Site control of InAs quantum dots on GaAs surfaces patterned by in situ electron-beam lithography

2000 ◽  
Vol 18 (6) ◽  
pp. 2635 ◽  
Author(s):  
T. Ishikawa ◽  
S. Kohmoto ◽  
S. Nishikawa ◽  
T. Nishimura ◽  
K. Asakawa
Keyword(s):  
Quantum Dots ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
Inas Quantum Dots ◽  
Site Control

Electron beam pre-patterning for site-control of self-assembled InAs quantum dots on Inp surfaces

2001 ◽  
Vol 30 (5) ◽  
pp. 482-486 ◽  
Author(s):  
M. Borgström ◽  
T. Bryllert ◽  
B. Gustafson ◽  
J. Johansson ◽  
T. Sass ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Beam ◽  
Inas Quantum Dots ◽  
Self Assembled ◽  
Site Control

scholarly journals Deterministic Integration of Quantum Dots into on-Chip Multimode Interference Beamsplitters Using in Situ Electron Beam Lithography

Nano Letters ◽  
2018 ◽  
Vol 18 (4) ◽  
pp. 2336-2342 ◽  
Author(s):  
Peter Schnauber ◽  
Johannes Schall ◽  
Samir Bounouar ◽  
Theresa Höhne ◽  
Suk-In Park ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
Multimode Interference ◽  
On Chip

Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates

2008 ◽  
Vol 93 (10) ◽  
pp. 101908 ◽  
Author(s):  
P. Atkinson ◽  
S. Kiravittaya ◽  
M. Benyoucef ◽  
A. Rastelli ◽  
O. G. Schmidt
Keyword(s):  
Quantum Dots ◽  
Controlled Growth ◽  
Patterned Substrates ◽  
Inas Quantum Dots

Initial Stages of InAs Quantum Dots Evolution in GaAs/AlAs Matrixes

2002 ◽  
Vol 749 ◽  
Author(s):  
Michael Yakimov ◽  
Vadim Tokranov ◽  
Alex Katnelson ◽  
Serge Oktyabrsky
Keyword(s):  
Quantum Dots ◽  
Direct Evidence ◽  
Matrix Material ◽  
Single Layer ◽  
High Energy ◽  
Inas Quantum Dots ◽  
Auger Signal ◽  
The Matrix ◽  
Growth Evolution

ABSTRACTWe have studied the first phases of post-growth evolution of InAs quantum dots (QDs) using in-situ Auger electron spectroscopy in conjunction with Reflection High Energy Electron Diffraction (RHEED). Direct evidence for InAs intermixing with about 6ML (monolayers) of the matrix material is found from Auger signal behavior during MBE overgrowth of InAs nanostructures. Re-establishment of 2D growth mode by overgrowth with GaAs or AlAs was monitored in single-layer and multi-layer QD structures using RHEED. Decay process of InAs QDs on the surface is found to have activation energy of about 1.1 eV that corresponds to In intermixing with the matrix rather than evaporation from the surface.

scholarly journals Universal direct patterning of colloidal quantum dots by (extreme) ultraviolet and electron beam lithography

Nanoscale ◽  
2020 ◽  
Vol 12 (20) ◽  
pp. 11306-11316
Author(s):  
Christian D. Dieleman ◽  
Weiyi Ding ◽  
Lianjia Wu ◽  
Neha Thakur ◽  
Ivan Bespalov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Beam ◽  
Electron Beam Lithography ◽  
Extreme Ultraviolet ◽  
Luminescent Properties ◽  
Colloidal Quantum Dots ◽  
Direct Patterning ◽  
One Step ◽  
Patterning Technique

A general, one-step patterning technique for colloidal quantum dots by direct optical or e-beam lithography. Photons (5.5–91.9 eV) and electrons (3 eV–50 kV) crosslink and immobilize QDs down to tens of nm while preserving the luminescent properties.

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