Raman measurements of substrate temperature in a molecular beam epitaxy growth chamber

2015 ◽  
Vol 86 (1) ◽  
pp. 014904 ◽  
Author(s):  
T. Hutchins ◽  
M. Nazari ◽  
M. Eridisoorya ◽  
T. M. Myers ◽  
M. Holtz
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Growth Chamber ◽  
Molecular Beam Epitaxy Growth

Simulations of molecular beam epitaxy growth of GaAs

2000 ◽  
Vol 648 ◽  
Author(s):  
Z. Zhang ◽  
B. G. Orr
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Numerical Simulations ◽  
Molecular Beam ◽  
High Surface ◽  
Molecular Beam Epitaxy Growth ◽  
Smooth Surfaces ◽  
Mbe Growth ◽  
Surface Mobility ◽  
Key Aspects

AbstractNumerical simulations have been performed for generic III-V MBE growth. The key aspects of the simulation include two deposited species one volatile and the second with high surface mobility. Simulations reproduce the experimentally observed adatom concentrations for GaAs and show that smooth surfaces are produced for films deposited with a substrate temperature in a crossover regime between kinetically limited and entropically roughened growth.

scholarly journals Substrate temperature changes during molecular beam epitaxy growth of GaMnAs

2007 ◽  
Vol 102 (8) ◽  
pp. 083536 ◽  
Author(s):  
V. Novák ◽  
K. Olejník ◽  
M. Cukr ◽  
L. Smrčka ◽  
Z. Remeš ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Molecular Beam Epitaxy Growth ◽  
Temperature Changes

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

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