Light-induced degradation and metastable-state recovery with reaction kinetics modeling in boron-doped Czochralski silicon solar cells

2014 ◽  
Vol 105 (8) ◽  
pp. 083509 ◽  
Author(s):  
Soo Min Kim ◽  
Seungju Chun ◽  
Suhyun Bae ◽  
Seungeun Park ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Reaction Kinetics ◽  
Metastable State ◽  
Silicon Solar Cells ◽  
Czochralski Silicon ◽  
Kinetics Modeling ◽  
Boron Doped ◽  
State Recovery

Atomic Structure of Light-Induced Efficiency-Degrading Defect in Boron-doped Czochralski Silicon Solar Cells

2021 ◽  
Author(s):  
Abigail Rose Meyer ◽  
Craig P Taylor ◽  
Michael Venuti ◽  
Serena Eley ◽  
Vincenzo LaSalvia ◽  
...  
Keyword(s):  
Solar Cells ◽  
Atomic Structure ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Light Exposure ◽  
Minority Carrier Lifetime ◽  
Silicon Solar Cells ◽  
Czochralski Silicon ◽  
Boron Doped

Boron-doped Czochralski (Cz) Si is the most commonly used semiconductor in the fabrication of solar cells. The minority carrier lifetime in boron-doped Cz Si decreases upon light exposure due to...

Light-induced degradation in compensated n-type Czochralski silicon solar cells

2010 ◽  
Vol 208 (3) ◽  
pp. 572-575 ◽  
Author(s):  
Thomas Schutz-Kuchly ◽  
Sébastien Dubois ◽  
Jordi Veirman ◽  
Yannick Veschetti ◽  
Dick Heslinga ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Czochralski Silicon

Degradation of Boron-Doped Czochralski-Grown Silicon Solar Cells

2004 ◽  
Vol 93 (5) ◽  
Author(s):  
J. Adey ◽  
R. Jones ◽  
D. W. Palmer ◽  
P. R. Briddon ◽  
S. Öberg
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Boron Doped

Amorphous silicon solar cells with graded boron‐doped active layers

1983 ◽  
Vol 54 (11) ◽  
pp. 6705-6707 ◽  
Author(s):  
Porponth Sichanugrist ◽  
Masatoshi Kumada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi ◽  
Koichiro Komori
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Active Layers ◽  
Boron Doped

Stability of P-I-N Amorphous Silicon Solar Cells with Boron-Doped and Undoped I-Layers

1985 ◽  
Vol 49 ◽  
Author(s):  
Anthony Catalano ◽  
Rajeewa R. Arya ◽  
Ralph C. Kerns
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Boron Doping ◽  
Poor Quality ◽  
Silicon Solar Cells ◽  
Device Performance ◽  
Layer Material ◽  
Boron Doped ◽  
Conversion Efficiencies ◽  
Initial Conversion

AbstractBoron-doping the i-layer in p-i-n amorphous silicon solar cells improves the device performance when the density of impurities in the undoped i-layer material is high (< 1020 cm-3). While this technique can boost the initial device efficiencies for poor quality i-layer material, our devices degrade faster than devices made with undoped, low impurity i-layer material. We have measured the degradation of photovoltaic parameters as a function of continuous AM1 exposure time for devices with and without B-doped i-layers. For single junction p-i-n solar cells with comparable initial conversion efficiencies (< 7%, area < 1cm2) we find that our devices containing i-layers deposited from gas mixtures containing 2–3 ppm diborane degrade faster than devices containing undoped i-layers. Similar effects are observed when two-junction stacked cells with B-doped i-layers are compared to two-junction stacked cells with undoped i-layers.

Hydrogen Passivation of Defects in Electron Irradiated Polycrystalline Silicon Solar Cells

1995 ◽  
Vol 378 ◽  
Author(s):  
R.R. Bilyalov ◽  
B.M. Abdurakhmanov
Keyword(s):  
Solar Cells ◽  
Polycrystalline Silicon ◽  
Deep Level ◽  
Photovoltaic Performance ◽  
Silicon Solar Cells ◽  
Silicon Substrates ◽  
Hydrogen Passivation ◽  
Boron Doped ◽  
Transient Spectroscopy ◽  
P Type

AbstractThe effect of hydrogen passivation on photovoltaic performance of 1 MeV electron irradiated polycrystalline cast silicon solar cells is described. These cells were processed on cast p-type boron doped polycrystalline silicon substrates using standard technology. Passivation was made by low-energy hydrogen ion implantation on the front side. Cells performance was measured as a function of fluence, and it was found that the hydrogenated cell had the higher radiation resistance.Defect behavior were studied using deep level transient spectroscopy and infra-red spectroscopy. It was shown that the concentration of vacancies (Ec −0,09 eV), divacancies (Ec −0,23 eV) and A-centers (Ec −0,18 eV) is significantly lower in hydrogenated samples. This consistency strengthens the belief that hydrogen interacts with vacancy-type defects to prevent formation of the secondary radiation defects. It is confirmed by IR-measurements.

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