Impact of repeated uniaxial mechanical strain on p-type flexible polycrystalline thin film transistors

2015 ◽  
Vol 106 (18) ◽  
pp. 183503 ◽  
Author(s):  
Bo-Wei Chen ◽  
Ting-Chang Chang ◽  
Yu-Ju Hung ◽  
Tien-Yu Hsieh ◽  
Ming-Yen Tsai ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Mechanical Strain ◽  
Polycrystalline Thin Film ◽  
P Type

Effect of Mechanical Strain on Electrical Performance of Flexible P-Type SnO Thin-Film Transistors

2019 ◽  
Vol 66 (12) ◽  
pp. 5183-5186
Author(s):  
Shu-Ming Hsu ◽  
Jyun-Ci He ◽  
Yun-Shiuan Li ◽  
Dung-Yue Su ◽  
Feng-Yu Tsai ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Mechanical Strain ◽  
Electrical Performance ◽  
P Type

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

scholarly journals Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

2021 ◽  
Vol 13 (3) ◽  
pp. 4156-4164
Author(s):  
Mari Napari ◽  
Tahmida N. Huq ◽  
David J. Meeth ◽  
Mikko J. Heikkilä ◽  
Kham M. Niang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Surface Passivation ◽  
Cu2o Thin Film ◽  
P Type

Improvement of Reliability for Polycrystalline Thin-Film Transistors Using Self-Aligned Fluorinated Silica Glass Spacers

2005 ◽  
Vol 8 (8) ◽  
pp. G209
Author(s):  
Chun-Hao Tu ◽  
Ting-Chang Chang ◽  
Po-Tsun Liu ◽  
Hsiao-Wen Zan ◽  
Ya-Hsiang Tai ◽  
...  
Keyword(s):  
Thin Film ◽  
Silica Glass ◽  
Thin Film Transistors ◽  
Polycrystalline Thin Film

Electrical characterization of Cu-doped CdS p-type thin film transistors

2021 ◽  
Author(s):  
D. Berman-Mendoza ◽  
O. I. Diaz-Grijalva ◽  
R. López-Delgado ◽  
A. Ramos-Carrazco ◽  
M. E. Alvarez-Ramos ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Electrical Characterization ◽  
P Type

Low temperature processed p-type bottom gate microcrystalline silicon thin film transistors

2010 ◽  
pp. NA-NA
Author(s):  
O. Moustapha ◽  
A. Abramov ◽  
D. Daineka ◽  
M. Oudwan ◽  
Y. Bonnassieux ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
P Type ◽  
Bottom Gate

Low-temperature, inkjet printed p-type copper(i) iodide thin film transistors

2016 ◽  
Vol 4 (43) ◽  
pp. 10309-10314 ◽  
Author(s):  
Chang-Ho Choi ◽  
Jenna Y. Gorecki ◽  
Zhen Fang ◽  
Marshall Allen ◽  
Shujie Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
P Type ◽  
First Time

Low temperature fabrication of printed p-type CuI TFTs was reported for the first time.

Analysis of low frequency noise characteristics in p-type polycrystalline silicon thin film transistors

2017 ◽  
Vol 31 (19-21) ◽  
pp. 1740020
Author(s):  
Yuan Liu ◽  
Yun-Fei En ◽  
Wen-Xiao Fang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Low Frequency ◽  
Gate Oxide ◽  
Localized States ◽  
Frequency Noise ◽  
Silicon Thin Film ◽  
Noise Characteristics ◽  
P Type

Low frequency noises in the p-type polycrystalline silicon thin film transistors are investigated. It shows a pure 1/f[Formula: see text] (with [Formula: see text] near one) noise behavior which can be explained by emission and trapping processes of carriers between trapping states. Subsequently, the gate voltage-dependent drain current noise power spectral densities closely follow the mobility fluctuation model, and the average Hooge’s parameter is then extracted. By considering traditional tunneling processes, the flat-band voltage spectral density is extracted and the concentration of traps in the grain boundary is calculated to be [Formula: see text]. By converting the frequency to tunneling depth of carriers in the gate oxide, the spatial distribution of gate oxide trapped charges are obtained. Finally, the distribution of localized states in the energy band is extracted. The experimental results show an exponential deep states and tail states distribution in the band gap while [Formula: see text] is about [Formula: see text], [Formula: see text] is [Formula: see text][Formula: see text]617 K, [Formula: see text] is [Formula: see text] and [Formula: see text] is [Formula: see text][Formula: see text]265 K.

Solution-processed ternary p-type CuCrO2 semiconductor thin films and their application in transistors

2018 ◽  
Vol 6 (6) ◽  
pp. 1393-1398 ◽  
Author(s):  
Shengbin Nie ◽  
Ao Liu ◽  
You Meng ◽  
Byoungchul Shin ◽  
Guoxia Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Spin Coating ◽  
Thin Film Transistors ◽  
Solution Processed ◽  
Semiconductor Thin Films ◽  
P Type

In this study, transparent p-type CuCrxOy semiconductor thin films were fabricated using spin coating and integrated as channel layers in thin-film transistors (TFTs).

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