scholarly journals Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

2015 ◽  
Vol 106 (4) ◽  
pp. 041607 ◽  
Author(s):  
Yimao Wan ◽  
Keith R. McIntosh ◽  
Andrew F. Thomson ◽  
Andres Cuevas
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Plasma Exposure ◽  
Film Properties ◽  
Ammonia Plasma

Charge trapping effects in amorphous silicon/silicon nitride thin film transistors

1987 ◽  
Vol 97-98 ◽  
pp. 903-906 ◽  
Author(s):  
A.R. Hepburn ◽  
C. Main ◽  
J.M. Marshall ◽  
C. van Berkel ◽  
M.J. Powell
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Charge Trapping ◽  
Silicon Silicon ◽  
Trapping Effects

The Plasma Deposition of Semiconductor Multilater Structures

1989 ◽  
Vol 165 ◽  
Author(s):  
Masataka Hirose ◽  
Seiichi Miyazaki
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Plasma Deposition ◽  
Substrate Surface ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atomic Scale ◽  
Layer By Layer ◽  
X Ray

AbstractThe early stages of thin film deposition from the rf glow discharge of SiH4 or SiH4 + NH3 have been studied by analysing the structure of silicon based multiiayers consisting of hydrogenated amorphous silicon (a-Si:H, 10 – 200 A thick) and stoichiometric silicon nitride (a-Si3N4:H, 25 – 250 A) alternating layers. The x-ray diffraction, its rocking curve and x-ray interference of the multilayers have shown that the amorphous silicon/silicon nitride interface is atomically abrupt and the surfaces of the respective layers are atomically flat regardless of substrate materials. This indicates that the precursors impinging onto a substrate from the gas phase homogeneously cover the growing surface and the layer by layer growth proceeds on atomic scale. In the plasma deposition of the covalently bonded semiconductors and insulators, the island formation on a substrate surface at the beginning of the thin film growth is very unlikely.

Amorphous silicon‐silicon nitride thin‐film transistors

1981 ◽  
Vol 38 (10) ◽  
pp. 794-796 ◽  
Author(s):  
M. J. Powell ◽  
B. C. Easton ◽  
O. F. Hill
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Silicon Silicon
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