scholarly journals Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels

2014 ◽  
Vol 104 (24) ◽  
pp. 243505 ◽  
Author(s):  
S. Bolat ◽  
C. Ozgit-Akgun ◽  
B. Tekcan ◽  
N. Biyikli ◽  
A. K. Okyay
2021 ◽  
Vol 52 (S2) ◽  
pp. 472-476
Author(s):  
Qi Li ◽  
Huijin Li ◽  
Junchen Dong ◽  
Jingyi Wang ◽  
Dedong Han ◽  
...  

2012 ◽  
Vol 51 (2S) ◽  
pp. 02BF04 ◽  
Author(s):  
Yumi Kawamura ◽  
Mai Tani ◽  
Nozomu Hattori ◽  
Naomasa Miyatake ◽  
Masahiro Horita ◽  
...  

2015 ◽  
Vol 3 (37) ◽  
pp. 9620-9630 ◽  
Author(s):  
Ali Haider ◽  
Seda Kizir ◽  
Cagla Ozgit-Akgun ◽  
Eda Goldenberg ◽  
Shahid Ali Leghari ◽  
...  

Hollow cathode plasma assisted atomic layer deposited InxGa1−xN alloys show successful tunability of the optical band gap by changing the In concentration in a wide range.


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