GaAsSb/GaAsN short-period superlattices as a capping layer for improved InAs quantum dot-based optoelectronics

2014 ◽  
Vol 105 (4) ◽  
pp. 043105 ◽  
Author(s):  
A. D. Utrilla ◽  
D. F. Reyes ◽  
J. M. Ulloa ◽  
D. González ◽  
T. Ben ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Capping Layer ◽  
Short Period ◽  
Short Period Superlattices ◽  
Inas Quantum Dot

scholarly journals STUDY OF SELF-ASSEMBLED InAs QUANTUM DOT STRUCTURE COVERED BY InxGa1-xAs(0≤x≤0.3) CAPPING LAYER

2000 ◽  
Vol 49 (11) ◽  
pp. 2230
Author(s):  
WANG XIAO-DONG ◽  
LIU HUI-YUN ◽  
NIU ZHI-CHUAN ◽  
FENG SONG-LIN
Keyword(s):  
Quantum Dot ◽  
Capping Layer ◽  
Self Assembled ◽  
Inas Quantum Dot

Modification of InAs quantum dot structure by the growth of the capping layer

1998 ◽  
Vol 73 (1) ◽  
pp. 49-51 ◽  
Author(s):  
G. D. Lian ◽  
J. Yuan ◽  
L. M. Brown ◽  
G. H. Kim ◽  
D. A. Ritchie
Keyword(s):  
Quantum Dot ◽  
Capping Layer ◽  
Inas Quantum Dot

Self-organized quantum dot structures in strained (GaP)n(InP)m short period superlattices grown on GaAs (N 1 1) by gas-source MBE

1997 ◽  
Vol 175-176 ◽  
pp. 754-759
Author(s):  
S.J. Kim ◽  
H. Asahi ◽  
M. Takemoto ◽  
K. Asami ◽  
J.H. Noh ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Self Organized ◽  
Gas Source ◽  
Short Period ◽  
Short Period Superlattices ◽  
Gas Source Mbe

Persistent photoconductivity in uniforndy and selectively silicon doped AlAs / GaAs short period superlattices

1991 ◽  
Vol 1 (4) ◽  
pp. 503-510 ◽  
Author(s):  
P. Jeanjean ◽  
J. Sicart ◽  
J. L. Robert ◽  
F. Mollot ◽  
R. Planel
Keyword(s):  
Persistent Photoconductivity ◽  
Short Period ◽  
Short Period Superlattices ◽  
Silicon Doped

Blue-green lasers based on short-period superlattices in II-VI compounds

1999 ◽  
Vol 169 (4) ◽  
pp. 468 ◽  
Author(s):  
S.V. Ivanov ◽  
Petr S. Kop'ev ◽  
A.A. Toropov
Keyword(s):  
Short Period ◽  
Short Period Superlattices
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