Phonon scattering due to van der Waals forces in the lattice thermal conductivity of Bi2Te3 thin films

2015 ◽  
Vol 117 (1) ◽  
pp. 015103 ◽  
Author(s):  
Kyeong Hyun Park ◽  
Mohamed Mohamed ◽  
Zlatan Aksamija ◽  
Umberto Ravaioli
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Van Der Waals ◽  
Van Der Waals Forces

Electron–phonon scattering effect on the lattice thermal conductivity of silicon nanostructures

2017 ◽  
Vol 19 (42) ◽  
pp. 28517-28526 ◽  
Author(s):  
Bo Fu ◽  
Guihua Tang ◽  
Yifei Li
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Thermal Transport ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Silicon Nanostructures ◽  
Nanoscale Thermal Transport ◽  
Scattering Effect ◽  
Solid Thin Films ◽  
Electron Phonon Scattering

The effect of electron–phonon scattering on the nanoscale thermal transport is investigated systematically in nanowires, solid thin films and nanoporous thin films by considering the phonon–phonon, phonon–boundary and electron–phonon scattering simultaneously.

Lattice Thermal Conductivity Modelling of a Diatomic Nanoscale Material

2020 ◽  
Vol 10 (5) ◽  
pp. 602-609
Author(s):  
Adil H. Awad
Keyword(s):  
Thermal Conductivity ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Correction Term ◽  
Nanoscale Material ◽  
New Approach ◽  
Two Samples ◽  
Conductivity Modelling ◽  
Callaway Model

Introduction: A new approach for expressing the lattice thermal conductivity of diatomic nanoscale materials is developed. Methods: The lattice thermal conductivity of two samples of GaAs nanobeam at 4-100K is calculated on the basis of monatomic dispersion relation. Phonons are scattered by nanobeam boundaries, point defects and other phonons via normal and Umklapp processes. Methods: A comparative study of the results of the present analysis and those obtained using Callaway formula is performed. We clearly demonstrate the importance of the utilised scattering mechanisms in lattice thermal conductivity by addressing the separate role of the phonon scattering relaxation rate. The formulas derived from the correction term are also presented, and their difference from Callaway model is evident. Furthermore their percentage contribution is sufficiently small to be neglected in calculating lattice thermal conductivity. Conclusion: Our model is successfully used to correlate the predicted lattice thermal conductivity with that of the experimental observation.

scholarly journals First-principles predictions of low lattice thermal conductivity and high thermoelectric performance of AZnSb (A = Rb, Cs)

RSC Advances ◽  
2021 ◽  
Vol 11 (25) ◽  
pp. 15486-15496
Author(s):  
Enamul Haque
Keyword(s):  
Thermal Conductivity ◽  
Debye Temperature ◽  
Layered Structure ◽  
First Principles ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Thermoelectric Performance

The layered structure, and presence of heavier elements Rb/Cs and Sb induce high anharmonicity, low Debye temperature, intense phonon scattering, and hence, low lattice thermal conductivity.

Theory of Thermal Conductivity of Micro- and Nano-structured Materials

2009 ◽  
Vol 1172 ◽  
Author(s):  
Gyaneshwar P. Srivastava
Keyword(s):  
Thermal Conductivity ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Polycrystalline Diamond ◽  
Comprehensive Treatment ◽  
Si Nanowires ◽  
Quantitative Investigation ◽  
Debye Relaxation ◽  
Structured Materials ◽  
20 Nm

AbstractWe provide a brief discussion of the Boltzmann equation derived Callaway-Debye relaxation time theory of lattice thermal conductivity of micro- and nano-structured materials (of size greater than 20 nm. Incorporated in the theory is a comprehensive treatment of three-phonon scattering events. Using numerical results from this theory, we present a quantitative investigation of the magnitude and temperature variation of the conductivity of CVD polycrystalline diamond films, suspended GaAs nanostructures, Si nanowires, and AlN micro- and nano-ceramics.

scholarly journals Electrical Transport and Thermoelectric Properties of SnSe–SnTe Solid Solution

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3854 ◽  
Author(s):  
Jun-Young Cho ◽  
Muhammad Siyar ◽  
Woo Chan Jin ◽  
Euyheon Hwang ◽  
Seung-Hwan Bae ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Solid Solution ◽  
Electrical Conductivity ◽  
Single Crystal ◽  
Carrier Concentration ◽  
Electrical Transport ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Practical Applications ◽  
Defect Sites

