Carrier mobility of highly transparent conductive Al-doped ZnO polycrystalline films deposited by radio-frequency, direct-current, and radio-frequency-superimposed direct-current magnetron sputtering: Grain boundary effect and scattering in the grain bulk

2015 ◽  
Vol 117 (4) ◽  
pp. 045304 ◽  
Author(s):  
Junichi Nomoto ◽  
Hisao Makino ◽  
Tetsuya Yamamoto
Keyword(s):  
Grain Boundary ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Direct Current ◽  
Carrier Mobility ◽  
Boundary Effect ◽  
Direct Current Magnetron Sputtering ◽  
Doped Zno ◽  
Grain Bulk ◽  
Grain Boundary Effect

Tungsten-doped ZnO transparent conducting films deposited by direct current magnetron sputtering

Vacuum ◽  
2010 ◽  
Vol 85 (2) ◽  
pp. 184-186 ◽  
Author(s):  
Huafu Zhang ◽  
Hanfa Liu ◽  
Chengxin Lei ◽  
Changkun Yuan ◽  
Aiping Zhou
Keyword(s):  
Magnetron Sputtering ◽  
Direct Current ◽  
Transparent Conducting Films ◽  
Transparent Conducting ◽  
Direct Current Magnetron Sputtering ◽  
Doped Zno

Preparation of Molybdenum-doped Indium Oxide Thin Films Using Reactive Direct-current Magnetron Sputtering

2005 ◽  
Vol 20 (6) ◽  
pp. 1404-1408 ◽  
Author(s):  
Xifeng Li ◽  
Weina Miao ◽  
Qun Zhang ◽  
Li Huang ◽  
Zhuangjian Zhang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Direct Current ◽  
Glass Substrate ◽  
Carrier Mobility ◽  
High Mobility ◽  
X Ray Diffraction ◽  
Direct Current Magnetron Sputtering ◽  
Thick Glass

High-mobility molybdenum-doped In2O3 films (IMO) were prepared on the normal glass substrate by reactive direct current magnetron sputtering from the molybdenum-embedded indium metal target. The effects of oxygen partial pressure, substrate temperature, and sputtering current on the optoelectrical properties of IMO films were investigated. The films with the highest carrier mobility of 50 cm2 V−1 s−1, as well as the average visible transmission greater than 80% including the 1.2-mm-thick glass substrate, were obtained. The minimum resistivity of the films is 3.7 × 10−4 ohm cm. The properties of the IMO films are sensitive to the oxygen partial pressure in the sputtering environment. X-ray diffraction measurements indicate that the films show In2O3 crystal structure.

scholarly journals The Textural Effect of Cu Doping and the Electronic Effect of Ti, Zr and Ge Dopings Upon the Physical Properties of In2O3and Sn-Doped In2O3Ceramics

1993 ◽  
Vol 15 (2) ◽  
pp. 79-87 ◽  
Author(s):  
S. J. Wen ◽  
G. Campet
Keyword(s):  
Grain Boundary ◽  
Electron Mobility ◽  
Carrier Mobility ◽  
Electronic Effect ◽  
Weak Interactions ◽  
Boundary Effect ◽  
Visible Region ◽  
Cu Doping ◽  
Ceramic Density ◽  
Grain Boundary Effect

The electronic properties of Cu-, Ti-, Zr-, and Ge-doped In2O3(IO) and ITO (Sn-doped In2O3) ceramics are investigated. We distinguish the different effect of Cu doping (so called the “textural effect”) and of Ti, Zr and Ge dopings (so called the “electronic effect”) of IO and ITO ceramics. Indeed, Cu doping in IO and ITO enhances the ceramic density and thereby the conductivity due to an increase in the carrier mobility (grain boundary effect); the absorbance in the visible region is then lowered. Most interestingly for Ti-, Zr-, and Ge-doped samples, the increase of conductivity associated with an enlargement of the electron-mobility along with a decrease of the absorbance in the visible, account for the weak interactions occuring between the conduction-band electrons and the ionized donor centers.

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