scholarly journals Direct determination of the band offset in atomic layer deposited ZnO/hydrogenated amorphous silicon heterojunctions from X-ray photoelectron spectroscopy valence band spectra

2014 ◽  
Vol 115 (20) ◽  
pp. 203715 ◽  
Author(s):  
L. Korte ◽  
R. Rößler ◽  
C. Pettenkofer
Keyword(s):  
Photoelectron Spectroscopy ◽  
Hydrogenated Amorphous Silicon ◽  
Direct Determination ◽  
Atomic Layer ◽  
Band Offset ◽  
X Ray ◽  
Band Spectra ◽  
Silicon Heterojunctions ◽  
Hydrogenated Amorphous

scholarly journals Band Offset Measurements in Atomic-Layer-Deposited Al2O3/Zn0.8Al0.2O Heterojunction Studied by X-ray Photoelectron Spectroscopy

2017 ◽  
Vol 12 (1) ◽  
Author(s):  
Baojun Yan ◽  
Shulin Liu ◽  
Yuekun Heng ◽  
Yuzhen Yang ◽  
Yang Yu ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Atomic Layer ◽  
Band Offset ◽  
X Ray

BBonding in minerals: the application of PAX (photoelectron and X-ray) spectroscopy to the direct determination of electronic structure

1989 ◽  
Vol 53 (370) ◽  
pp. 153-164 ◽  
Author(s):  
David S. Urch
Keyword(s):  
Electronic Structure ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Direct Determination ◽  
Energy Scale ◽  
X Ray ◽  
Electron Transitions ◽  
Dipole Selection Rule ◽  
The Individual

AbstractX-ray photoelectron spectroscopy can be used to measure the ionization energies of electrons in both valence band and core orbitals. As core vacancies are the initial states for X-ray emission, a knowledge of their energies for all atoms in a mineral enables all the X-ray spectra to be placed on a common energy scale. X-ray spectra are atom specific and are governed by the dipole selection rule. Thus the individual bonding roles of the different atoms are revealed by the fine structure of valence X-ray peaks (i.e. peaks which result from electron transitions between valence band orbitals and core vacancies). The juxtaposition of such spectra enables the composition of the molecular orbitals that make up the chemical bonds of a mineral to be determined.Examples of this approach to the direct determination of electronic structure are given for silica, forsterite, brucite, and pyrite. Multi-electron effects and developments involving anisotropic X-ray emission from single crystals are also discussed.

Photo-Oxidation of Hydrogenated Amorphous Silicon-Carbon Alloys

1989 ◽  
Vol 158 ◽  
Author(s):  
P. John ◽  
I.M. Odeh ◽  
A. Qayyum ◽  
J.I.B. Wilson
Keyword(s):  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Rf Discharge ◽  
Silicon Substrates ◽  
Capacitively Coupled ◽  
X Ray ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-carbon alloys, a-Si:C:H, have been deposited as thin films (d=0.1-0.5 micron) on crystalline silicon substrates from a capacitively coupled rf discharge in silane-propane mixtures. Variations in the stoichiometry of the films were achieved by altering the ratio of SiH4 to C3H8 flow rates at a sbstrate temperature in the range 240-260°C and total pressure between 30-70 mtorr. The silicon to carbon ratios were established by X-ray photoelectron spectroscopy, XPS, and the hydrogen content and distribution by infra-red spectroscopy.

Determination of MBE grown wurtzite GaN/Ge3 N4 /Ge heterojunctions band offset by X-ray photoelectron spectroscopy

2011 ◽  
Vol 249 (1) ◽  
pp. 58-61 ◽  
Author(s):  
Mahesh Kumar ◽  
Mohana K. Rajpalke ◽  
Basanta Roul ◽  
Thirumaleshwara N. Bhat ◽  
A. T. Kalghatgi ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
X Ray

Experimental determination of valence band offset at PbTe/CdTe(111) heterojunction interface by x-ray photoelectron spectroscopy

2008 ◽  
Vol 93 (20) ◽  
pp. 202101 ◽  
Author(s):  
Jianxiao Si ◽  
Shuqiang Jin ◽  
Hanjie Zhang ◽  
Ping Zhu ◽  
Dongjiang Qiu ◽  
...  
Keyword(s):  
Experimental Determination ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray
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