scholarly journals CW/Pulsed H− ion beam generation with PKU Cs-free 2.45 GHz microwave driven ion source

Author(s):  
S. X. Peng ◽  
H. T. Ren ◽  
Y. Xu ◽  
T. Zhang ◽  
A. L. Zhang ◽  
...  
Keyword(s):  
Ion Beam ◽  
2006 ◽  
Vol 77 (3) ◽  
pp. 03B515 ◽  
Author(s):  
V. Kanarov ◽  
A. Hayes ◽  
R. Yevtukhov ◽  
I. Kameyama ◽  
D. Siegfried ◽  
...  

2019 ◽  
Vol 65 (3) ◽  
pp. 278
Author(s):  
C. A. Valerio Lizarraga ◽  
C. Duarte-Galvan ◽  
I. Leon-Monzon ◽  
P. Villaseñor ◽  
And J. Aspiazu

To improve the beam brightness produced by a Source of Negative Ions by Cesium Sputtering we studied the beam generation in the 12~MeV Vandergraff linear accelerator at Instituto Nacional de Investigaciones Nucleares. Results of 3D particle tracking simulations of the ion source and beamline have been compared with measurements, with better agreement than traditional codes that only take into account the negative beam, and they determine a suppression in the Cs$^{+}$ production due to space charge, which in turn explains the intensity limits for negative beam production in both ionizers, and the best way to overpass them. Also, the beam dynamics variation due to the erosion of the target inside the cathode has been determined, helping to prevent beam losses and enhance the beam brightness.


2021 ◽  
Vol 63 (10) ◽  
pp. 1783-1787
Author(s):  
V. P. Frolova ◽  
A. G. Nikolaev ◽  
G. Yu. Yushkov ◽  
P. P. Kiziridi ◽  
N. A. Prokopenko

Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.


Author(s):  
Valery Ray ◽  
Josef V. Oboňa ◽  
Sharang Sharang ◽  
Lolita Rotkina ◽  
Eddie Chang ◽  
...  

Abstract Despite commercial availability of a number of gas-enhanced chemical etches for faster removal of the material, there is still lack of understanding about how to take into account ion implantation and the structural damage by the primary ion beam during focused ion beam gas-assisted etching (FIB GAE). This paper describes the attempt to apply simplified beam reconstruction technique to characterize FIB GAE within single beam width and to evaluate the parameters critical for editing features with the dimensions close to the effective ion beam diameter. The approach is based on reverse-simulation methodology of ion beam current profile reconstruction. Enhancement of silicon dioxide etching with xenon difluoride precursor in xenon FIB with inductively coupled plasma ion source appears to be high and relatively uniform over the cross-section of the xenon beam, making xenon FIB potentially suitable platform for selective removal of materials in circuit edit application.


2020 ◽  
Vol 91 (11) ◽  
pp. 113302
Author(s):  
H. Kaminaga ◽  
T. Takimoto ◽  
A. Tonegawa ◽  
K. N. Sato

1984 ◽  
Vol 27 (8) ◽  
pp. 745-751
Author(s):  
N. I. Danilovich
Keyword(s):  
Ion Beam ◽  

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