Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

2015 ◽  
Vol 117 (4) ◽  
pp. 045712 ◽  
Author(s):  
Omar Elleuch ◽  
Li Wang ◽  
Kan-Hua Lee ◽  
Koshiro Demizu ◽  
Kazuma Ikeda ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
High Concentration ◽  
P Type

Relationship between a nitrogen-related hole trap and ionized acceptors density in p-type GaAsN grown by chemical beam epitaxy

2010 ◽  
Vol 8 (2) ◽  
pp. 616-618 ◽  
Author(s):  
Boussairi Bouzazi ◽  
Hidetoshi Suzuki ◽  
Nobuaki Kojima ◽  
Yoshio Ohshita ◽  
Masafumi Yamaguchi
Keyword(s):  
Chemical Beam Epitaxy ◽  
Hole Trap ◽  
P Type

Carbon Incorporation in Gaas grown by UHVCVD Using Trimethylgallium and Arsine

1992 ◽  
Vol 281 ◽  
Author(s):  
Seong-Ju Park ◽  
Jeong-Rae Ro ◽  
Jae-Ki Sim ◽  
El-Hang Lee
Keyword(s):  
Growth Rates ◽  
Hole Concentration ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Chemical Beam Epitaxy ◽  
Hydrogen Atoms ◽  
Carbon Incorporation ◽  
Significant Drop ◽  
P Type

ABSTRACTWe present results of a study on the effect of unprecracked arsine(AsH3) and trimethylgallium(TMGa) on carbon incorporation in UHVCVD(Ultra High Vacuum Chemical Vapor Deposition) grown GaAs epilayers on GaAs(100). Three distinct temperature-dependent regions of growth rates were identified as growth temperature was increased from 570 to 690°C. The growth rates were also strongly dependent on V/III ratio in a range of 5 to 30, which clearly indicates that the growth rate is determined by the amount of arsenic adsorbed on the surface at low V/III ratio and adsorption of TMGa or decomposition process at high V/III ratio. Hall concentration measurements and low temperature photoluminescence data show that the films are all p-type and their impurity concentrations are reduced by two orders of magnitude compared to those of epilayers grown by CBE(Chemical Beam Epitaxy) which employs TMGa and arsenic(precracked arsines) as source materials. Our results indicate that the hydrogen atoms dissociated from adsorbed arsine may remove hydrocarbon species resulting in a significant drop in hole concentration.

A recombination center in p-type GaAsN grown by chemical beam epitaxy

2011 ◽  
Vol 95 (1) ◽  
pp. 281-283 ◽  
Author(s):  
Boussairi Bouzazi ◽  
Hidetoshi Suzuki ◽  
Nobuaki Kojima ◽  
Yoshio Ohshita ◽  
Masafumi Yamaguchi
Keyword(s):  
Recombination Center ◽  
Chemical Beam Epitaxy ◽  
P Type

scholarly journals Влияние радиационных дефектов, созданных низкоэнергетическими протонами при температуре 83 K, на характеристики кремниевых фотоэлектрических структур

2020 ◽  
Vol 54 (2) ◽  
pp. 144
Author(s):  
Н.М. Богатов ◽  
Л.Р. Григорьян ◽  
А.И. Коваленко ◽  
М.С. Коваленко ◽  
Ф.А. Колоколов ◽  
...  
Keyword(s):  
Space Charge ◽  
Space Charge Region ◽  
Surface Region ◽  
Initial Energy ◽  
Low Energy ◽  
Radiation Defects ◽  
High Concentration ◽  
Transmission Coefficients ◽  
Current Voltage ◽  
P Type

Irradiation with low-energy protons leads to a change in the electrophysical, optical, and other properties of the surface region of semiconductor structures, which creates additional possibilities for modifying semiconductor devices. The work is devoted to the study of the effect of radiation defects created by low-energy protons at a sample temperature of 83 K on the properties of two-sided silicon photovoltaic structures with a diffusion n^+-p junction. Samples of n^+-p-p^+ type were irradiated with a flux of protons with an energy of 40 keV or 180 keV and a dose of 1015 cm^-2. To explain the observed regularities in the variation of the parameters of the current-voltage characteristics and the transmission coefficients, the distribution of the average number of interstitial silicon, vacancies, divacancies, and disordering regions created under these conditions on the unit projective path length by one proton in the diffusion layer and the space charge region of the n^+-p junction was calculated. It is shown that protons with an initial energy of 40 keV predominantly change the physical properties of a layer with a high concentration of donors, and protons with an initial energy of 180 keV are properties of the space-charge region in a layer containing acceptors. The number of radiation defects in the maximum spatial distribution in the n-region is much smaller than in the p-region.

scholarly journals High Power Normally-OFF GaN/AlGaN HEMT with Regrown p Type GaN

Energies ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 6098
Author(s):  
Gwen Rolland ◽  
Christophe Rodriguez ◽  
Guillaume Gommé ◽  
Abderrahim Boucherif ◽  
Ahmed Chakroun ◽  
...  
Keyword(s):  
High Electron Mobility Transistor ◽  
Device Performance ◽  
High Electron ◽  
Chemical Beam Epitaxy ◽  
High Electron Mobility ◽  
Device Failure ◽  
Gan Hemt ◽  
Silvaco Atlas ◽  
P Type ◽  
The Impact

