Anisotropy of band gap absorption in TlGaSe2 semiconductor by ferroelectric phase transformation

2014 ◽  
Vol 105 (24) ◽  
pp. 242107 ◽  
Author(s):  
Karolis Gulbinas ◽  
Vytautas Grivickas ◽  
Vladimir Gavryushin
Keyword(s):  
Phase Transformation ◽  
Band Gap ◽  
Ferroelectric Phase

Phase transformation and heterojunction construction of bismuth oxyiodides by grinding-assistant calcination in the presence of thiourea and its photoactivity

2021 ◽  
Author(s):  
Zichen Shen ◽  
Huanzhen Liu ◽  
Xuemei Jia ◽  
Qiaofeng Han ◽  
Huiping Bi
Keyword(s):  
Phase Transformation ◽  
Band Gap ◽  
Layered Structure ◽  
Band Gap Energy ◽  
Gap Energy

Bismuth-rich oxyhalides are promising photocatalysts due to their special layered structure and adjustable band gap energy. In this work, a series of bismuth oxyiodides were fabricated by grinding-assistant calcining in...

scholarly journals Paraelectric/antiferroelectric/ferroelectric phase transformation in As-deposited ZrO2 thin films by the TiN capping engineering

2020 ◽  
Vol 195 ◽  
pp. 109020
Author(s):  
Chun-Yuan Wang ◽  
Chin-I Wang ◽  
Sheng-Han Yi ◽  
Teng-Jan Chang ◽  
Chun-Yi Chou ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Ferroelectric Phase

Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement

2021 ◽  
Author(s):  
Kazuto Mizutani ◽  
Takuya HOSHII ◽  
Hitoshi WAKABAYASHI ◽  
Kazuo TSUTSUI ◽  
Edward Yi Chang ◽  
...  
Keyword(s):  
Activation Energy ◽  
Phase Transformation ◽  
Cerium Oxide ◽  
Remnant Polarization ◽  
Ferroelectric Phase ◽  
Filament Formation ◽  
Conductive Filament ◽  
Phase Stabilization ◽  
Different Temperatures ◽  
Ferroelectric Switching

Abstract The effects of 1-nm-thick CeOx capping on 7.5-nm-thick Y-doped HfO2 films on the ferroelectric characteristics are investigated. From the ferroelectric characteristics of the samples annealed at different temperatures from 450 to 600oC and annealing durations, the time (τ) required to stabilize the ferroelectric phase at each temperature was shortened by the capping. The identical activation energy (Ea) of 2.65 eV for ferroelectric stabilization without and with capping suggests the same kinetics for phase transformation. However, an increase in the remnant polarization (Pr) was obtained. Only a few Ce atoms diffused into the underlying HfO2 film even after 600oC annealing. Ferroelectric switching tests revealed an improvement in endurance from 107 to 1010 by the capping, presumably owing to the suppression of conductive filament formation. Therefore, CeOx capping is effective in promoting the ferroelectric phase in HfO2 with high switching endurance.

Low-temperature crystallization and paraelectric–ferroelectric phase transformation in nanoscale ZrO2 thin films induced by atomic layer plasma treatment

2020 ◽  
Vol 8 (11) ◽  
pp. 3669-3677
Author(s):  
Sheng-Han Yi ◽  
Kuei-Wen Huang ◽  
Hsin-Chih Lin ◽  
Miin-Jang Chen
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Low Temperature ◽  
Plasma Treatment ◽  
Ferroelectric Phase ◽  
Atomic Layer ◽  
Treatment Technique ◽  
Low Temperature Crystallization ◽  
Temperature Crystallization

Crystallization and ferroelectricity with high endurance are achieved in ZrO2 thin films at low temperature using an atomic layer plasma treatment technique.

scholarly journals Electric-field-induced paraelectric to ferroelectric phase transformation in prototypical polycrystalline BaTiO3

2014 ◽  
Vol 105 (16) ◽  
pp. 161903 ◽  
Author(s):  
Zhiyang Wang ◽  
Kyle G. Webber ◽  
Jessica M. Hudspeth ◽  
Manuel Hinterstein ◽  
John E. Daniels
Keyword(s):  
Phase Transformation ◽  
Electric Field ◽  
Ferroelectric Phase

Ferroelectric phase transformation in KNO 2

1966 ◽  
Vol 17 (12) ◽  
pp. 1653-1654 ◽  
Author(s):  
K J Rao ◽  
C N R Rao
Keyword(s):  
Phase Transformation ◽  
Ferroelectric Phase

Pressure-Induced Phase Transformation and Band-Gap Engineering of Formamidinium Lead Iodide Perovskite Nanocrystals

2018 ◽  
Vol 9 (15) ◽  
pp. 4199-4205 ◽  
Author(s):  
Hua Zhu ◽  
Tong Cai ◽  
Meidan Que ◽  
Jeong-Pil Song ◽  
Brenda M. Rubenstein ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Band Gap ◽  
Lead Iodide ◽  
Band Gap Engineering ◽  
Perovskite Nanocrystals

Insight into the structure–property relationship of two-dimensional lead-free halide perovskite Cs3Bi2Br9 nanocrystals under pressure

2021 ◽  
Author(s):  
Ting Geng ◽  
Shuai Wei ◽  
Wenya Zhao ◽  
Zhiwei Ma ◽  
Ruijing Fu ◽  
...  
Keyword(s):  
Phase Transformation ◽  
Band Gap ◽  
Lead Free ◽  
Two Dimensional ◽  
Structure Property ◽  
Property Relationship ◽  
Structure Property Relationship ◽  
Halide Perovskite ◽  
Relationship Of ◽  
Insight Into

Pressure-induced phase transformation and narrowed band gap of two-dimensional lead-free halide perovskite Cs3Bi2Br9 nanocrystals.

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