Trapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devices

D. M. Fleetwood; R. A. Reber; P. S. Winokur

doi:10.1063/1.107126

Trapped‐hole annealing and electron trapping in metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.107126 ◽

1992 ◽

Vol 60 (16) ◽

pp. 2008-2010 ◽

Cited By ~ 33

Author(s):

D. M. Fleetwood ◽

R. A. Reber ◽

P. S. Winokur

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Trapping

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Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.4917528 ◽

2015 ◽

Vol 106 (14) ◽

pp. 143504 ◽

Cited By ~ 16

Author(s):

Xiao Shen ◽

Sarit Dhar ◽

Sokrates T. Pantelides

Keyword(s):

High Temperature ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Trapping ◽

Temperature Electron

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Temperature dependence of electron trapping in metal‐oxide‐semiconductor devices as a function of the injection mode

Journal of Applied Physics ◽

10.1063/1.341727 ◽

1988 ◽

Vol 64 (4) ◽

pp. 2150-2152 ◽

Cited By ~ 17

Author(s):

G. Sh. Gildenblat ◽

C.‐L. Huang ◽

S. A. Grot

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Trapping ◽

Injection Mode

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Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Cited By ~ 16

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Gate stack technology for advanced high-mobility Ge-channel metal-oxide-semiconductor devices – Fundamental aspects of germanium oxides and application of plasma nitridation technique for fabrication of scalable oxynitride dielectrics

Current Applied Physics ◽

10.1016/j.cap.2012.04.025 ◽

2012 ◽

Vol 12 ◽

pp. S10-S19 ◽

Cited By ~ 10

Author(s):

Heiji Watanabe ◽

Katsuhiro Kutsuki ◽

Atsushi Kasuya ◽

Iori Hideshima ◽

Gaku Okamoto ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

High Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Plasma Nitridation

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Dry etching of poly-Si/TaN/HfSiON gate stack for advanced complementary metal-oxide-semiconductor devices

Journal of Semiconductors ◽

10.1088/1674-4926/32/7/076001 ◽

2011 ◽

Vol 32 (7) ◽

pp. 076001 ◽

Cited By ~ 2

Author(s):

Yongliang Li ◽

Qiuxia Xu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Dry Etching ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack

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Fromab initioproperties of the Si-SiO2interface, to electrical characteristics of metal-oxide-semiconductor devices

Journal of Physics Conference Series ◽

10.1088/1742-6596/242/1/012010 ◽

2010 ◽

Vol 242 ◽

pp. 012010 ◽

Cited By ~ 1

Author(s):

S Markov ◽

P Sushko ◽

C Fiegna ◽

E Sangiorgi ◽

A Shluger ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

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Studies of interface states of silicon metal-oxide-semiconductor devices by dynamic conductance and noise measurements and effects of bias-temperature stresses

Thin Solid Films ◽

10.1016/0040-6090(82)90138-9 ◽

1982 ◽

Vol 93 (3-4) ◽

pp. 321-330 ◽

Cited By ~ 4

Author(s):

K.L. Ngai ◽

S.T. Liu

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Interface States ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Stresses ◽

Noise Measurements ◽

Dynamic Conductance

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Quantum mechanical study of trapped charge relaxation characteristics in metal-oxide-semiconductor devices

Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030) ◽

10.1109/tencon.1999.818624 ◽

2003 ◽

Author(s):

Q.D. Mohd Khosru ◽

Md. Nasir Uddin ◽

M. Rezwan Khan

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Charge Relaxation ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

Relaxation Characteristics ◽

Trapped Charge

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Energy distribution of slow trapping states in metal‐oxide‐semiconductor devices after Fowler–Nordheim injection

Journal of Applied Physics ◽

10.1063/1.354738 ◽

1993 ◽

Vol 74 (3) ◽

pp. 2125-2127 ◽

Cited By ~ 20

Author(s):

Martin Kerber

Keyword(s):

Metal Oxide ◽

Energy Distribution ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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