scholarly journals Microscopic model for exchange bias from grain-boundary disorder in a ferromagnet/antiferromagnet thin film with a nanocrystalline microstructure

2014 ◽  
Vol 105 (3) ◽  
pp. 032402 ◽  
Author(s):  
D. L. Cortie ◽  
A. G. Biternas ◽  
R. W. Chantrell ◽  
X. L. Wang ◽  
F. Klose
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Exchange Bias ◽  
Microscopic Model ◽  
Nanocrystalline Microstructure

On the role of tin underlays for the prevention of thermal grooving in thin gold films

1986 ◽  
Vol 44 ◽  
pp. 732-733
Author(s):  
Jin Young Kim ◽  
R. E. Hummel ◽  
R. T. DeHoff
Keyword(s):  
Thin Film ◽  
Free Surface ◽  
Grain Boundary ◽  
Beneficial Effect ◽  
Failure Mechanism ◽  
Failure Mechanisms ◽  
Distinct Advantage ◽  
Gold Films ◽  
Gold Thin Film

Gold thin film metallizations in microelectronic circuits have a distinct advantage over those consisting of aluminum because they are less susceptible to electromigration. When electromigration is no longer the principal failure mechanism, other failure mechanisms caused by d.c. stressing might become important. In gold thin-film metallizations, grain boundary grooving is the principal failure mechanism.Previous studies have shown that grain boundary grooving in gold films can be prevented by an indium underlay between the substrate and gold. The beneficial effect of the In/Au composite film is mainly due to roughening of the surface of the gold films, redistribution of indium on the gold films and formation of In2O3 on the free surface and along the grain boundaries of the gold films during air annealing.

Magnetic textures in hemispherical thin film caps with in-plane exchange bias

2021 ◽  
Vol 129 (1) ◽  
pp. 015305
Author(s):  
Andreea Tomita ◽  
Meike Reginka ◽  
Rico Huhnstock ◽  
Maximilian Merkel ◽  
Dennis Holzinger ◽  
...  
Keyword(s):  
Thin Film ◽  
Exchange Bias

Spatially resolved investigation of the defect states in methylammonium lead iodide perovskite bicrystals

2019 ◽  
Vol 7 (42) ◽  
pp. 13156-13160 ◽  
Author(s):  
Svetlana Sirotinskaya ◽  
Christian Fettkenhauer ◽  
Daichi Okada ◽  
Yohei Yamamoto ◽  
Doru C. Lupascu ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
System Approach ◽  
Defect States ◽  
Lead Iodide ◽  
Modal System ◽  
Trap Formation ◽  
Spatially Resolved ◽  
Methylammonium Lead Iodide

Introducing a modal system approach for the analytical perovskite thin-film trap physics evaluation. Our study confirms existing models for trap formation in MAPI, substantiating different defect states in the grain boundary and bulk regions.

Grain Boundary Characterisation in Sequentially Laterally Solidified Polycrystalline-Silicon Thin Film Transistors

2019 ◽  
Vol 8 (1) ◽  
pp. 211-216
Author(s):  
Antonio Valletta ◽  
Alessandra Bonfiglietti ◽  
Matteo Rapisarda ◽  
Alessandro Pecora ◽  
Luigi Mariucci ◽  
...  
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Thin Film

Effect of ultra-thin Cu underlayer on the magnetic properties of Ni80Fe50 / Fe50Mn50 films

1999 ◽  
Vol 562 ◽  
Author(s):  
C. Liu ◽  
L. Shen ◽  
H. Jiang ◽  
D. Yang ◽  
G. Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Exchange Bias ◽  
Film Material ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Maximum Value ◽  
Film Roughness

ABSTRACTThe Ni80Fe20/Fe50Mn50,thin film system exhibits exchange bias behavior. Here a systematic study of the effect of atomic-scale thin film roughness on coercivity and exchange bias is presented. Cu (t) / Ta (100 Å) / Ni80Fe20 (100 Å) / Fe50Mno50 (200 Å) / Ta (200 Å) with variable thickness, t, of the Cu underlayer were DC sputtered on Si (100) substrates. The Cu underlayer defines the initial roughness that is transferred to the film material since the film grows conformal to the initial morphology. Atomic Force Microscopy and X-ray diffraction were used to study the morphology and texture of the films. Morphological characterization is then correlated with magnetometer measurements. Atomic Force Microscopy shows that the root mean square value of the film roughness exhibits a maximum of 2.5 Å at t = 2.4 Å. X-ray diffraction spectra show the films are polycrystalline with fcc (111) texture and the Fe50Mn50 (111) peak intensity decreases monotonically with increasing Cu thickness, t. Without a Cu underlayer, the values of the coercivity and loop shift are, Hc = 12 Oe and Hp = 56 Oe, respectively. Both the coercivity and loop shift change with Cu underlayer thickness. The coercivity reaches a maximum value of Hc= 36 Oe at t = 4 Å. The loop shift exhibits an initial increase with t, reaches a maximum value of HP = 107 Oe at t = 2.4 Å, followed by a decrease with greater Cu thickness. These results show that a tiny increase in the film roughness has a huge effect on the exchange bias magnitude.

Grain boundary diffusion in bilayered Ag/Cu thin film under diffusion-induced and intrinsic stresses

2021 ◽  
Vol 96 (5) ◽  
pp. 055706
Author(s):  
Songyou Lian ◽  
Congkang Xu ◽  
Jiangyong Wang ◽  
Hendrik C Swart ◽  
Jacobus J Terblans
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Cu Thin Film
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