scholarly journals Electrical modeling of InAs/GaSb superlattice mid-wavelength infrared pin photodiode to analyze experimental dark current characteristics

2014 ◽  
Vol 116 (11) ◽  
pp. 113101 ◽  
Author(s):  
Marie Delmas ◽  
Jean-Baptiste Rodriguez ◽  
Philippe Christol
Keyword(s):  
Dark Current ◽  
Electrical Modeling ◽  
Pin Photodiode ◽  
Current Characteristics

Electrical modeling of InSb PiN photodiode for avalanche operation

2013 ◽  
Vol 113 (18) ◽  
pp. 183716 ◽  
Author(s):  
J. Abautret ◽  
J. P. Perez ◽  
A. Evirgen ◽  
F. Martinez ◽  
P. Christol ◽  
...  
Keyword(s):  
Electrical Modeling ◽  
Pin Photodiode

Giant optical absorption and low dark current characteristics in wrinkled single layer graphene/bismuth nanorods heterostructures

Carbon ◽  
2018 ◽  
Vol 127 ◽  
pp. 596-601 ◽  
Author(s):  
Lichuan Jin ◽  
Yong Xiao ◽  
Dainan Zhang ◽  
Huaiwu Zhang ◽  
Xiaoli Tang ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Dark Current ◽  
Single Layer ◽  
Single Layer Graphene ◽  
Layer Graphene ◽  
Current Characteristics

Dark current characteristics of quantum wire infrared photodetectors

2007 ◽  
Vol 1 (3) ◽  
pp. 140 ◽  
Author(s):  
A. Nasr ◽  
A. Aboshosha ◽  
S.M. Al-Adl
Keyword(s):  
Dark Current ◽  
Quantum Wire ◽  
Infrared Photodetectors ◽  
Current Characteristics

Gain and Dark Current Characteristics of Planar HgCdTe Avalanche Photo Diodes

2007 ◽  
Vol 36 (8) ◽  
pp. 963-970 ◽  
Author(s):  
Gwladys Perrais ◽  
Olivier Gravrand ◽  
Jacques Baylet ◽  
Gerard Destefanis ◽  
Johan Rothman
Keyword(s):  
Dark Current ◽  
Current Characteristics

scholarly journals Влияние условий формирования геттера в высокоомном кремнии на характеристики PIN-фотодиодов

2020 ◽  
Vol 46 (21) ◽  
pp. 11
Author(s):  
И.Б. Чистохин ◽  
К.Б. Фрицлер
Keyword(s):  
Ion Implantation ◽  
Dark Current ◽  
Carrier Lifetime ◽  
High Resistivity ◽  
Phosphorus Doping ◽  
Polysilicon Film ◽  
Pin Photodiode ◽  
Current Value ◽  
Dark Currents ◽  
High Resistivity Silicon

The influence of gettering conditions in high resistivity silicon during the PIN photodiode fabrication process on the reverse dark currents has been studied. It was demonstrated that the getter formation of backside substrate by a combination of phosphorus ion implantation and deposition of polysilicon film followed by phosphorus doping at the temperatures below 900 0C results in reduction of reverse dark current value and increasing of nonequilibrium carrier lifetime.

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