Amorphous silicon solar cells with graded boron‐doped active layers

1983 ◽  
Vol 54 (11) ◽  
pp. 6705-6707 ◽  
Author(s):  
Porponth Sichanugrist ◽  
Masatoshi Kumada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi ◽  
Koichiro Komori
1985 ◽  
Vol 49 ◽  
Author(s):  
Anthony Catalano ◽  
Rajeewa R. Arya ◽  
Ralph C. Kerns

AbstractBoron-doping the i-layer in p-i-n amorphous silicon solar cells improves the device performance when the density of impurities in the undoped i-layer material is high (< 1020 cm-3). While this technique can boost the initial device efficiencies for poor quality i-layer material, our devices degrade faster than devices made with undoped, low impurity i-layer material. We have measured the degradation of photovoltaic parameters as a function of continuous AM1 exposure time for devices with and without B-doped i-layers. For single junction p-i-n solar cells with comparable initial conversion efficiencies (< 7%, area < 1cm2) we find that our devices containing i-layers deposited from gas mixtures containing 2–3 ppm diborane degrade faster than devices containing undoped i-layers. Similar effects are observed when two-junction stacked cells with B-doped i-layers are compared to two-junction stacked cells with undoped i-layers.


Solar Cells ◽  
1986 ◽  
Vol 17 (2-3) ◽  
pp. 191-200 ◽  
Author(s):  
Tokumi Mase ◽  
Hiroshi Takei ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi

2021 ◽  
Vol 108 ◽  
pp. 104960
Author(s):  
Issa Etier ◽  
Anas Al Tarabsheh ◽  
Nithiyananthan Kannan

Solar Energy ◽  
2013 ◽  
Vol 97 ◽  
pp. 591-595 ◽  
Author(s):  
C. Banerjee ◽  
T. Srikanth ◽  
U. Basavaraju ◽  
R.M. Tomy ◽  
M.G. Sreenivasan ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document