resolution STM image showed that the local 1×1 configurations exist.

scholarly journals Morphology of monatomic step edges on vicinal Si(001)

1993 ◽  
Vol 48 (19) ◽  
pp. 14269-14275 ◽  
Author(s):  
H. J. W. Zandvliet ◽  
H. B. Elswijk
Keyword(s):  
Step Edges

scholarly journals Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors

2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Tao He ◽  
Yanfei Wu ◽  
Gabriele D’Avino ◽  
Elliot Schmidt ◽  
Matthias Stolte ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Step Edges
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