scholarly journals Gate controlled electronic transport in monolayer MoS2 field effect transistor

2015 ◽  
Vol 117 (10) ◽  
pp. 104307 ◽  
Author(s):  
Y. F. Zhou ◽  
H. M. Xian ◽  
B. Wang ◽  
Y. J. Yu ◽  
Y. D. Wei ◽  
...  
Keyword(s):  
Electronic Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Monolayer Mos2 ◽  
Effect Transistor

Salt-assisted growth of monolayer MoS2 for high-performance hysteresis-free field-effect transistor

2021 ◽  
Vol 129 (14) ◽  
pp. 145106
Author(s):  
Sameer Kumar Mallik ◽  
Sandhyarani Sahoo ◽  
Mousam Charan Sahu ◽  
Sanjeev K. Gupta ◽  
Saroj Prasad Dash ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Free Field ◽  
Monolayer Mos2 ◽  
Effect Transistor

scholarly journals High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

2019 ◽  
Vol 115 (1) ◽  
pp. 012104 ◽  
Author(s):  
Dongjea Seo ◽  
Dong Yun Lee ◽  
Junyoung Kwon ◽  
Jea Jung Lee ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
High Performance ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Monolayer Mos2 ◽  
Nitrogen Doped ◽  
Nitrogen Doped Graphene ◽  
Doped Graphene ◽  
Effect Transistor

Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers

2013 ◽  
Vol 103 (6) ◽  
pp. 063109 ◽  
Author(s):  
Jiadan Lin ◽  
Jianqiang Zhong ◽  
Shu Zhong ◽  
Hai Li ◽  
Hua Zhang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electronic Transport Properties ◽  
Effect Transistor

Ultrasensitive Monolayer MoS2 Field-Effect Transistor Based DNA Sensors for Screening of Down Syndrome

Nano Letters ◽  
2019 ◽  
Vol 19 (3) ◽  
pp. 1437-1444 ◽  
Author(s):  
Jingxia Liu ◽  
Xihua Chen ◽  
Qinqin Wang ◽  
Mengmeng Xiao ◽  
Donglai Zhong ◽  
...  
Keyword(s):  
Down Syndrome ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Dna Sensors ◽  
Monolayer Mos2 ◽  
Effect Transistor

Electronic transport in a graphene single layer: application in amino acid sensing

2019 ◽  
Vol 21 (2) ◽  
pp. 597-606 ◽  
Author(s):  
Sindy J. Rodríguez ◽  
Eduardo A. Albanesi
Keyword(s):  
Amino Acids ◽  
Amino Acid ◽  
Electronic Transport ◽  
Potential Application ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Layer ◽  
Effect Transistor ◽  
Protein Sequencer ◽  
Amino Acid Sensing

We modeled a type of field-effect transistor device based on graphene for the recognition of amino acids with a potential application in the building of a protein sequencer.

Gas adsorbates are Coulomb scatterers, rather than neutral ones, in a monolayer MoS2 field effect transistor

Nanoscale ◽  
2018 ◽  
Vol 10 (23) ◽  
pp. 10856-10862 ◽  
Author(s):  
Hyunjin Ji ◽  
Hojoon Yi ◽  
Jinbong Seok ◽  
Hyun Kim ◽  
Young Hee Lee ◽  
...  
Keyword(s):  
Transport Properties ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Monolayer Mos2 ◽  
Effect Transistor

The influence of the adsorbates from the atmosphere on the transport properties of a CVD-grown monolayer MoS2 FET is studied.

Monolayer MoS2 photodetectors with a buried-gate field-effect transistor structure

2021 ◽  
Author(s):  
Yuning Li ◽  
Shasha Li ◽  
Jingye Sun ◽  
Ke Li ◽  
Zewen Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Monolayer Mos2 ◽  
Transistor Structure ◽  
Effect Transistor

scholarly journals Probing the Field-Effect Transistor with Monolayer MoS2 Prepared by APCVD

Nanomaterials ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 1209 ◽  
Author(s):  
Han ◽  
Liu ◽  
Wang ◽  
Chen ◽  
Xie ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Chemical Vapor ◽  
Metal Electrode ◽  
Electrical Performance ◽  
Monolayer Mos2 ◽  
Back Gate ◽  
Pressure Chemical ◽  
Effect Transistor

The two-dimensional materials can be used as the channel material of transistor, which can further decrease the size of transistor. In this paper, the molybdenum disulfide (MoS2) is grown on the SiO2/Si substrate by atmospheric pressure chemical vapor deposition (APCVD), and the MoS2 is systematically characterized by the high-resolution optical microscopy, Raman spectroscopy, photoluminescence spectroscopy, and the field emission scanning electron microscopy, which can confirm that the MoS2 is a monolayer. Then, the monolayer MoS2 is selected as the channel material to complete the fabrication process of the back-gate field effect transistor (FET). Finally, the electrical characteristics of the monolayer MoS2-based FET are tested to obtain the electrical performance. The switching ratio is 103, the field effect mobility is about 0.86 cm2/Vs, the saturation current is 2.75 × 10−7 A/μm, and the lowest gate leakage current is 10−12 A. Besides, the monolayer MoS2 can form the ohmic contact with the Ti/Au metal electrode. Therefore, the electrical performances of monolayer MoS2-based FET are relatively poor, which requires the further optimization of the monolayer MoS2 growth process. Meanwhile, it can provide the guidance for the application of monolayer MoS2-based FETs in the future low-power optoelectronic integrated circuits.

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