Selenization of Sb2Se3 absorber layer: An efficient step to improve device performance of CdS/Sb2Se3 solar cells

2014 ◽  
Vol 105 (8) ◽  
pp. 083905 ◽  
Author(s):  
Meiying Leng ◽  
Miao Luo ◽  
Chao Chen ◽  
Sikai Qin ◽  
Jie Chen ◽  
...  
Keyword(s):  
Solar Cells ◽  
Absorber Layer ◽  
Device Performance ◽  
Improve Device

Schottky Solar Cells with CuInS2 Nanocrystals as Absorber Material

2015 ◽  
Vol 229 (1-2) ◽  
Author(s):  
Holger Borchert ◽  
Dorothea Scheunemann ◽  
Katja Frevert ◽  
Florian Witt ◽  
Andreas Klein ◽  
...  
Keyword(s):  
Solar Cells ◽  
Semiconductor Nanocrystals ◽  
Absorber Layer ◽  
Limiting Factor ◽  
Device Performance ◽  
Layer By Layer ◽  
Copper Indium Disulfide ◽  
Layer Deposition ◽  
Absorber Material ◽  
Cadmium And Lead

AbstractColloidal semiconductor nanocrystals with tunable optical properties are promising materials for light harvesting in solar cells. So far, in particular cadmium and lead chalcogenide nanocrystals were intensively studied in this respect, and the device performance has made rapid progress in recent years. In contrast, less research efforts were undertaken to develop solar cells based on Cd- and Pb-free nanoparticles as absorber material. In the present work, we report on Schottky solar cells with the absorber layer made of colloidal copper indium disulfide nanocrystals. Absorber films with up to ∼ 500 nm thickness were realized by a solution-based layer-by-layer deposition technique. The device performance was systematically studied dependent on the absorber layer thickness. Decreasing photocurrent densities with increasing thickness revealed charge transport to be a limiting factor for the device performance.

Slow surface passivation and crystal relaxation with additives to improve device performance and durability for tin-based perovskite solar cells

2018 ◽  
Vol 11 (9) ◽  
pp. 2353-2362 ◽  
Author(s):  
Efat Jokar ◽  
Cheng-Hsun Chien ◽  
Amir Fathi ◽  
Mohammad Rameez ◽  
Yu-Hao Chang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Conversion Efficiency ◽  
Surface Passivation ◽  
Power Conversion ◽  
Perovskite Solar Cells ◽  
Device Performance ◽  
Slow Surface ◽  
Effective Additive ◽  
Improve Device

Ethylenediammonium diiodide (EDAI2) served as an effective additive for tin-based perovskite solar cells to attain a power conversion efficiency approaching 9%.

Reducing photovoltage loss at the anode contact of methylammonium-free inverted perovskite solar cells by conjugated polyelectrolyte doping

2020 ◽  
Vol 8 (15) ◽  
pp. 7309-7316 ◽  
Author(s):  
He Wang ◽  
Yilong Song ◽  
Yifei Kang ◽  
Song Dang ◽  
Jing Feng ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Device Performance ◽  
Conjugated Polyelectrolyte ◽  
Improve Device ◽  
Well Level ◽  
Enhanced Stability

Doping of conjugated polyelectrolyte (PFN-Br) in MA-free perovskite resulted in a well level matching to reduce VOC loss and improve device performance, achieving a PCE of 20.32% with enhanced stability.

Inverted perovskite solar cells based on potassium salt-modified NiOX hole transport layers

2021 ◽  
Author(s):  
Xinyi Liu ◽  
Hong Wei Qiao ◽  
Mengjiong Chen ◽  
Bing Ge ◽  
Shuang Yang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Potassium Salt ◽  
Perovskite Solar Cells ◽  
Hole Transport ◽  
Device Performance ◽  
Potassium Salts ◽  
Hole Transport Layers ◽  
Improve Device

Potassium salts modified NiOX could improve the perovskite film coverage and reduce trap densities, so as to improve device performance.

scholarly journals Evaluation of CdS Interfacial Layers in ZnO Nanowire/Poly(3-Hexylthiophene) Solar Cells

2012 ◽  
Vol 2012 ◽  
pp. 1-8
Author(s):  
John W. Murphy ◽  
Israel Mejia ◽  
Bruce E. Gnade ◽  
Manuel A. Quevedo-Lopez
Keyword(s):  
Solar Cells ◽  
Interfacial Layer ◽  
Nanowire Array ◽  
Device Performance ◽  
Zno Nanowire ◽  
Interfacial Layers ◽  
Conformal Coating ◽  
Bilayer Device ◽  
Improve Device ◽  
Nonuniform Surfaces

We prepare ZnO:poly(3-hexylthiophene) (P3HT) thin-film solar cells and ZnO nanowire:P3HT nanostructured solar cells and evaluate the effect of adding an interfacial layer between the ZnO and P3HT as a function of the nanowire height. We evaluate several different interlayers of CdS deposited, using two different chemical bath deposition (CBD) recipes. The height of the nanowire array is varied from a bilayer device with no nanowires up to arrays with a height of 2 μm. We find that achieving a conformal coating of the ZnO with the interfacial layer is critical to improve device performance and that CBD can be used to grow conformal films on nonuniform surfaces.

A nonvolatile morphology regulator for enhancing the molecular order in the active layer and power conversion efficiency of polymer solar cells

2018 ◽  
Vol 6 (19) ◽  
pp. 8874-8879 ◽  
Author(s):  
Hong-Jyun Jhuo ◽  
Sunil Sharma ◽  
Hsin-Lung Chen ◽  
Show-An Chen
Keyword(s):  
Solar Cells ◽  
Power Conversion Efficiency ◽  
Active Layer ◽  
Conversion Efficiency ◽  
Polymer Solar Cells ◽  
Power Conversion ◽  
Device Performance ◽  
Molecular Order ◽  
Improve Device

We propose PDI–PC61BM as an NVMR in the active layer to promote molecular order and improve device performance from 10.63% to 12.23%.

A Novel High-Stress Pre-Metal Dielectric Film to Improve Device Performance for sub-65nm CMOS Manufacturing

2006 ◽  
Vol 913 ◽  
Author(s):  
Young Way Teh ◽  
John Sudijono ◽  
Alok Jain ◽  
Shankar Venkataraman ◽  
Sunder Thirupapuliyur ◽  
...  
Keyword(s):  
Performance Improvement ◽  
Dielectric Film ◽  
High Stress ◽  
Significant Degree ◽  
Strain Effect ◽  
Device Performance ◽  
Hot Carrier ◽  
Tcad Simulation ◽  
Improve Device ◽  
Deposition Techniques

AbstractThis work focuses on the development and physical characteristics of a novel dielectric film for a pre-metal dielectric (PMD) application which induces a significant degree of tensile stress in the channel of a sub-65nm node CMOS structure. The film can be deposited at low temperatures to meet the requirements of NiSi integration while maintaining void-free gap fill and superior film quality such as moisture content and uniformity. A manufacturable and highly reliable oxide film has been demonstrated through both TCAD simulation and real device data, showing ~6% NMOS Ion-Ioff improvement; no Ion-Ioff improvement or degradation on PMOS. A new concept has been proposed to explain the PMD strain effect on device performance improvement. Improvement in Hot Carrier immunity is observed compared to similar existing technologies using high density plasma (HDP) deposition techniques.

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