Electrical characterization of H2S adsorption on hexagonal WO3 nanowire at room temperature

2014 ◽  
Vol 116 (16) ◽  
pp. 164310 ◽  
Author(s):  
Binquan Liu ◽  
Dongsheng Tang ◽  
Yong Zhou ◽  
Yanling Yin ◽  
Yuehua Peng ◽  
...  
Keyword(s):  
Room Temperature ◽  
Electrical Characterization ◽  
H2s Adsorption ◽  
Hexagonal Wo3 Nanowire

scholarly journals Synthesis and electrical characterization of Ca2Nd4Ti6O20 ceramics

2016 ◽  
Vol 34 (1) ◽  
pp. 164-168
Author(s):  
Raz Muhammad ◽  
Muhammad Uzair ◽  
M. Javid Iqbal ◽  
M. Jawad Khan ◽  
Yaseen Iqbal ◽  
...  
Keyword(s):  
Activation Energy ◽  
Dielectric Constant ◽  
Room Temperature ◽  
Sol Gel ◽  
Electrical Characterization ◽  
Sintered Sample ◽  
First Time ◽  
Alkoxide Precursors ◽  
Room Temperature Dielectric Constant

AbstractCa2Nd4Ti6O20, a layered perov skite structured material was synthesized via a chemical (citrate sol-gel) route for the first time using nitrates and alkoxide precursors. Phase analysis of a sample sintered at 1625 °C revealed the formation of an orthorhombic (Pbn21) symmetry. The microstructure of the sample after sintering comprised rod-shaped grains of a size of 1.5 to 6.5µm. The room temperature dielectric constant of the sintered sample was 38 at 100 kHz. The remnant polarization (Pr) and the coercive field (Ec) were about 400 μC/cm2 and 8.4 kV/cm, respectively. Impedance spectroscopy revealed that the capacitance (13.7 pF) and activation energy (1.39 eV) of the grain boundary was greater than the capacitance (5.7 pF) and activation energy (1.13 eV) of the grain.

Electrical characterization of room temperature humidity sensors in La0.8Sr0.2Fe1−xCuxO3 (x=0, 0.05, 0.10)

2012 ◽  
Vol 38 (4) ◽  
pp. 2865-2872 ◽  
Author(s):  
A. Cavalieri ◽  
T. Caronna ◽  
I. Natali Sora ◽  
J.M. Tulliani
Keyword(s):  
Room Temperature ◽  
Electrical Characterization ◽  
Humidity Sensors

Synthesis and Characterization of Carbon Nitride Thin Film with Evidence of Nanodomes

2004 ◽  
Vol 843 ◽  
Author(s):  
S. Chowdhury ◽  
M. T. Laugier
Keyword(s):  
Thin Film ◽  
Deposition Temperature ◽  
Carbon Nitride ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Microstructural Characterization ◽  
Rf Magnetron Sputtering ◽  
Synthesis And Characterization ◽  
Sputtering System

ABSTRACTWe have reported the synthesis of carbon nitride thin films with evidence of formation of carbon nanodomes over a range of substrate temperature from 50 °C to 550 °C. An RF magnetron sputtering system was used for depositing carbon nitride films. The size of the nanodomes can be controlled by deposition temperature and increases from 40–80 nm at room temperature to 200–400 nm at high temperature (550 °C). Microstructural characterization was performed by AFM. Electrical characterization shows that these films have conductive behaviour with a resistivity depending on the size of the nanodomes. Resistivity values of 20 mΩ-cm were found for nanodomes of size 40–80 nm falling to 6 m?-cm for nanodomes of size 200–400 nm. Nanoindentation results show that the hardness and Young's modulus of these films are in the range from 9–22 GPa and 100–168 GPa respectively and these values decrease as the size of the nanodomes increases. GXRD results confirm that a crystalline graphitic carbon nitride structure has formed.

