An efficient fast response and high-gain solar-blind flexible ultraviolet photodetector employing hybrid geometry

2014 ◽  
Vol 104 (19) ◽  
pp. 193301 ◽  
Author(s):  
Amreen A. Hussain ◽  
Arup R. Pal ◽  
Dinkar S. Patil
Keyword(s):  
Fast Response ◽  
High Gain ◽  
Ultraviolet Photodetector ◽  
Solar Blind

scholarly journals Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction

Nanophotonics ◽  
2018 ◽  
Vol 7 (9) ◽  
pp. 1557-1562 ◽  
Author(s):  
Tao He ◽  
Yukun Zhao ◽  
Xiaodong Zhang ◽  
Wenkui Lin ◽  
Kai Fu ◽  
...  
Keyword(s):  
Response Times ◽  
Nanowire Array ◽  
Graphene Film ◽  
Fast Response ◽  
Nanowire Arrays ◽  
Monolayer Graphene ◽  
Ultraviolet Photodetector ◽  
Solar Blind ◽  
Decay Times ◽  
First Time

AbstractIn this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga2O3 nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga2O3 nanowire arrays have been realized. Ga2O3 nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n-doped Si substrate. Then, a monolayer graphene film was transferred to Ga2O3 nanowires to form the graphene/vertical Ga2O3 nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3×104 at the bias of −5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga2O3 nanowire array heterojunction structure.

High sensitivity and fast response self-powered solar-blind ultraviolet photodetector with a β-Ga2O3/spiro-MeOTAD p–n heterojunction

2020 ◽  
Vol 8 (13) ◽  
pp. 4502-4509 ◽  
Author(s):  
Zuyong Yan ◽  
Shan Li ◽  
Zeng Liu ◽  
Yusong Zhi ◽  
Jie Dai ◽  
...  
Keyword(s):  
High Sensitivity ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
Uv Photodetector ◽  
Inorganic P ◽  
Solar Blind ◽  
Self Powered

A β-Ga2O3/spiro-MeOTAD organic–inorganic p–n heterojunction was fabricated for use in a high sensitivity and fast response self-powered solar-blind UV photodetector.

scholarly journals A self-powered solar-blind ultraviolet photodetector based on a Ag/ZnMgO/ZnO structure with fast response speed

RSC Advances ◽  
2017 ◽  
Vol 7 (22) ◽  
pp. 13092-13096 ◽  
Author(s):  
Ming-Ming Fan ◽  
Ke-Wei Liu ◽  
Xing Chen ◽  
Zhen-Zhong Zhang ◽  
Bing-Hui Li ◽  
...  
Keyword(s):  
Response Speed ◽  
Fast Response ◽  
Ultraviolet Photodetector ◽  
Uv Photodetectors ◽  
Solar Blind ◽  
Self Powered

Realization of Ag/ZnMgO/ZnO photodetectors provides a feasible route to develop self-powered solar-blind UV photodetectors with fast response speed.

Fast-response solar-blind ultraviolet photodetector with a graphene/β-Ga2O3/graphene hybrid structure

2017 ◽  
Vol 692 ◽  
pp. 634-638 ◽  
Author(s):  
Meilin Ai ◽  
Daoyou Guo ◽  
Yingyu Qu ◽  
Wei Cui ◽  
Zhenping Wu ◽  
...  
Keyword(s):  
Fast Response ◽  
Hybrid Structure ◽  
Ultraviolet Photodetector ◽  
Solar Blind

Growth and characterization of β-Ga2O3 thin films by sol-gel method for fast-response solar-blind ultraviolet photodetectors

2018 ◽  
Vol 766 ◽  
pp. 601-608 ◽  
Author(s):  
Hao Shen ◽  
Yinong Yin ◽  
Kun Tian ◽  
Karthikeyan Baskaran ◽  
Libing Duan ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Fast Response ◽  
Gel Method ◽  
Sol Gel Method ◽  
Solar Blind ◽  
Ultraviolet Photodetectors

Solution-assembled nanowires for high performance flexible and transparent solar-blind photodetectors

2015 ◽  
Vol 3 (3) ◽  
pp. 596-600 ◽  
Author(s):  
Jiangxin Wang ◽  
Chaoyi Yan ◽  
Meng-Fang Lin ◽  
Kazuhito Tsukagoshi ◽  
Pooi See Lee
Keyword(s):  
High Performance ◽  
Switching Time ◽  
Ultraviolet Photodetector ◽  
Assembly Method ◽  
Solar Blind

An all-NW ultraviolet photodetector with high photoresponse and improved switching time was fabricated by a solution assembly method.

10 Gb/s Burst-Mode Transimpedance Preamplifier in 0.13µm CMOS Technology

2012 ◽  
Vol 241-244 ◽  
pp. 2215-2220
Author(s):  
Gao Wei Gu ◽  
En Zhu
Keyword(s):  
Gain Control ◽  
Cmos Technology ◽  
Fast Response ◽  
High Gain ◽  
Settling Time ◽  
Output Buffer ◽  
Peak Detector ◽  
Burst Mode ◽  
Variable Gain ◽  
Response Peak

A 10Gbit/s burst-mode transimpedance preamplifier is described. Regulated cascade (RGC) TIA core with variable gain, fast response peak detector, single-to-differential and output buffer are included, providing auto-gain-control and threshold extraction functions. The burst-mode preamplifier is implemented by 0.13µm CMOS technology, presents a high gain of 67.9dB with a 3-dB bandwidth of 6.92GHz and a low gain of 57.4dB with a 3-dB bandwidth of 8.60GHz with a settling time less than 20ns.

Performance of A Single Phosphorus-doped β-Ga2O3 Microwire Solar-blind Ultraviolet Photodetector

2021 ◽  
Vol 42 (11) ◽  
pp. 1653-1660
Author(s):  
Qiu-ju FENG ◽  
◽  
Jin-zhu XIE ◽  
Zeng-jie DONG ◽  
Chong GAO ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
Solar Blind ◽  
Phosphorus Doped
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