Role of the inversion layer on the charge injection in silicon nanocrystal multilayered light emitting devices

2016 ◽  
Vol 120 (9) ◽  
pp. 093108 ◽  
Author(s):  
S. Tondini ◽  
G. Pucker ◽  
L. Pavesi
Keyword(s):  
Inversion Layer ◽  
Charge Injection ◽  
Silicon Nanocrystal ◽  
Light Emitting ◽  
Light Emitting Devices

Fabrication of ZnO and its enhancement of charge injection and transport in hybrid organic/inorganic light emitting devices

2007 ◽  
Vol 253 (18) ◽  
pp. 7506-7509 ◽  
Author(s):  
J.P. Liu ◽  
S.C. Qu ◽  
X.B. Zeng ◽  
Y. Xu ◽  
X.F. Gou ◽  
...  
Keyword(s):  
Charge Injection ◽  
Light Emitting ◽  
Light Emitting Devices

Role of host excimer formation in the degradation of organic light-emitting devices

2020 ◽  
Vol 116 (6) ◽  
pp. 063302
Author(s):  
Robert Newcomb ◽  
John S. Bangsund ◽  
Kyle W. Hershey ◽  
Dominea C. K. Rathwell ◽  
Hong-Yeop Na ◽  
...  
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Excimer Formation ◽  
Organic Light Emitting Devices

Non-Radiative Competition in the Excitation of Erbium Implanted Silicon Light Emitting Devices

1995 ◽  
Vol 392 ◽  
Author(s):  
T Taskin ◽  
Q Huda ◽  
A Scholes ◽  
J H Evans ◽  
A R Peaker ◽  
...  
Keyword(s):  
Threshold Current ◽  
Threshold Current Density ◽  
Extended Defects ◽  
Cross Sectional ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Radiative Processes ◽  
Luminescence Efficiency ◽  
High Concentrations

AbstractThis paper reports a study of the non-radiative processes competing with the excitation of the erbium ion in layers implanted with high concentrations of erbium and oxygen. These processes reduce the luminescence efficiency of the Si:Er system and dramatically increase the threshold current density calculated to be necessary for an ultimate goal, the Si/Ge:Er LASER. Using cross sectional TEM, photoluminescence as a function of temperature and DLTS, it is demonstrated that a two stage anneal procedure which avoids the formation of extended defects and removes specific deep states is necessary to obtain efficient Er3+ excitation at high erbium concentrations. Comparisons are made with damage resulting from germanium implantation into silicon. The role of multiple stage anneals is discussed in relation to the removal of Shockley-Hall-Read recombination centres

Hybrid Silicon Nanocrystal−Organic Light-Emitting Devices for Infrared Electroluminescence

Nano Letters ◽  
2010 ◽  
Vol 10 (4) ◽  
pp. 1154-1157 ◽  
Author(s):  
Kai-Yuan Cheng ◽  
Rebecca Anthony ◽  
Uwe R. Kortshagen ◽  
Russell J. Holmes
Keyword(s):  
Silicon Nanocrystal ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Organic Light Emitting Devices ◽  
Hybrid Silicon
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