In this paper is presented a Normally-OFF GaN HEMT (High Electron Mobility Transistor) device using p-doped GaN barrier layer regrown by CBE (Chemical Beam Epitaxy). The impact of the p doping on the device performance is investigated using TCAD simulator (Silvaco/Atlas). With 4E17 cm−3 p doping, a Vth of 1.5 V is achieved. Four terminal breakdowns of the fabricated device are investigated, and the origin of the device failure is identified.

scholarly journals Volcanology and inflation structures of an extensive basaltic lava flow in the Payenia Volcanic Province, extra-Andean back arc of Argentina

2019 ◽  
Vol 46 (2) ◽  
pp. 279 ◽  
Author(s):  
Mauro Ignacio Bernardi ◽  
Gustavo Walter Bertotto ◽  
Alexis Daniel Ponce ◽  
Yuji Orihashi ◽  
Hirochika Sumino
Keyword(s):  
Lava Flow ◽  
Liquid Core ◽  
Internal Flow ◽  
Middle Pleistocene ◽  
High Concentration ◽  
Volcanic Province ◽  
Low Viscosity ◽  
Effusion Rates ◽  
Flow Pathways ◽  
P Type

The El Puesto lava flow is located in the Payenia Volcanic Province (central-western Argentina), has a length of 70 km and is Middle Pleistocene in age (0.200±0.027 Ma). The flow shows a P-type pahoehoe structure and exhibits several inflation structures, mainly tumuli and also inflation ridges and lava rises. Lava rise pits and radial or annular clefts are common features associated with inflation structures. The gentle slope on which the flow moved (≈0.5°) allowed the lateral coalescence of lobes at the flow front and the development of an external rigid crust that insulated the liquid core. Lava tunnels are frequent and the lava tunnel named “Cueva de Halada” which is located at its medium portion is the best example of a drainage master tube which formed from the cooling of the crust around a stable inflated flow. Tumuli alignments and long inflation ridges reveal the existence of larger tunnels within the flow. Inflation structures may occur in high concentration belts that converge on a single main belt which is assigned to an anastomosed network of internal flow pathways within the main lava body. The development of inflation structures and lava tunnels require low to moderate effusion rates. An average lava supply rate of 1.8x10-4 m3/s and an inflation time of about 15 days were estimated for an average tumulus of this flow. A high and sustained supply of low viscosity lava (η’=1550 - 483 Pa s) was inferred that initially generated a sheet flow of great areal extension. The reduction in effusion rates could then allowed the development of tunnels that carried lava to the distal fronts, generating localized inflation phenomena throughout the lava flow.

Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy

2010 ◽  
Vol 49 (12) ◽  
pp. 121001 ◽  
Author(s):  
Boussairi Bouzazi ◽  
Hidetoshi Suzuki ◽  
Nobuaki Kojima ◽  
Yoshio Ohshita ◽  
Masafumi Yamaguchi
Keyword(s):  
Chemical Beam Epitaxy ◽  
Hole Trap ◽  
P Type

Analysis of the main acceptor defect in p-type GaAsN grown by chemical beam epitaxy

2014 ◽  
Vol 53 (9) ◽  
pp. 091201 ◽  
Author(s):  
Omar Elleuch ◽  
Boussairi Bouzazi ◽  
Hiroyuki Kowaki ◽  
Kazuma Ikeda ◽  
Nobuaki Kojima ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
Acceptor Defect ◽  
P Type

Hole Trap Associated with High Background Doping in P-type GaAsN Grown by Chemical Beam Epitaxy

2014 ◽  
Author(s):  
O. Elleuch ◽  
L. Wang ◽  
K. Demizu ◽  
K. Ikeda ◽  
N. Kojima ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
Hole Trap ◽  
High Background ◽  
Background Doping ◽  
P Type

scholarly journals Etched p-Type Si Nanowires for Efficient Ozone Decomposition

2019 ◽  
Vol 14 (1) ◽  
Author(s):  
Xuan Li ◽  
Linqu Luo ◽  
Yicheng Bi ◽  
Anqi Wang ◽  
Yunfa Chen ◽  
...  
Keyword(s):  
Silicon Nanowires ◽  
High Efficiency ◽  
Catalytic Decomposition ◽  
Ozone Decomposition ◽  
Si Nanowires ◽  
High Concentration ◽  
Wet Chemical ◽  
P Type ◽  
Decomposition Efficiency ◽  
Better Than

AbstractHigh concentration ozone can damage greatly to the respiratory, cardiovascular systems, and fertility of people, and catalytic decomposition is an important strategy to reduce its harm. However, it remains a challenge to develop efficient ozone decomposition catalysts with high efficiency. In this study, p- and n-type silicon nanowires (Si NWs) are fabricated by wet chemical etching method and are firstly applied to catalytic decompose ozone at room temperature. The p-type Si NWs exhibit 90% ozone (20 ppm O3/air) decomposition efficiency with great stability, which is much better than that of n-type Si NWs (50%) with same crystal orientation, similar diameter and specific surface area. The catalytic property difference is mainly attributed to the more delocalization holes in the p-type Si NWs, which can accelerate the desorption of ozone decomposition intermediates (i.e., adsorbed oxygen species).

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