Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

2014 ◽  
Vol 116 (2) ◽  
pp. 023502 ◽  
Author(s):  
C. Himwas ◽  
M. den Hertog ◽  
E. Bellet-Amalric ◽  
R. Songmuang ◽  
F. Donatini ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Ultraviolet Emission

Room temperature intraband Raman emission and ultrafast carrier relaxation in GaN/AlN quantum dots

2009 ◽  
Vol 6 (S2) ◽  
pp. S650-S653
Author(s):  
L. Nevou ◽  
J. Mangeney ◽  
M. Tchernycheva ◽  
F. H. Julien ◽  
F. Guillot ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Carrier Relaxation ◽  
Ultrafast Carrier

InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels

2021 ◽  
Vol 238 ◽  
pp. 111514
Author(s):  
Sergii Golovynskyi ◽  
Oleksandr I. Datsenko ◽  
Luca Seravalli ◽  
Giovanna Trevisi ◽  
Paola Frigeri ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Light Emission ◽  
Deep Levels ◽  
Photoelectric Properties

Room temperature synthesis of Sn2+ doped highly luminescent CsPbBr3 quantum dots for high CRI white light-emitting diodes

Nanoscale ◽  
2021 ◽  
Author(s):  
Dongdong Yan ◽  
Qionghua Mo ◽  
Shuangyi Zhao ◽  
Wensi Cai ◽  
Zhigang Zang
Keyword(s):  
Quantum Dots ◽  
Quantum Yield ◽  
White Light ◽  
Room Temperature ◽  
Temperature Synthesis ◽  
Light Emitting ◽  
Photoluminescence Quantum Yield ◽  
Hot Injection ◽  
White Light Emitting Diodes ◽  
Cspbbr3 Quantum Dots

With a high photoluminescence quantum yield (PLQY) being able to exceed 90% for those prepared by hot injection method, CsPbBr3 quantum dots (QDs) have attracted intensive attentions for white light-emitting...

scholarly journals Luminescence from Droplet-Etched GaAs Quantum Dots at and Close to Room Temperature

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 690
Author(s):  
Leonardo Ranasinghe ◽  
Christian Heyn ◽  
Kristian Deneke ◽  
Michael Zocher ◽  
Roman Korneev ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Penetration Depth ◽  
Gaas Substrate ◽  
Room Temperature ◽  
Green Laser ◽  
Significant Loss ◽  
Blue Laser ◽  
Ambient Conditions ◽  
Thermal Escape ◽  
Intensity Loss

Epitaxially grown quantum dots (QDs) are established as quantum emitters for quantum information technology, but their operation under ambient conditions remains a challenge. Therefore, we study photoluminescence (PL) emission at and close to room temperature from self-assembled strain-free GaAs quantum dots (QDs) in refilled AlGaAs nanoholes on (001)GaAs substrate. Two major obstacles for room temperature operation are observed. The first is a strong radiative background from the GaAs substrate and the second a significant loss of intensity by more than four orders of magnitude between liquid helium and room temperature. We discuss results obtained on three different sample designs and two excitation wavelengths. The PL measurements are performed at room temperature and at T = 200 K, which is obtained using an inexpensive thermoelectric cooler. An optimized sample with an AlGaAs barrier layer thicker than the penetration depth of the exciting green laser light (532 nm) demonstrates clear QD peaks already at room temperature. Samples with thin AlGaAs layers show room temperature emission from the QDs when a blue laser (405 nm) with a reduced optical penetration depth is used for excitation. A model and a fit to the experimental behavior identify dissociation of excitons in the barrier below T = 100 K and thermal escape of excitons from QDs above T = 160 K as the central processes causing PL-intensity loss.

Notizen:Phosphorescence Decay in Thallium-Doped Ammonium Chloride

1978 ◽  
Vol 33 (10) ◽  
pp. 1241-1242 ◽  
Author(s):  
S. Chaudhari ◽  
T. R. Joshi ◽  
R. V. Joshi
Keyword(s):  
Aqueous Solution ◽  
Ammonium Chloride ◽  
Mechanical Treatment ◽  
Room Temperature ◽  
Host Lattice ◽  
Luminescence Decay ◽  
Decay Rates ◽  
Negative Ion ◽  
Ultraviolet Emission ◽  
Near Ultraviolet

Abstract The phosphorescence decay rates of thallium-doped ammonium chloride (NH4Cl:Tl) phosphors, prepared by crystallization from aqueous solution, have been studied at room temperature for near-ultraviolet emission. The effects of impurity concentration as well as thermal and/or mechanical treatment on the decay rates have been examined. Phosphorescence centres consisting of a Tl+ion and a nearby negative ion vacancy are suggested to be responsible for the observed luminescence decay. The changes in the decay characteristics after pretreatments are explained on the basis of the location of the centres in normal and distorted regions of the host lattice.

Rapid Detection of Acrylamide in Food Using Mn-Doped ZnS Quantum Dots as a Room Temperature Phosphorescent Probe

2017 ◽  
Vol 11 (5) ◽  
pp. 1367-1373 ◽  
Author(s):  
Burak Demirhan ◽  
Buket Er Demirhan ◽  
Nusret Ertas ◽  
Hayriye Eda Satana Kara
Keyword(s):  
Quantum Dots ◽  
Rapid Detection ◽  
Room Temperature ◽  
Mn Doped

scholarly journals Photooxidation and Photobleaching of Single CdSe/ZnS Quantum Dots Probed by Room-Temperature Time-Resolved Spectroscopy

2001 ◽  
Vol 105 (35) ◽  
pp. 8281-8284 ◽  
Author(s):  
Wilfried G. J. H. M. van Sark ◽  
Patrick L. T. M. Frederix ◽  
Dave J. Van den Heuvel ◽  
Hans C. Gerritsen ◽  
Ageeth A. Bol ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Time Resolved ◽  
Time Resolved Spectroscopy ◽  
Temperature Time

Room temperature driven highly crystalline fluorine-doped carbon quantum dots for sensitive tetracycline sensing

2021 ◽  
Vol 114 ◽  
pp. 110967
Author(s):  
Yiqian Huang ◽  
Xiaosong Huang ◽  
Huashan Lin ◽  
Zhikun Liu ◽  
Yi Zong
Keyword(s):  
Quantum Dots ◽  
Room Temperature ◽  
Carbon Quantum Dots
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