scholarly journals Buffer transport mechanisms in intentionally carbon doped GaN heterojunction field effect transistors

2014 ◽  
Vol 104 (26) ◽  
pp. 263505 ◽  
Author(s):  
Michael J. Uren ◽  
Markus Cäsar ◽  
Mark A. Gajda ◽  
Martin Kuball
2013 ◽  
Vol 1 (13) ◽  
pp. 2433 ◽  
Author(s):  
Sreenivasa Reddy Puniredd ◽  
Adam Kiersnowski ◽  
Glauco Battagliarin ◽  
Wojciech Zajączkowski ◽  
Wallace W. H. Wong ◽  
...  

2018 ◽  
Vol 57 (6S3) ◽  
pp. 06KA03
Author(s):  
Kenta Watanabe ◽  
Daiki Terashima ◽  
Mikito Nozaki ◽  
Takahiro Yamada ◽  
Satoshi Nakazawa ◽  
...  

2013 ◽  
Vol 103 (16) ◽  
pp. 163504 ◽  
Author(s):  
C. Y. Zhu ◽  
F. Zhang ◽  
R. A. Ferreyra ◽  
V. Avrutin ◽  
Ü. Özgür ◽  
...  

2020 ◽  
Vol 8 (44) ◽  
pp. 15759-15770
Author(s):  
Alexandra Harbuzaru ◽  
Iratxe Arrechea-Marcos ◽  
Alberto D. Scaccabarozzi ◽  
Yingfeng Wang ◽  
Xugang Guo ◽  
...  

Different charge transport mechanisms at the device interface are found for a series of ladder-type semiconductors with increasing chain length.


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