Metallic filament formation by aligned oxygen vacancies in ZnO-based resistive switches

2014 ◽  
Vol 115 (20) ◽  
pp. 203707 ◽  
Keyword(s):  
Oxygen Vacancies ◽  
Filament Formation ◽  
Metallic Filament ◽  
Resistive Switches

Model of metallic filament formation and rupture in NiO for unipolar switching

2010 ◽  
Vol 81 (19) ◽  
Author(s):  
Hyung Dong Lee ◽  
Blanka Magyari-Köpe ◽  
Yoshio Nishi
Keyword(s):  
Filament Formation ◽  
Metallic Filament

scholarly journals In situ impedance spectroscopy of filament formation by resistive switches in polymer based structures

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
M. S. Kotova ◽  
K. A. Drozdov ◽  
T. V. Dubinina ◽  
E. A. Kuzmina ◽  
L. G. Tomilova ◽  
...  
Keyword(s):  
Impedance Spectroscopy ◽  
Filament Formation ◽  
Resistive Switches

Resistive Switching and Metallic-Filament Formation in Ag2S Nanowire Transistors

Small ◽  
2009 ◽  
Vol 5 (21) ◽  
pp. 2377-2381 ◽  
Author(s):  
Zhi-Min Liao ◽  
Chong Hou ◽  
Qing Zhao ◽  
Ding-Sheng Wang ◽  
Ya-Dong Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Filament Formation ◽  
Nanowire Transistors ◽  
Metallic Filament

Conditions for atomic imaging of mullite

1989 ◽  
Vol 47 ◽  
pp. 418-419
Author(s):  
T. A. Epicier ◽  
G. Thomas
Keyword(s):  
Oxygen Vacancies ◽  
High Resolution Electron Microscopy ◽  
Ceramic Materials ◽  
Work Conditions ◽  
Real Space ◽  
Potential Candidate ◽  
Silicate Mineral ◽  
Resolution Electron ◽  
The Subject ◽  
Aluminium Silicate

Mullite is an aluminium-silicate mineral of current interest since it is a potential candidate for high temperature applications in the ceramic materials field.In the present work, conditions under which the structure of mullite can be optimally imaged by means of High Resolution Electron Microscopy (HREM) have been investigated. Special reference is made to the Atomic Resolution Microscope at Berkeley which allows real space information up to ≈ 0.17 nm to be directly transferred; numerous multislice calculations (conducted with the CEMPAS programs) as well as extensive experimental through-focus series taken from a commercial “3:2” mullite at 800 kV clearly show that a resolution of at least 0.19 nm is required if one wants to get a straightforward confirmation of atomic models of mullite, which is known to undergo non-stoichiometry associated with the presence of oxygen vacancies.Indeed the composition of mullite ranges from approximatively 3Al2O3-2SiO2 (referred here as 3:2-mullite) to 2Al2O3-1SiO2, and its structure is still the subject of refinements (see, for example, refs. 4, 5, 6).

Investigation of Some Characterizations of Black TiO\(_2\) Nanotubes Via Spectroscopic Methods

2019 ◽  
Vol 29 (2) ◽  
pp. 189 ◽  
Author(s):  
Tho Truong Nguyen ◽  
Thi Minh Cao ◽  
Hieu Van Le ◽  
Viet Van Pham
Keyword(s):  
Water Splitting ◽  
Oxygen Vacancies ◽  
Light Response ◽  
Nanotube Arrays ◽  
Spectroscopic Methods ◽  
Visible Light Response ◽  
Uv Visible ◽  
Visible Reflectance ◽  
Splitting Effect ◽  
Anodization Method

The black TiO\(_2\) with substantial Ti\(^3+\) and oxygen vacancies exhibit an excellent photoelectrochemical water-splitting performance due to the improved charge transport the extended visible light response. In this study, black TiO\(_2\) nanotube arrays synthesized by the anodization method, and then, they have been investigated some characterizations by spectroscopic methods such as UV-visible reflectance (UV-vis DRS), Fourier-transform infrared spectroscopy (FTIR), Raman spectroscopy, and photoluminescence spectrum. The results showed that some highlighted properties of the black TiO2 nanotube arrays and they could apply for water-splitting effect.

Conductive Filament Formation in Printed Circuit Boards – Effects of Reflow Conditions and Flame Retardants

2009 ◽  
Author(s):  
Bhanu Sood ◽  
Michael Pecht
Keyword(s):  
Flame Retardants ◽  
Printed Circuit Boards ◽  
Electrochemical Process ◽  
Lead Free ◽  
Circuit Boards ◽  
Filament Formation ◽  
Conductive Filament ◽  
Printed Circuit ◽  
Free Solder ◽  
Halogen Free

Abstract Failures in printed circuit boards account for a significant percentage of field returns in electronic products and systems. Conductive filament formation is an electrochemical process that requires the transport of a metal through or across a nonmetallic medium under the influence of an applied electric field. With the advent of lead-free initiatives, boards are being exposed to higher temperatures during lead-free solder processing. This can weaken the glass-fiber bonding, thus enhancing conductive filament formation. The effect of the inclusion of halogen-free flame retardants on conductive filament formation in printed circuit boards is also not completely understood. Previous studies, along with analysis and examinations conducted on printed circuit boards with failure sites that were due to conductive filament formation, have shown that the conductive path is typically formed along the delaminated fiber glass and epoxy resin interfaces. This paper is a result of a year-long study on the effects of reflow temperatures, halogen-free flame retardants, glass reinforcement weave style, and conductor spacing on times to failure due to conductive filament formation.

Oxygen Vacancies in Zirconium Oxide as the Blue Luminescence Centers and Traps Responsible for Charge Transport

2020 ◽  
Author(s):  
Damir R. Islamov ◽  
Vladimir A. Gritsenko ◽  
Timofey V. Perevalov ◽  
Vladimir Sh. Aliev ◽  
Alexander P. Yelisseyev ◽  
...  
Keyword(s):  
Charge Transport ◽  
Zirconium Oxide ◽  
Oxygen Vacancies ◽  
Blue Luminescence ◽  
Luminescence Centers
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