The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack

2014 ◽  
Vol 104 (20) ◽  
pp. 202103 ◽  
Author(s):  
R. Winter ◽  
I. Krylov ◽  
J. Ahn ◽  
P. C. McIntyre ◽  
M. Eizenberg
Keyword(s):  
Work Function ◽  
Gate Stack ◽  
Effective Work ◽  
Effective Work Function ◽  
Oxide Deposition

Investigating doping effects on high-κ metal gate stack for effective work function engineering

2013 ◽  
Vol 88 ◽  
pp. 21-26 ◽  
Author(s):  
C. Leroux ◽  
S. Baudot ◽  
M. Charbonnier ◽  
A. Van Der Geest ◽  
P. Caubet ◽  
...  
Keyword(s):  
Work Function ◽  
Metal Gate ◽  
Gate Stack ◽  
Effective Work ◽  
Effective Work Function ◽  
Doping Effects

Interface dipole and effective work function of Re in Re∕HfO2∕SiOx∕n-Si gate stack

2006 ◽  
Vol 88 (7) ◽  
pp. 072907 ◽  
Author(s):  
Y. Liang ◽  
J. Curless ◽  
C. J. Tracy ◽  
D. C. Gilmer ◽  
J. K. Schaeffer ◽  
...  
Keyword(s):  
Work Function ◽  
Gate Stack ◽  
Effective Work ◽  
Effective Work Function ◽  
Interface Dipole

Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process

2004 ◽  
Author(s):  
Moon Sig Joo ◽  
Byung Jin Cho ◽  
D. Z. Chi ◽  
N. Balasubramanian ◽  
D.-L. Kwong
Keyword(s):  
High Temperature ◽  
Work Function ◽  
Gate Stack ◽  
Effective Work ◽  
Effective Work Function ◽  
High Temperature Process ◽  
High K

Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-Stack

2015 ◽  
Vol 62 (12) ◽  
pp. 3987-3991 ◽  
Author(s):  
Huy Binh Do ◽  
Quang Ho Luc ◽  
Minh Thien Huu Ha ◽  
Chenming Calvin Hu ◽  
Yueh Chin Lin ◽  
...  
Keyword(s):  
Work Function ◽  
Band Alignment ◽  
Gate Stack ◽  
Effective Work ◽  
Effective Work Function

Effective Work-Function Modulation by Aluminum-Ion Implantation for Metal-Gate Technology $(\hbox{Poly-Si/TiN/SiO}_{2})$

2007 ◽  
Vol 28 (12) ◽  
pp. 1089-1091 ◽  
Author(s):  
R. Singanamalla ◽  
H. Y. Yu ◽  
B. Van Daele ◽  
S. Kubicek ◽  
K. De Meyer
Keyword(s):  
Ion Implantation ◽  
Work Function ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function ◽  
Aluminum Ion

Impact of chemical bonding difference of ALD Mo on SiO2 and Al2O3 on the effective work function of the two gate stacks

2021 ◽  
Vol 39 (4) ◽  
pp. 043201
Author(s):  
Ekaterina Zoubenko ◽  
Sara Iacopetti ◽  
Kamira Weinfeld ◽  
Yaron Kauffmann ◽  
Patrick Van Cleemput ◽  
...  
Keyword(s):  
Work Function ◽  
Chemical Bonding ◽  
Gate Stacks ◽  
Effective Work ◽  
Effective Work Function
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