Negative differential resistance in GaN tunneling hot electron transistors

2014 ◽  
Vol 105 (20) ◽  
pp. 202111 ◽  
Author(s):  
Zhichao Yang ◽  
Digbijoy Nath ◽  
Siddharth Rajan
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Hot Electron ◽  
Electron Transistors

Experimental Studies and Physical Model of Efficient, Tunable Injection Using Tunnel-Transparent Dielectric Contacts on Polymer Light-Emitting Devices

2002 ◽  
Vol 734 ◽  
Author(s):  
Ludmila Bakueva ◽  
Sergei Musikhin ◽  
Edward H. Sargent ◽  
Alexander Shik
Keyword(s):  
Dielectric Layer ◽  
Negative Differential Resistance ◽  
Voltage Drop ◽  
Strong Dependence ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Hot Electron ◽  
Injection Efficiency ◽  
Light Emitting ◽  
Light Emitting Devices

ABSTRACTMost conducting polymers used for light-emitting devices have a small electron affinity, creating a high barrier for electron injection resulting in low injection efficiency. To improve injection characteristics, we fabricated and investigated multi-layer contacts with a tunneltransparent dielectric layer of nanometer thickness. Polymer layers were prepared by spin coating, and dielectric and metallic contact layers subsequently grown by vacuum deposition. Samples with such multi-layer cathodes demonstrated a current-voltage characteristic with negative differential resistance. At larger applied voltage, electroluminescence was observed with an efficiency larger than for a simple cathode of the same metal. We have developed a model to describe double injection through multi-layer contacts which explains these salient observed features. The increase in injection efficiency is caused by the voltage drop at the dielectric layer, shifting the metal Fermi level relative to the polymer molecular orbitals responsible for carrier transport. The negative differential resistance is explained by the strong dependence of dielectric tunnel transparency on voltage, a dependence which is qualitatively different for electrons and holes. Further flexibility in the functional characteristics of the injecting contacts is achieved through the use of an additional thin metallic layer playing the role of a base electrode, similar to hot-electron transistors with metallic base.

scholarly journals Tunable negative differential resistance controlled by spin blockade in single-electron transistors

2002 ◽  
Vol 80 (12) ◽  
pp. 2177-2179 ◽  
Author(s):  
M. Ciorga ◽  
M. Pioro-Ladriere ◽  
P. Zawadzki ◽  
P. Hawrylak ◽  
A. S. Sachrajda
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Single Electron ◽  
Single Electron Transistors ◽  
Spin Blockade ◽  
Electron Transistors

One-dimensional ballistic resistor in hot-electron regime: nonlinear and negative differential resistance to 10 THz

1989 ◽  
Vol 25 (15) ◽  
pp. 992 ◽  
Author(s):  
M.J. Kelly ◽  
R.J. Brown ◽  
C.G. Smith ◽  
D.A. Wharam ◽  
M. Pepper ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Hot Electron ◽  
One Dimensional

Room‐temperature switching and negative differential resistance in the heterostructure hot‐electron diode

1988 ◽  
Vol 53 (17) ◽  
pp. 1623-1625 ◽  
Author(s):  
T. K. Higman ◽  
L. M. Miller ◽  
M. E. Favaro ◽  
M. A. Emanuel ◽  
K. Hess ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Hot Electron

Compositional Tuning of Negative Differential Resistance in Bulk Silver Iodide Memristor

2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal
Keyword(s):  
Power Consumption ◽  
Negative Differential Resistance ◽  
Silver Iodide ◽  
Differential Resistance ◽  
Fast Response ◽  
Low Power Consumption ◽  
Switching Effect ◽  
Memory Switching ◽  
Bulk Silver ◽  
Emerging Memory

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

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