Electrical Characterization of Al Implanted 4H-SiC Layers by Four Point Probe and Scanning Capacitance Microscopy

2009 ◽  
Vol 615-617 ◽  
pp. 457-460 ◽  
Author(s):  
Filippo Giannazzo ◽  
Martin Rambach ◽  
Dario Salinas ◽  
Fabrizio Roccaforte ◽  
Vito Raineri
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
Electrical Characterization ◽  
Electrical Activation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Activation Data ◽  
Accurate Comparison ◽  
Spike Anneal

We studied the evolution of the electrical activation with annealing temperature and time in 4H-SiC implanted with Al ions at room temperature (RT). An accurate comparison between the electrical activation data obtained by FPP and SCM was carried out. The dependence of the electrically active profiles on annealing time was studied during isothermal (Tann=1600 °C) annealings for times ranging from 0 (spike anneal) to 30 min. By performing isochronal (t=30 min) processes at temperatures from 1550 to 1650 °C, the effect of the annealing temperature on the net doping concentration profiles was studied. Moreover, the activation energy (6.30.3 eV) associated to the process was extracted from the Arrhenius plot of the net active dose. Finally, the effect of the different thermal budgets on the roughening of the Al implanted 4H-SiC surface was also investigated in details by atomic force microscopy.

Epitaxy of Aluminium Films on Semiconductors by Ionized Cluster Beam

1984 ◽  
Vol 37 ◽  
Author(s):  
I. Yamada ◽  
C. J. Palmstrøm ◽  
E. Kennedy ◽  
J. W. Mayer ◽  
H. Inokawa ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Room Temperature ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Life Time ◽  
Cluster Beam ◽  
Clean Surface ◽  
Si Substrate ◽  
Thermal Stability Of

AbstractEpitaxial Al films have been deposited onto the clean surface of single-crystal Si by ionized cluster beam (ICB) at room temperature. Thermal stability of the film has been examined by SEM, AES depth profiling, ion backscat. tering/channeling, and electrical characterization of the Al-Si interface. It was found that the ICB Al film on Si substrate was remarkably stable up to 550°C although pure Al was used. Alloy penetration at the interface, shift of barrier height, degradation of crystalline quality and development of annealing hillocks on the surface were not observed after the heat treatment. Extremely long electromigration life time was also confirmed. Epitaxial growth on GaAs(100) substrate was attempted and preliminary results are given.

Electrical characterization of TiN/a-C/Si devices grown by magnetron sputtering at room temperature

2001 ◽  
Vol 78 (12) ◽  
pp. 1682-1684 ◽  
Author(s):  
N. Konofaos ◽  
C. T. Angelis ◽  
E. K. Evangelou ◽  
Y. Panayiotatos ◽  
C. A. Dimitriadis ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Room Temperature ◽  
Electrical Characterization

Electrical Characterization of Large Area 800 V Enhancement-Mode SiC VJFETs for High Temperature Applications

2009 ◽  
Vol 615-617 ◽  
pp. 715-718 ◽  
Author(s):  
Andrew Ritenour ◽  
Volodymyr Bondarenko ◽  
Robin L. Kelley ◽  
David C. Sheridan
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Electrical Characterization ◽  
Saturation Current ◽  
Large Area ◽  
Enhancement Mode ◽  
High Temperature Operation

Prototype 800 V, 47 A enhancement-mode SiC VJFETs have been developed for high temperature operation (250 °C). With an active area of 23 mm2 and target threshold voltage of +1.25 V, these devices exhibited a 28 m room temperature on-resistance and excellent blocking characteristics at elevated temperature. With improved device packaging, on-resistance and saturation current values of 15 m and 100 A, respectively, are achievable.

