Continuous wave vertical cavity surface emitting lasers at 2.5 μm with InP-based type-II quantum wells

2015 ◽  
Vol 106 (15) ◽  
pp. 151102 ◽  
Author(s):  
S. Sprengel ◽  
A. Andrejew ◽  
F. Federer ◽  
G. K. Veerabathran ◽  
G. Boehm ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Continuous Wave ◽  
Cavity Surface ◽  
Type Ii ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Type Ii Quantum Wells ◽  
Emitting Lasers ◽  
Vertical Cavity

InP-Based Vertical-Cavity Surface-Emitting Lasers With Type-II Quantum Wells

2015 ◽  
Vol 21 (6) ◽  
pp. 453-461 ◽  
Author(s):  
Stephan Sprengel ◽  
Ganpath Kumar Veerabathran ◽  
Florian Federer ◽  
Alexander Andrejew ◽  
Markus-Christian Amann
Keyword(s):  
Quantum Wells ◽  
Cavity Surface ◽  
Type Ii ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Type Ii Quantum Wells ◽  
Emitting Lasers ◽  
Vertical Cavity

MID-IR Vertical Cavity Surface-Emitting Lasers

1997 ◽  
Vol 484 ◽  
Author(s):  
I. Vurgaftman ◽  
W. W. Bewley ◽  
C. L. Felix ◽  
E. H. Aifer ◽  
J. R. Meyer ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Cavity Surface ◽  
Type Ii ◽  
Optically Pumped ◽  
Pulsed Mode ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Surface Emitting Laser ◽  
Emitting Lasers ◽  
Vertical Cavity

AbstractAn optically pumped mid-infrared vertical-cavity surface-emitting laser based on an active region with a “W” configuration of type-II antimonide quantum wells is reported. The emission wavelength of 2.9 ym has a weak temperature variation (dλ/dT ≈ 0.07 – 0.09 nm/K), and the multimode linewidth is quite narrow (2.5–4 nm). Lasing is observed up to T = 280 K in pulsed mode and up to 160 K cw. Under cw excitation at T = 78 K, the threshold pump power is as low as 4 mW for a 6 am spot, and the differential power conversion efficiency is 4.5%.

scholarly journals GaN-based Vertical-Cavity Surface-Emitting Lasers Incorporating Dielectric Distributed Bragg Reflectors

2019 ◽  
Vol 9 (4) ◽  
pp. 733 ◽  
Author(s):  
Tatsushi Hamaguchi ◽  
Hiroshi Nakajima ◽  
Noriyuki Fuutagawa
Keyword(s):  
Continuous Wave ◽  
Epitaxial Lateral Overgrowth ◽  
Cavity Surface ◽  
Bragg Reflectors ◽  
Distributed Bragg Reflectors ◽  
Practical Applications ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

This paper reviews past research and the current state-of-the-art concerning gallium nitride-based vertical-cavity surface-emitting lasers (GaN-VCSELs) incorporating distributed Bragg reflectors (DBRs). This paper reviews structures developed during the early stages of research into these devices, covering both major categories of GaN-based VCSELs: hybrid-DBR and all-dielectric-DBR. Although both types exhibited satisfactory performance during continuous-wave (CW) operation in conjunction with current injection as early as 2008, GaN-VCSELs have not yet been mass produced for several reasons. These include the difficulty in controlling the thicknesses of nitride semiconductor layers in hybrid-DBR type devices and issues related to the cavity dimensions in all-dielectric-DBR units. Two novel all-dielectric GaN-based VCSEL concepts based on different structures are examined herein. In one, the device incorporates dielectric DBRs at both ends of the cavity, with one DBR embedded in n-type GaN grown using the epitaxial lateral overgrowth technique. The other concept incorporates a curved mirror fabricated on (000-1) GaN. Both designs are intended to mitigate challenges regarding industrial-scale processing that are related to the difficulty in controlling the cavity length, which have thus far prevented practical applications of all-dielectric GaN-based VCSELs.

780 nm oxidised vertical-cavity surface-emitting lasers with Al0.11Ga0.89As quantum wells

1996 ◽  
Vol 32 (14) ◽  
pp. 1287 ◽  
Author(s):  
H.-E. Shin ◽  
Y.-G. Ju ◽  
J.-H. Shin ◽  
J.-H. Ser ◽  
T. Kim ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity
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