Etching of a-Si:H thin films by hydrogen plasma: A view from in situ spectroscopic ellipsometry

2014 ◽  
Vol 141 (8) ◽  
pp. 084708 ◽  
Author(s):  
Aomar Hadjadj ◽  
Fadila Larbi ◽  
Mickaël Gilliot ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Hydrogen Plasma

scholarly journals Dealing with inaccuracies in the analysis on solvent-induced swelling of transparent thin films using in situ spectroscopic ellipsometry in the visible wavelength range

2016 ◽  
Vol 49 (6) ◽  
pp. 538-547 ◽  
Author(s):  
Kristianne Tempelman ◽  
Emiel J. Kappert ◽  
Michiel J.T. Raaijmakers ◽  
Herbert Wormeester ◽  
Nieck E. Benes
Keyword(s):  
Thin Films ◽  
Wavelength Range ◽  
Spectroscopic Ellipsometry ◽  
Visible Wavelength ◽  
Visible Wavelength Range

In situ spectroscopic ellipsometry study of the hydrogenation process of switchable mirrors based on magnesium-nickel alloy thin films

2010 ◽  
Vol 107 (4) ◽  
pp. 043517 ◽  
Author(s):  
Y. Yamada ◽  
S. Bao ◽  
K. Tajima ◽  
M. Okada ◽  
M. Tazawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Alloy ◽  
Spectroscopic Ellipsometry ◽  
Hydrogenation Process

In-operando spectroscopic ellipsometry studies of IrO2 dynamic instabilities: Guide to in-situ growth of pyrochlore iridate thin films

2019 ◽  
Vol 19 (4) ◽  
pp. 400-405 ◽  
Author(s):  
Woo Jin Kim ◽  
Eun Kyo Ko ◽  
So Yeun Kim ◽  
Bongju Kim ◽  
Tae Won Noh
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
In Situ Growth ◽  
In Operando

In Situ Spectroscopic Ellipsometry Study of the Oxide Etching and Surface Damaging Processes on Silicon Under Hydrogen Plasma

1999 ◽  
Vol 591 ◽  
Author(s):  
I.M. Vargas ◽  
J.Y. Manso ◽  
J.R. Guzmán ◽  
B.R. Weiner ◽  
G. Morell
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Surface Damage ◽  
Silicon Surfaces ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Si Substrates ◽  
Oxide Etching

ABSTRACTWe employed in situ ellipsometry in the monitoring of surface damage to monocrystalline silicon (Si) substrates under hydrogen plasma conditions. These measurements were complemented with spectroscopic ellipsometry and Raman spectroscopy, in order to characterize the surface conditions. It was found that heating the Si substrate to 700°C in the presence of molecular hydrogen produces etching of the native oxide layer, which is typically 10 Å thick. When the already hot and bare silicon surface is submitted to hydrogen plasma, it deteriorates very fast, becoming rough and full of voids. Modeling of the spectroscopic ellipsometry data was used to obtain a quantitative physical picture of the surface damage, in terms of roughness layer t ickness and void fraction. The results indicate that by the time a thin film starts to grow on these silicon surfaces, like in the chemical vapor deposition of diamond, the roughness produced by the hydrogen plasma has already determined to a large extent the rough nature of the film to be grown.

Atomic layer-by-layer MOCVD of high-k dielectric thin films with in-situ monitoring by spectroscopic ellipsometry

2002 ◽  
Author(s):  
Yoshishige Tsuchiya ◽  
Masato Endoh ◽  
Masatoshi Kurosawa ◽  
Raymond T. Tung ◽  
Takeo Hattori ◽  
...  
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Atomic Layer ◽  
In Situ Monitoring ◽  
Layer By Layer ◽  
Dielectric Thin Films ◽  
High K ◽  
High K Dielectric

Top injection reactor tool with in situ spectroscopic ellipsometry for growth and characterization of ALD thin films

2008 ◽  
Vol 85 (3) ◽  
pp. 527-533 ◽  
Author(s):  
D. Schmidt ◽  
S. Strehle ◽  
M. Albert ◽  
W. Hentsch ◽  
J.W. Bartha
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry
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