Site control technique for quantum dots using electron beam induced deposition

2014 ◽  
Author(s):  
Kanji Iizuka ◽  
JaeHun Jung ◽  
Hiroshi Yokota
1999 ◽  
Vol 583 ◽  
Author(s):  
Hitoshi Nakamura ◽  
Shigeru Kohmoto ◽  
Tomonori Ishikawa ◽  
Kiyoshi Asakawa

AbstractWe propose a novel site-control technique for strained quantum dots (QDs) based on nano-lithography using an STM integrated into a UHV STM/MBE multi-chamber system. A nano-scale deposit was formed on a GaAs surface by applying voltage between the GaAs surface and the tungsten tip of the STM. Since the deposit acted as a nano-mask, the subsequent GaAs growth formed a nano-hole just above the deposit. Subsequent InAs supply produced a QD on the hole site, and no QD was observed in any undesirable regions. We also observed the QD formation processes involved in the technique, based on step-by-step STM observations of the QD formation process. The observation directly revealed an InAs wetting layer formation with 1-ML thickness on the GaAs terraces followed by the QD formation in the Stranski-Krastanow growth mode.


2001 ◽  
Vol 30 (5) ◽  
pp. 482-486 ◽  
Author(s):  
M. Borgström ◽  
T. Bryllert ◽  
B. Gustafson ◽  
J. Johansson ◽  
T. Sass ◽  
...  

2001 ◽  
Vol 78 (10) ◽  
pp. 1367-1369 ◽  
Author(s):  
M. Borgstrom ◽  
J. Johansson ◽  
L. Samuelson ◽  
W. Seifert

2001 ◽  
Vol 224 (2) ◽  
pp. 521-526 ◽  
Author(s):  
S. Nishikawa ◽  
S. Kohmoto ◽  
H. Nakamura ◽  
T. Ishikawa ◽  
K. Asakawa ◽  
...  

2020 ◽  
Vol 44 (31) ◽  
pp. 13301-13307
Author(s):  
Wei Qi ◽  
Mengjie Li ◽  
Long Zhao

The fabrication of PL SiC-QDs by using ionic liquid-based microemulsions combined with electron beam radiation.


2014 ◽  
Vol 23 (8) ◽  
pp. 088111 ◽  
Author(s):  
Jing-Yue Fang ◽  
Shi-Qiao Qin ◽  
Xue-Ao Zhang ◽  
Dong-Qing Liu ◽  
Sheng-Li Chang

2008 ◽  
Vol 14 (S2) ◽  
pp. 242-243
Author(s):  
P Kruit ◽  
W van Dorp ◽  
K Hagen ◽  
PA Crozier

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008


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