scholarly journals Vapor liquid solid-hydride vapor phase epitaxy (VLS-HVPE) growth of ultra-long defect-free GaAs nanowires: Ab initio simulations supporting center nucleation

2014 ◽  
Vol 140 (19) ◽  
pp. 194706 ◽  
Author(s):  
Yamina André ◽  
Kaddour Lekhal ◽  
Philip Hoggan ◽  
Geoffrey Avit ◽  
Fabian Cadiz ◽  
...  
Keyword(s):  
Ab Initio ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Vapor Liquid Solid ◽  
Ab Initio Simulations ◽  
Gaas Nanowires ◽  
Vapor Liquid

Vapor–liquid–solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy

2004 ◽  
Vol 464-465 ◽  
pp. 244-247 ◽  
Author(s):  
S. Bhunia ◽  
T. Kawamura ◽  
S. Fujikawa ◽  
H. Nakashima ◽  
K. Furukawa ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Vapor Liquid Solid ◽  
Vertically Aligned ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy

2017 ◽  
Vol 28 (12) ◽  
pp. 125602 ◽  
Author(s):  
Zhenning Dong ◽  
Yamina André ◽  
Vladimir G Dubrovskii ◽  
Catherine Bougerol ◽  
Christine Leroux ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Gaas Nanowires

scholarly journals Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 833 ◽  
Author(s):  
Vladimir G. Dubrovskii ◽  
Hadi Hijazi
Keyword(s):  
Growth Cycle ◽  
Hydride Vapor Phase Epitaxy ◽  
Island Growth ◽  
Vapor Liquid Solid ◽  
Catalyst Droplet ◽  
Si Doping ◽  
Time Scale Separation ◽  
Gaas Nanowires ◽  
Si Doped ◽  
Vapor Liquid

III–V nanowires grown by the vapor–liquid–solid method often show self-regulated oscillations of group V concentration in a catalyst droplet over the monolayer growth cycle. We investigate theoretically how this effect influences the electron-to-hole ratio in Si-doped GaAs nanowires. Several factors influencing the As depletion in the vapor–liquid–solid nanowire growth are considered, including the time-scale separation between the steps of island growth and refill, the “stopping effect” at very low As concentrations, and the maximum As concentration at nucleation and desorption. It is shown that the As depletion effect is stronger for slower nanowire elongation rates and faster for island growth relative to refill. Larger concentration oscillations suppress the electron-to-hole ratio and substantially enhance the tendency for the p-type Si doping of GaAs nanowires, which is a typical picture in molecular beam epitaxy. The oscillations become weaker and may finally disappear in vapor deposition techniques such as hydride vapor phase epitaxy, where the n-type Si doping of GaAs nanowires is more easily achievable.

Growth of GaN Nanorods by a Hydride Vapor Phase Epitaxy Method

2002 ◽  
Vol 14 (13-14) ◽  
pp. 991-993 ◽  
Author(s):  
H.-M. Kim ◽  
D.S. Kim ◽  
Y.S. Park ◽  
D.Y. Kim ◽  
T.W. Kang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Control of Surface Morphology during the Growth of (110)-Oriented GaAs by Hydride Vapor Phase Epitaxy

2021 ◽  
Author(s):  
Wondwosen Metaferia ◽  
Anna K. Braun ◽  
John Simon ◽  
Corinne E. Packard ◽  
Aaron J. Ptak ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
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