Growth and Characterization of Rare-Earth Phosphide/Arsenide Schottky Contacts to GaAs

1998 ◽  
Vol 514 ◽  
Author(s):  
P. P. Lee ◽  
J. H. Chem ◽  
L. P. Sadwick ◽  
R. J. Hwu ◽  
H. Balasubramaniam ◽  
...  
Keyword(s):  
Rare Earth ◽  
Room Temperature ◽  
Lattice Mismatch ◽  
Variable Temperature ◽  
Electrical Characterization ◽  
Limiting Factor ◽  
Lattice Match ◽  
Temperature Lattice ◽  
Semiconductor Contacts

ABSTRACTThe lack of high-temperature thermodynamically stable contacts has been a limiting factor for III-V compound semiconductor metallization. The instability of metal/semiconductor contacts at higher temperatures arises due to factors such as thermodynamic instability at the interface, lack of chemical inertness especially to oxygen containing ambients and a large lattice mismatch to the substrate. Our studies of two rare-earth compounds, dysprosium phosphide (DyP) and dysprosium arsenide (DyAs), demonstrate their potential to address the above problems. The growth and characterization of these two materials and their heterostructures will be presented.Both the DyP and DyAs epilayers were grown using MBD. DyP has an excellent room temperature lattice match to GaAs with a mismatch of about 0.01%, whereas DyAs has a lattice mismatch to GaAs on the order of about 2.4%. Consistent high quality DyP and good quality DyAs epilayers, as characterized by TEM, XRD, AES and AFM were obtained for growth temperatures between 500°C and 600°C. The growth rate was about 0.5 μm/hr and and the RMS roughness of the epilayer surface was typically about 0.5 nm and 1.3 nm for Dyp and DyAs, respectively.Electrical characterization of DyP and DyAs include variable temperature Hall measurements, four point probe, TLM, I-V and C-V measurements. Results show that both DyP and DyAs epilayers are n-type with electron concentration between 3–4 × 1020cm−3 and 2–3×1021cm−3, respectively. The room temperature mobility and resistivity of DyP are 300 cm2/Vsec and 60 μ Ω cm, respectively. The room temperature mobility of DyAs is about 50 cm2/Vsec. DyP forms a Schottky barrier to GaAs with a barrier height of 0.81eV and DyAs forms a weak Schottkyt barrier to GaAs. All relevant data will be presented along with schemes for using DyP and DyAs as potential interconnects to III-V compound semiconductors.

Analysis of C-V Characteristics of InP(p)/InSb/Al2O3/Au MIS Structures in Wide Temperature Range

2013 ◽  
Vol 685 ◽  
pp. 179-184
Author(s):  
M.A. Benamara ◽  
A. Talbi ◽  
Z. Benamara ◽  
B. Akkal ◽  
N. Chabane Sari ◽  
...  
Keyword(s):  
High Speed ◽  
Room Temperature ◽  
Electrical Characterization ◽  
State Density ◽  
Capacitance Voltage ◽  
Different Temperatures ◽  
Increasing Temperature ◽  
Accumulation Region ◽  
Interface Study

Superscript textThe III-V semiconductors materials and in particularly Indium Phosphide are a promising candidates for the elaboration of high speed electronic compounds. The importance of the interface study is increasing considerably in the last years to understand, the mechanism of interface formations and to control perfectly the technology of the elaborated compounds. This study presents an electrical characterization of InP(p)/InSb/Al2O3/ Au structures in the range of temperature varying from the temperature of liquid nitrogen to the temperature of 400°K. In order to give the evolution of electrical parameters of these structures with temperature, we have realized Capacitance-Voltage measurements at high frequency for different temperatures. The found results show that there is dispersion in the accumulation region as function with temperature. The quantity of positive charges in the insulator is estimated to 1.37×1012 atm/cm2 at room temperature. This value decreases slightly with increasing temperature. It varies fromSuperscript text 1.57×1012 atm/cm2 at 77°K to 1.12×1012 atm/cm2 at 400°K. The interface insulator/semiconductor of our samples presents a good electronical quality, the state density is equal to 4.1011 eV-1.cm-2 at room temperature, this one increases from 4.7×1010 eV-1.cm-2 to 7.1011 eV-1.cm-2 when temperature increases from 77°K to 400°K.

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