scholarly journals Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations

AIP Advances ◽  
2014 ◽  
Vol 4 (9) ◽  
pp. 097106 ◽  
Author(s):  
Hui-Jun Guo ◽  
Wei Huang ◽  
Xi Liu ◽  
Pan Gao ◽  
Shi-Yi Zhuo ◽  
...  
Author(s):  
Janusz Wozny ◽  
Andrii Kovalchuk ◽  
Zbigniew Lisik ◽  
Jacek Podgorski ◽  
Piotr Bugalski ◽  
...  

AbstractWe carry out Monte Carlo simulations of electron transport in 4H-silicon carbide (4H-SiC) based on the numerically calculated density of states (DOS) to obtain the electron mobility at low electric fields. From the results, it can be concluded that a correct calculation of the DOS requires a very dense wavevector k-mesh when low electron kinetic energies are considered. The crucial issue is the numerical efficiency of the DOS calculation. We investigate the scaling efficiency when different numbers of cores are used.


2006 ◽  
Vol 125 (7) ◽  
pp. 074705 ◽  
Author(s):  
Rodolfo Omar Uñac ◽  
Victor Bustos ◽  
Jarod Wilson ◽  
Giorgio Zgrablich ◽  
Francisco Zaera

2001 ◽  
Vol 194-199 ◽  
pp. 403-410
Author(s):  
V. Parasote ◽  
E. Kentzinger ◽  
Veronique Pierron-Bohnes ◽  
M.C. Cadeville ◽  
A. Kerrache ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document