scholarly journals Time-resolved photoluminescence measurements for determining voltage-dependent charge-separation efficiencies of subcells in triple-junction solar cells

2015 ◽  
Vol 106 (1) ◽  
pp. 013905 ◽  
Author(s):  
David M. Tex ◽  
Toshiyuki Ihara ◽  
Hidefumi Akiyama ◽  
Mitsuru Imaizumi ◽  
Yoshihiko Kanemitsu
Keyword(s):  
Solar Cells ◽  
Triple Junction ◽  
Charge Separation ◽  
Time Resolved ◽  
Voltage Dependent ◽  
Time Resolved Photoluminescence

Electrical characterization of Cu(In,Ga)Se 2 -solar cells by voltage dependent time-resolved photoluminescence

2015 ◽  
Vol 582 ◽  
pp. 379-382 ◽  
Author(s):  
Matthias Maiberg ◽  
Conrad Spindler ◽  
Enrico Jarzembowski ◽  
Roland Scheer
Keyword(s):  
Solar Cells ◽  
Electrical Characterization ◽  
Time Resolved ◽  
Voltage Dependent ◽  
Time Resolved Photoluminescence

Enhanced recombination next to laser-patterned lines in CIGSe solar cells revealed by spectral and time-resolved photoluminescence

2021 ◽  
Vol 536 ◽  
pp. 147721
Author(s):  
Christof Schultz ◽  
Andreas Bartelt ◽  
Cornelia Junghans ◽  
Wolfgang Becker ◽  
Rutger Schlatmann ◽  
...  
Keyword(s):  
Solar Cells ◽  
Time Resolved ◽  
Time Resolved Photoluminescence

scholarly journals Long-lived and disorder-free charge transfer states enable endothermic charge separation in efficient non-fullerene organic solar cells

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Ture F. Hinrichsen ◽  
Christopher C. S. Chan ◽  
Chao Ma ◽  
David Paleček ◽  
Alexander Gillett ◽  
...  
Keyword(s):  
Solar Cells ◽  
Charge Transfer ◽  
Organic Solar Cells ◽  
Charge Separation ◽  
Free Charge ◽  
Charge Generation ◽  
Time Resolved ◽  
Thermodynamic Conditions ◽  
Donor Acceptor ◽  
Interfacial Charge

Abstract Organic solar cells based on non-fullerene acceptors can show high charge generation yields despite near-zero donor–acceptor energy offsets to drive charge separation and overcome the mutual Coulomb attraction between electron and hole. Here, we use time-resolved optical spectroscopy to show that free charges in these systems are generated by thermally activated dissociation of interfacial charge-transfer states that occurs over hundreds of picoseconds at room temperature, three orders of magnitude slower than comparable fullerene-based systems. Upon free electron–hole encounters at later times, both charge-transfer states and emissive excitons are regenerated, thus setting up an equilibrium between excitons, charge-transfer states and free charges. Our results suggest that the formation of long-lived and disorder-free charge-transfer states in these systems enables them to operate closely to quasi-thermodynamic conditions with no requirement for energy offsets to drive interfacial charge separation and achieve suppressed non-radiative recombination.

Carrier Dynamics in MOVPE-Grown Bulk InGaAsNSb Materials and Epitaxial Lift-Off GaAs Double Heterostructures for Multi-junction Solar Cells

2014 ◽  
Vol 1635 ◽  
pp. 55-62
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Nathan Wells ◽  
Zachary Lingley ◽  
Nathan Presser ◽  
...  
Keyword(s):  
Solar Cells ◽  
Triple Junction ◽  
High Performance ◽  
Cost Effective ◽  
Carrier Dynamics ◽  
Dilute Nitride ◽  
Time Resolved ◽  
Double Heterostructures ◽  
Lift Off ◽  
Lattice Matched

ABSTRACTHigh performance and cost effective multi-junction III-V solar cells are attractive for satellite applications. High performance multi-junction solar cells are based on a triple-junction design that employs an InGaP top-junction, a GaAs middle-junction, and a bottom-junction consisting of a 1.0 – 1.25 eV-material. The most attractive 1.0 – 1.25 eV-material is the lattice-matched dilute nitride such as InGaAsN(Sb). A record efficiency of 43.5% was achieved from multi-junction solar cells including dilute nitride materials [1]. In addition, cost effective manufacturing of III-V triple-junction solar cells can be achieved by employing full-wafer epitaxial lift-off (ELO) technology, which enables multiple substrate re-usages. We employed time-resolved photoluminescence (TR-PL) techniques to study carrier dynamics in both pre- and post-ELO processed GaAs double heterostructures (DHs) as well as in MOVPE-grown bulk dilute nitride layers lattice matched to GaAs substrates.

Charge Separation Between Strain Coupled Quantum Dots in a Self-Assembled InAs Quantum Dot Structure

1999 ◽  
Vol 571 ◽  
Author(s):  
W. V. Schoenfeld ◽  
T. Lundstrom ◽  
P. M. Petroff
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Preliminary Data ◽  
Charge Separation ◽  
Electron Hole ◽  
Coupled Quantum Dots ◽  
Time Resolved ◽  
Inas Quantum Dot ◽  
Storage Times ◽  
Time Resolved Photoluminescence

ABSTRACTWe present an InAs QDs structure designed to separate and store photo-generated electron-hole pairs. Charge separation in the structure is demonstrated using power dependent photoluminescence and biased photoluminescence. Preliminary data from time resolved photoluminescence suggest storage times in the device in the μsec range.

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