scholarly journals Electrical excitation of silicon-vacancy centers in single crystal diamond

2015 ◽  
Vol 106 (17) ◽  
pp. 171102 ◽  
Author(s):  
Amanuel M. Berhane ◽  
Sumin Choi ◽  
Hiromitsu Kato ◽  
Toshiharu Makino ◽  
Norikazu Mizuochi ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electrical Excitation ◽  
Silicon Vacancy ◽  
Single Crystal Diamond

Electrical excitation and charge-state conversion of silicon vacancy color centers in single-crystal diamond membranes

2020 ◽  
Vol 116 (10) ◽  
pp. 101103 ◽  
Author(s):  
Kerem Bray ◽  
Dmitry Yu. Fedyanin ◽  
Igor A. Khramtsov ◽  
Maryna O. Bilokur ◽  
Blake Regan ◽  
...  
Keyword(s):  
Single Crystal ◽  
Charge State ◽  
Color Centers ◽  
Electrical Excitation ◽  
Silicon Vacancy ◽  
Single Crystal Diamond

2D inverse periodic opal structures in single crystal diamond with incorporated silicon-vacancy color centers

2017 ◽  
Vol 73 ◽  
pp. 204-209 ◽  
Author(s):  
Bing Dai ◽  
Guoyang Shu ◽  
Victor Ralchenko ◽  
Andrey Bolshakov ◽  
Dmitry Sovyk ◽  
...  
Keyword(s):  
Single Crystal ◽  
Color Centers ◽  
Silicon Vacancy ◽  
Single Crystal Diamond

Silicon-Vacancy Centers in a single crystal diamond membrane as efficient spin photon interface

2019 ◽  
Author(s):  
Stefan Häußler ◽  
Richard Waltrich ◽  
Gregor Bayer ◽  
Alexander Kubanek
Keyword(s):  
Single Crystal ◽  
Silicon Vacancy ◽  
Single Crystal Diamond

scholarly journals Coupling of silicon-vacancy centers to a single crystal diamond cavity

2012 ◽  
Vol 20 (8) ◽  
pp. 8891 ◽  
Author(s):  
Jonathan C. Lee ◽  
Igor Aharonovich ◽  
Andrew P. Magyar ◽  
Fabian Rol ◽  
Evelyn L. Hu
Keyword(s):  
Single Crystal ◽  
Silicon Vacancy ◽  
Single Crystal Diamond

scholarly journals Diamond photonics platform based on silicon vacancy centers in a single-crystal diamond membrane and a fiber cavity

2019 ◽  
Vol 99 (16) ◽  
Author(s):  
Stefan Häußler ◽  
Julia Benedikter ◽  
Kerem Bray ◽  
Blake Regan ◽  
Andreas Dietrich ◽  
...  
Keyword(s):  
Single Crystal ◽  
Silicon Vacancy ◽  
Single Crystal Diamond

scholarly journals Epitaxial lateral growth of single-crystal diamond under high pressure by a plate-to-plate MPCVD

2021 ◽  
Vol 1 (1) ◽  
pp. 143-149
Author(s):  
Wei Cao ◽  
Deng Gao ◽  
Hongyang Zhao ◽  
Zhibin Ma
Keyword(s):  
High Pressure ◽  
Single Crystal ◽  
Lateral Growth ◽  
Single Crystal Diamond

On The Optimized Nucleation of Near-Single-Crystal Cvd Diamond Film

1995 ◽  
Vol 416 ◽  
Author(s):  
L. C. Chen ◽  
C. C. Juan ◽  
J. Y. Wu ◽  
K. H. Chen ◽  
J. W. Teng
Keyword(s):  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Morphological Evolution ◽  
Present Report ◽  
Ex Situ ◽  
Nucleation Density ◽  
Induced Current ◽  
Current Time ◽  
Single Crystal Diamond

ABSTRACTNear-single-crystal diamond films have been obtained in a number of laboratories recently. The optimization of nucleation density by using a bias-enhanced nucleation (BEN) method is believed to be a critical step. However, the condition of optimized nucleation has never been clearly delineated. In the present report, a novel quantitative technique was established to monitor the nucleation of diamond in-situ. Specifically, the induced current was measured as a function of nucleation time during BEN. The timedependence of induced current was studied under various methane concentrations as well as substrate temperatures. The optimized nucleation condition can be unambiguously determined from the current-time plot. Besides the in-situ current probe, ex-situ x-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were also used to investigate the chemical and morphological evolution. Characteristic XPS and AFM features of optimized nucleation is discussed.

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