Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

Xiao Shen; Sarit Dhar; Sokrates T. Pantelides

doi:10.1063/1.4917528

Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.4917528 ◽

2015 ◽

Vol 106 (14) ◽

pp. 143504 ◽

Cited By ~ 16

Author(s):

Xiao Shen ◽

Sarit Dhar ◽

Sokrates T. Pantelides

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Trapping ◽

Temperature Electron

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Effect of high‐temperature anneal on interface states generation in stressed metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.104598 ◽

1991 ◽

Vol 58 (6) ◽

pp. 598-600 ◽

Cited By ~ 7

Author(s):

M. Berger ◽

E. Avni ◽

J. Shappir

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Temperature Anneal

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Generation and anneal of a new kind of interface state in stressed and high‐temperature annealed metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.106958 ◽

1992 ◽

Vol 60 (2) ◽

pp. 186-188 ◽

Cited By ~ 6

Author(s):

M. Berger ◽

E. Avni ◽

J. Shappir

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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High-temperature CO2 treatment for improving electrical characteristics of 4H-SiC(0001) metal-oxide-semiconductor devices

Applied Physics Express ◽

10.35848/1882-0786/ac23e8 ◽

2021 ◽

Author(s):

Takuji Hosoi ◽

Momoe Ohsako ◽

Takayoshi SHIMURA ◽

Heiji WATANABE

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Co2 Treatment

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Trapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.107126 ◽

1992 ◽

Vol 60 (16) ◽

pp. 2008-2010 ◽

Cited By ~ 33

Author(s):

D. M. Fleetwood ◽

R. A. Reber ◽

P. S. Winokur

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Trapping

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Temperature dependence of electron trapping in metal‐oxide‐semiconductor devices as a function of the injection mode

Journal of Applied Physics ◽

10.1063/1.341727 ◽

1988 ◽

Vol 64 (4) ◽

pp. 2150-2152 ◽

Cited By ~ 17

Author(s):

G. Sh. Gildenblat ◽

C.‐L. Huang ◽

S. A. Grot

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Trapping ◽

Injection Mode

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Silicon-on-insulator technology for high temperature metal oxide semiconductor devices and circuits

Materials Science and Engineering B ◽

10.1016/0921-5107(94)04018-y ◽

1995 ◽

Vol 29 (1-3) ◽

pp. 7-12 ◽

Cited By ~ 27

Author(s):

Denis Flandre

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Silicon On Insulator Technology

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Improvement on the Electrical Characteristics of HfO[sub x]N[sub y]-Gated Metal-Oxide-Semiconductor Devices by High-Temperature Annealing

Electrochemical and Solid-State Letters ◽

10.1149/1.2337858 ◽

2006 ◽

Vol 9 (11) ◽

pp. F80 ◽

Cited By ~ 3

Author(s):

Chin-Lung Cheng ◽

Kuei-Shu Chang-Liao ◽

Tien-Ko Wang

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

High Temperature Annealing

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Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Current Applied Physics ◽

10.1016/j.cap.2012.04.025 ◽

2012 ◽

Vol 12 ◽

pp. S10-S19 ◽

Cited By ~ 10

Author(s):

Heiji Watanabe ◽

Katsuhiro Kutsuki ◽

Atsushi Kasuya ◽

Iori Hideshima ◽

Gaku Okamoto ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Plasma Nitridation

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