The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

Patrick Vogt; Oliver Bierwagen

doi:10.1063/1.4913447

The competing oxide and sub-oxide formation in metal-oxide molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.4913447 ◽

2015 ◽

Vol 106 (8) ◽

pp. 081910 ◽

Cited By ~ 46

Author(s):

Patrick Vogt ◽

Oliver Bierwagen

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Molecular Beam ◽

Oxide Formation

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Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of β-(Al x Ga1− x )2O3/β-Ga2O3 heterostructures

Applied Physics Express ◽

10.7567/apex.11.115503 ◽

2018 ◽

Vol 11 (11) ◽

pp. 115503 ◽

Cited By ~ 24

Author(s):

Patrick Vogt ◽

Akhil Mauze ◽

Feng Wu ◽

Bastien Bonef ◽

James S. Speck

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Molecular Beam

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Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated By Low-Temperature Molecular-Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.2117 ◽

2007 ◽

Vol 46 (4B) ◽

pp. 2117-2121 ◽

Cited By ~ 7

Author(s):

Takashi Uehara ◽

Hiroshi Matsubara ◽

Ryosho Nakane ◽

Satoshi Sugahara ◽

Shin-ichi Takagi

Keyword(s):

Molecular Beam Epitaxy ◽

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Metal Source

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GaAs metal-oxide-semiconductor push with molecular beam epitaxy Y2O3 – In comparison with atomic layer deposited Al2O3

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2016.11.118 ◽

2017 ◽

Vol 477 ◽

pp. 179-182 ◽

Cited By ~ 3

Author(s):

H.W. Wan ◽

K.Y. Lin ◽

C.K. Cheng ◽

Y.K. Su ◽

W.C. Lee ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Molecular Beam ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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5180. Volatile metal oxide incorporation in layers of GaAs and Ga1-xAlxAs grown by molecular beam epitaxy

Vacuum ◽

10.1016/0042-207x(82)94213-0 ◽

1982 ◽

Vol 32 (7) ◽

pp. 454

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Molecular Beam

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Self-aligned inversion-channel In0.2Ga0.8As metal-oxide-semiconductor field-effect transistor with molecular beam epitaxy Al2O3/Ga2O3(Gd2O3) as the gate dielectric

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3565057 ◽

2011 ◽

Vol 29 (3) ◽

pp. 03C122 ◽

Cited By ~ 4

Author(s):

W. H. Chang ◽

T. H. Chiang ◽

Y. D. Wu ◽

M. Hong ◽

C. A. Lin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel ◽

Effect Transistor

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Volatile metal‐oxide incorporation in layers of GaAs, Ga1−xAlxAs and related compounds grown by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.92384 ◽

1981 ◽

Vol 38 (6) ◽

pp. 427-429 ◽

Cited By ~ 37

Author(s):

P. D. Kirchner ◽

J. M. Woodall ◽

J. L. Freeouf ◽

G. D. Pettit

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Molecular Beam ◽

Related Compounds

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dc and rf characteristics of self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors using molecular beam epitaxy-Al2O3/Ga2O3(Gd2O3) as gate dielectrics

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3276442 ◽

2010 ◽

Vol 28 (3) ◽

pp. C3H14-C3H17 ◽

Cited By ~ 3

Author(s):

T. D. Lin ◽

P. Chang ◽

H. C. Chiu ◽

M. Hong ◽

J. Kwo ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Inversion Channel

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Ga[sub 2]O[sub 3] grown on GaAs by molecular beam epitaxy for metal oxide semiconductor field effect transistors

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2778690 ◽

2007 ◽

Vol 25 (5) ◽

pp. 1706 ◽

Cited By ~ 8

Author(s):

M. Holland ◽

C. R. Stanley ◽

W. Reid ◽

R. J. W. Hill ◽

D. A. J. Moran ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Vertical Si-Metal-Oxide-Semiconductor Field Effect Transistors with Channel Lengths of 50 nm by Molecular Beam Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.2423 ◽

1994 ◽

Vol 33 (Part 1, No. 4B) ◽

pp. 2423-2428 ◽

Cited By ~ 36

Author(s):

Harald Gossner ◽

Ignaz Eisele ◽

Lothar Risch

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Channel Lengths

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Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy

APL Materials ◽

10.1063/1.5135930 ◽

2020 ◽

Vol 8 (2) ◽

pp. 021104 ◽

Cited By ~ 8

Author(s):

Akhil Mauze ◽

Yuewei Zhang ◽

Takeki Itoh ◽

Feng Wu ◽

James S. Speck

Keyword(s):

Molecular Beam Epitaxy ◽

Metal Oxide ◽

Molecular Beam

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