SnSe is considered as a promising thermoelectric (TE) material since the discovery of the record figure of merit (ZT) of 2.6 at 926 K in single crystal SnSe. It is, however, difficult to use single crystal SnSe for practical applications due to the poor mechanical properties and the difficulty and cost of fabricating a single crystal. It is highly desirable to improve the properties of polycrystalline SnSe whose TE properties are still not near to that of single crystal SnSe. In this study, in order to control the TE properties of polycrystalline SnSe, polycrystalline SnSe–SnTe solid solutions were fabricated, and the effect of the solid solution on the electrical transport and TE properties was investigated. The SnSe1−xTex samples were fabricated using mechanical alloying and spark plasma sintering. X-ray diffraction (XRD) analyses revealed that the solubility limit of Te in SnSe1−xTex is somewhere between x = 0.3 and 0.5. With increasing Te content, the electrical conductivity was increased due to the increase of carrier concentration, while the lattice thermal conductivity was suppressed by the increased amount of phonon scattering. The change of carrier concentration and electrical conductivity is explained using the measured band gap energy and the calculated band structure. The change of thermal conductivity is explained using the change of lattice thermal conductivity from the increased amount of phonon scattering at the point defect sites. A ZT of ~0.78 was obtained at 823 K from SnSe0.7Te0.3, which is an ~11% improvement compared to that of SnSe.

scholarly journals Reduction of Lattice Thermal Conductivity in PbTe Induced by Artificially Generated Pores

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Jae-Yeol Hwang ◽  
Eun Sung Kim ◽  
Syed Waqar Hasan ◽  
Soon-Mok Choi ◽  
Kyu Hyoung Lee ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Pore Structure ◽  
Transport Properties ◽  
Thermoelectric Materials ◽  
Thermal Transport ◽  
Lattice Thermal Conductivity ◽  
Phonon Scattering ◽  
Phonon Modes ◽  
Thermal Transport Properties

Highly dense pore structure was generated by simple sequential routes using NaCl and PVA as porogens in conventional PbTe thermoelectric materials, and the effect of pores on thermal transport properties was investigated. Compared with the pristine PbTe, the lattice thermal conductivity values of pore-generated PbTe polycrystalline bulks were significantly reduced due to the enhanced phonon scattering by mismatched phonon modes in the presence of pores (200 nm–2 μm) in the PbTe matrix. We obtained extremely low lattice thermal conductivity (~0.56 W m−1 K−1at 773 K) in pore-embedded PbTe bulk after sonication for the elimination of NaCl residue.

Monte Carlo Study of Phonon Heat Conduction in Silicon Thin Films Including Contributions of Optical Phonons

2010 ◽  
Vol 132 (5) ◽  
Author(s):  
Arpit Mittal ◽  
Sandip Mazumder
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Monte Carlo ◽  
Heat Conduction ◽  
Phonon Scattering ◽  
Computational Domain ◽  
Optical Phonons ◽  
Phonon Modes ◽  
Silicon Thin Film ◽  
Silicon Thin Films

Abstract The Monte Carlo method has found prolific use in the solution of the Boltzmann transport equation for phonons for the prediction of nonequilibrium heat conduction in crystalline thin films. This paper contributes to the state-of-the-art by performing a systematic study of the role of the various phonon modes on thermal conductivity predictions, in particular, optical phonons. A procedure to calculate three-phonon scattering time-scales with the inclusion of optical phonons is described and implemented. The roles of various phonon modes are assessed. It is found that transverse acoustic (TA) phonons are the primary carriers of energy at low temperatures. At high temperatures (T>200 K), longitudinal acoustic (LA) phonons carry more energy than TA phonons. When optical phonons are included, there is a significant change in the amount of energy carried by various phonons modes, especially at room temperature, where optical modes are found to carry about 25% of the energy at steady state in silicon thin films. Most importantly, it is found that inclusion of optical phonons results in better match with experimental observations for silicon thin-film thermal conductivity. The inclusion of optical phonons is found to decrease the thermal conductivity at intermediate temperatures (50–200 K) and to increase it at high temperature (>200 K), especially when the film is thin. The effect of number of stochastic samples, the dimensionality of the computational domain (two-dimensional versus three-dimensional), and the lateral (in-plane) dimension of the film on the statistical accuracy and computational efficiency is systematically studied and elucidated for all temperatures.

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