Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy

2015 ◽  
Vol 117 (21) ◽  
pp. 215704 ◽  
Author(s):  
Louise C. Hirst ◽  
Matthew P. Lumb ◽  
Josh Abell ◽  
Chase T. Ellis ◽  
Joseph G. Tischler ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Lattice Matched

Raman investigation of molecular beam epitaxy grown InGaAlAs epilayers lattice matched to InP for low Al concentrations

1998 ◽  
Vol 83 (4) ◽  
pp. 2266-2271 ◽  
Author(s):  
W. J. Keeler ◽  
G. A. Keeler ◽  
D. A. Harrison ◽  
Z. R. Wasilewski
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Matched

GaN/AlN multiple quantum wells grown by molecular beam epitaxy: effect of growth kinetics on radiative recombination efficiency

2020 ◽  
Vol 709 ◽  
pp. 138216
Author(s):  
Chirantan Singha ◽  
Sayantani Sen ◽  
Alakananda Das ◽  
Anirban Saha ◽  
Pallabi Pramanik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Kinetics ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Recombination Efficiency

Epitaxial growth of lattice-matched InSb/CdTe heterostructures on the GaAs(111) substrate by molecular beam epitaxy

2020 ◽  
Vol 116 (12) ◽  
pp. 122102 ◽  
Author(s):  
Jiaming Li ◽  
Chenjia Tang ◽  
Peng Du ◽  
Yilan Jiang ◽  
Yong Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Lattice Matched

In0.53Ga0.47As/GaAs0.5Sb0.5/In0.52Al0.48As asymmetric type II quantum well structures lattice-matched to InP grown by molecular beam epitaxy

2002 ◽  
Vol 237-239 ◽  
pp. 1499-1503 ◽  
Author(s):  
Y. Kawamura ◽  
A. Kondo ◽  
M. Fujimoto ◽  
T. Higashino ◽  
H. Takasaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Type Ii ◽  
Quantum Well Structures ◽  
Lattice Matched

Photoreflectance spectra of a ZnO heteroepitaxial film on the nearly lattice-matched ScAlMgO4 (0001) substrate grown by laser molecular-beam epitaxy

2002 ◽  
Vol 80 (16) ◽  
pp. 2860-2862 ◽  
Author(s):  
S. F. Chichibu ◽  
A. Tsukazaki ◽  
M. Kawasaki ◽  
K. Tamura ◽  
Y. Segawa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Laser Molecular Beam Epitaxy ◽  
Lattice Matched

scholarly journals Exciton spectra of ZnO epitaxial layers on lattice-matched substrates grown with laser-molecular-beam epitaxy

2000 ◽  
Vol 76 (24) ◽  
pp. 3549-3551 ◽  
Author(s):  
T. Makino ◽  
C. H. Chia ◽  
N. T. Tuan ◽  
Y. Segawa ◽  
M. Kawasaki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Laser Molecular Beam Epitaxy ◽  
Lattice Matched

Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs

2013 ◽  
Vol 1561 ◽  
Author(s):  
Cheng-Ying Huang ◽  
Jeremy J. M. Law ◽  
Hong Lu ◽  
Mark J. W. Rodwell ◽  
Arthur C. Gossard
Keyword(s):  
Molecular Beam Epitaxy ◽  
Carrier Concentration ◽  
Electron Mobility ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Barrier Material ◽  
Double Heterostructures ◽  
Thin Channel ◽  
Si Doped ◽  
Lattice Matched

ABSTRACTWe investigated AlAs0.56Sb0.44 epitaxial layers lattice-matched to InP grown by molecular beam epitaxy (MBE). Silicon (Si) and tellurium (Te) were studied as n-type dopants in AlAs0.56Sb0.44 material. Similar to most Sb-based materials, AlAs0.56Sb0.44 demonstrates a maximum active carrier concentration around low-1018 cm-3 when using Te as a dopant. We propose the use of a heavily Si-doped InAlAs layer embedded in the AlAsSb barrier as a modulation-doped layer. The In0.53Ga0.47As/AlAs0.56Sb0.44 double heterostructures with a 10 nm InGaAs well show an electron mobility of about 9400 cm2/V・s at 295 K and 32000 cm2/V・s at 46 K. A thinner 5 nm InGaAs well has an electron mobility of about 4300 cm2/V・s at 295 K. This study demonstrates that AlAs0.56Sb0.44 is a promising barrier material for highly scaled InGaAs MOSFETs and HEMTs.

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