scholarly journals Spectroscopic ellipsometry on Si/SiO2/graphene tri-layer system exposed to downstream hydrogen plasma: Effects of hydrogenation and chemical sputtering

2015 ◽  
Vol 106 (1) ◽  
pp. 011904 ◽  
Author(s):  
Baran Eren ◽  
Wangyang Fu ◽  
Laurent Marot ◽  
Michel Calame ◽  
Roland Steiner ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Hydrogen Plasma ◽  
Layer System ◽  
Chemical Sputtering ◽  
Plasma Effects

Hydrogen plasma effects on ultralow-k porous SiCOH dielectrics

2005 ◽  
Vol 98 (7) ◽  
pp. 074502 ◽  
Author(s):  
A. Grill ◽  
V. Sternhagen ◽  
D. Neumayer ◽  
V. Patel
Keyword(s):  
Hydrogen Plasma ◽  
Plasma Effects

Oxygen and hydrogen plasma effects on the MgB2 superconductivity

2011 ◽  
Vol 11 (3) ◽  
pp. 555-558
Author(s):  
J.-K. Jung ◽  
K.W. Lee ◽  
W. Lee ◽  
Cheol Eui Lee ◽  
S.J. Noh ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Plasma Effects

Etching of a-Si:H thin films by hydrogen plasma: A view from in situ spectroscopic ellipsometry

2014 ◽  
Vol 141 (8) ◽  
pp. 084708 ◽  
Author(s):  
Aomar Hadjadj ◽  
Fadila Larbi ◽  
Mickaël Gilliot ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Hydrogen Plasma

In Situ Spectroscopic Ellipsometry Study of the Oxide Etching and Surface Damaging Processes on Silicon Under Hydrogen Plasma

1999 ◽  
Vol 591 ◽  
Author(s):  
I.M. Vargas ◽  
J.Y. Manso ◽  
J.R. Guzmán ◽  
B.R. Weiner ◽  
G. Morell
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Surface Damage ◽  
Silicon Surfaces ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Si Substrates ◽  
Oxide Etching

ABSTRACTWe employed in situ ellipsometry in the monitoring of surface damage to monocrystalline silicon (Si) substrates under hydrogen plasma conditions. These measurements were complemented with spectroscopic ellipsometry and Raman spectroscopy, in order to characterize the surface conditions. It was found that heating the Si substrate to 700°C in the presence of molecular hydrogen produces etching of the native oxide layer, which is typically 10 Å thick. When the already hot and bare silicon surface is submitted to hydrogen plasma, it deteriorates very fast, becoming rough and full of voids. Modeling of the spectroscopic ellipsometry data was used to obtain a quantitative physical picture of the surface damage, in terms of roughness layer t ickness and void fraction. The results indicate that by the time a thin film starts to grow on these silicon surfaces, like in the chemical vapor deposition of diamond, the roughness produced by the hydrogen plasma has already determined to a large extent the rough nature of the film to be grown.

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