Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

E. García-Hemme; R. García-Hernansanz; J. Olea; D. Pastor; A. del Prado; I. Mártil; G. González-Díaz

doi:10.1063/1.4879851

Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

Applied Physics Letters ◽

10.1063/1.4879851 ◽

2014 ◽

Vol 104 (21) ◽

pp. 211105 ◽

Cited By ~ 24

Author(s):

E. García-Hemme ◽

R. García-Hernansanz ◽

J. Olea ◽

D. Pastor ◽

A. del Prado ◽

...

Keyword(s):

Room Temperature ◽

Infrared Photodetector ◽

Silicon Based ◽

Room Temperature Operation

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Room temperature operation and low dark current of In0.15Ga0.85As/InAs/In0.15Ga0.85As dot-in-well short-wave infrared photodetector: Experimental and theoretical correlation

Superlattices and Microstructures ◽

10.1016/j.spmi.2020.106715 ◽

2020 ◽

Vol 148 ◽

pp. 106715

Author(s):

Vidya P. Deviprasad ◽

Debiprasad Panda ◽

Sritoma Paul ◽

Shubham Mondal ◽

Jhuma Saha ◽

...

Keyword(s):

Dark Current ◽

Room Temperature ◽

Short Wave ◽

Infrared Photodetector ◽

Short Wave Infrared ◽

Room Temperature Operation

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Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector

Applied Physics Letters ◽

10.1063/1.1362201 ◽

2001 ◽

Vol 78 (17) ◽

pp. 2428-2430 ◽

Cited By ~ 116

Author(s):

Shiang-Feng Tang ◽

Shih-Yen Lin ◽

Si-Chen Lee

Keyword(s):

Quantum Dot ◽

Room Temperature ◽

Infrared Photodetector ◽

Quantum Dot Infrared Photodetector ◽

Gaas Quantum Dot ◽

Room Temperature Operation

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Nano-scale NiSi and n-type silicon based Schottky barrier diode as a near infra-red detector for room temperature operation

Journal of Applied Physics ◽

10.1063/1.4896365 ◽

2014 ◽

Vol 116 (12) ◽

pp. 124507 ◽

Cited By ~ 5

Author(s):

S. Roy ◽

K. Midya ◽

S. P. Duttagupta ◽

D. Ramakrishnan

Keyword(s):

Schottky Barrier ◽

Room Temperature ◽

Schottky Barrier Diode ◽

Nano Scale ◽

Type Silicon ◽

Infra Red ◽

Silicon Based ◽

Room Temperature Operation

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Capacitive infrared photodetector for room temperature operation

Applied Physics Letters ◽

10.1063/1.4795520 ◽

2013 ◽

Vol 102 (10) ◽

pp. 103108 ◽

Cited By ~ 11

Author(s):

Saumil Bandyopadhyay ◽

John Anderson

Keyword(s):

Room Temperature ◽

Infrared Photodetector ◽

Room Temperature Operation

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Room-Temperature Operation of Silicon Single-Electron Transistor Fabricated Using Optical Lithography

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2010.2086475 ◽

2011 ◽

Vol 10 (1) ◽

pp. 96-98 ◽

Cited By ~ 23

Author(s):

Yongshun Sun ◽

Rusli ◽

Navab Singh

Keyword(s):

Room Temperature ◽

Optical Lithography ◽

Single Electron ◽

Single Electron Transistor ◽

Room Temperature Operation

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Room temperature operation and DC characteristics of InAlN/GaN/AlGaN Hot Electron Transistors with common base transfer ratio, α = 0.97

68th Device Research Conference ◽

10.1109/drc.2010.5551877 ◽

2010 ◽

Author(s):

Sansaptak Dasgupta ◽

Nidhi ◽

A. Raman ◽

J.S. Speck ◽

Umesh K. Mishra

Keyword(s):

Room Temperature ◽

Hot Electron ◽

Transfer Ratio ◽

Dc Characteristics ◽

Common Base ◽

Electron Transistors ◽

Room Temperature Operation

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Room Temperature Operation of an In-Plane Half-Adder Based on Ballistic Y–Junctions

IEEE Electron Device Letters ◽

10.1109/led.2004.831225 ◽

2004 ◽

Vol 25 (7) ◽

pp. 462-464 ◽

Cited By ~ 17

Author(s):

S. Reitzenstein ◽

L. Worschech ◽

A. Forchel

Keyword(s):

Room Temperature ◽

Half Adder ◽

Room Temperature Operation

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Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor

Applied Physics Letters ◽

10.1063/1.1894594 ◽

2005 ◽

Vol 86 (12) ◽

pp. 123118 ◽

Cited By ~ 30

Author(s):

Tetsuya Kitade ◽

Kensaku Ohkura ◽

Anri Nakajima

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistor ◽

Exclusive Or ◽

Room Temperature Operation

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Room temperature operation of a GaAs tristate switch with a double triangular barrier structure

Journal of Materials Science Materials in Electronics ◽

10.1007/bf00186192 ◽

1994 ◽

Vol 5 (4) ◽

Author(s):

K.F. Yarn ◽

Y.H. Wang

Keyword(s):

Room Temperature ◽

Barrier Structure ◽

Room Temperature Operation

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Development of 4V-Class Bulk-Type All-Solid-State Lithium Rechargeable Batteries by a Combined Use of Complex Hydride and Sulfide Electrolytes for Room Temperature Operation

MATERIALS TRANSACTIONS ◽

10.2320/matertrans.m2017022 ◽

2017 ◽

Vol 58 (7) ◽

pp. 1063-1068 ◽

Cited By ~ 7

Author(s):

Atsushi Unemoto ◽

Genki Nogami ◽

Masaru Tazawa ◽

Mitsugu Taniguchi ◽

Shin-ichi Orimo

Keyword(s):

Solid State ◽

Room Temperature ◽

Rechargeable Batteries ◽

Complex Hydride ◽

Lithium Rechargeable Batteries ◽

Combined Use ◽

Room Temperature Operation

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