Synthesis and characterization of electron doped La0.85Te0.15MnO3 thin film grown on LaAlO3 substrate by pulsed laser deposition technique

2015 ◽  
Author(s):  
Irshad Bhat ◽  
Shahid Husain ◽  
S. I. Patil ◽  
Wasi Khan ◽  
S. Asad Ali
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Synthesis And Characterization ◽  
Deposition Technique

Synthesis and characterization of boron antimonide films by pulsed laser deposition technique

2015 ◽  
Vol 353 ◽  
pp. 439-448 ◽  
Author(s):  
S. Das ◽  
R. Bhunia ◽  
S. Hussain ◽  
R. Bhar ◽  
B.R. Chakraborty ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Synthesis And Characterization ◽  
Deposition Technique

Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN∕Al2O3 prepared by pulsed laser deposition

2006 ◽  
Vol 89 (18) ◽  
pp. 182906 ◽  
Author(s):  
Sang-A Lee ◽  
Jae-Yeol Hwang ◽  
Jong-Pil Kim ◽  
Se-Young Jeong ◽  
Chae-Ryong Cho
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Dielectric Characterization ◽  
Ga2o3 Thin Film

Synthesis and characterization of p-type transparent conducting Ni1-xRuxO (0 ≤x ≤ 0.1) films prepared by pulsed laser deposition

2019 ◽  
Vol 45 (6) ◽  
pp. 7984-7994 ◽  
Author(s):  
Ahmed Alshahrie ◽  
S. Joudakzis ◽  
A.A. Al-Ghamdi ◽  
Lyudmila M. Bronstein ◽  
Waleed E. Mahmoud
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Synthesis And Characterization ◽  
Transparent Conducting ◽  
P Type

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

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