The influence of the droplet composition on the vapor-liquid-solid growth of InAs nanowires on GaAs (1¯1¯1¯)B by metal-organic vapor phase epitaxy

2008 ◽  
Vol 104 (11) ◽  
pp. 114315 ◽  
Author(s):  
Jens Bauer ◽  
Volker Gottschalch ◽  
Gerald Wagner
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Vapor Liquid Solid ◽  
Organic Vapor ◽  
Metal Organic ◽  
Inas Nanowires ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Vapor–liquid–solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxy

2004 ◽  
Vol 464-465 ◽  
pp. 244-247 ◽  
Author(s):  
S. Bhunia ◽  
T. Kawamura ◽  
S. Fujikawa ◽  
H. Nakashima ◽  
K. Furukawa ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Vapor Liquid Solid ◽  
Vertically Aligned ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

InAs Nanowires Grown by Metal–Organic Vapor-Phase Epitaxy (MOVPE) Employing PS/PMMA Diblock Copolymer Nanopatterning

Nano Letters ◽  
2013 ◽  
Vol 13 (12) ◽  
pp. 5979-5984 ◽  
Author(s):  
Yinggang Huang ◽  
Tae Wan Kim ◽  
Shisheng Xiong ◽  
Luke J. Mawst ◽  
Thomas F. Kuech ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Diblock Copolymer ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Inas Nanowires

Selective GaSb radial growth on crystal phase engineered InAs nanowires

Nanoscale ◽  
2015 ◽  
Vol 7 (23) ◽  
pp. 10472-10481 ◽  
Author(s):  
Luna Namazi ◽  
Malin Nilsson ◽  
Sebastian Lehmann ◽  
Claes Thelander ◽  
Kimberly A. Dick
Keyword(s):  
Vapor Phase ◽  
Radial Growth ◽  
Vapor Phase Epitaxy ◽  
Selective Growth ◽  
Crystal Phase ◽  
Organic Vapor ◽  
Zinc Blende ◽  
Metal Organic ◽  
Inas Nanowires

In this work we have developed InAs nanowire templates, with designed zinc blende and wurtzite segments, for selective growth of radial GaSb heterostructures using metal organic vapor phase epitaxy.

Bottom-Up Formation of Vertical Free-Standing Semiconductor Nanowires Hybridized with Ferromagnetic Nanoclusters

2014 ◽  
Vol 783-786 ◽  
pp. 1990-1995 ◽  
Author(s):  
Shinjiro Hara
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Free Standing ◽  
Bottom Up ◽  
Semiconductor Nanowire ◽  
Organic Vapor ◽  
Selective Area ◽  
Gaas Nanowires ◽  
Metal Organic ◽  
Inas Nanowires

The author introduces and summarizes the results on bottom-up formation and structural characterizations obtained so far for the MnAs nanoclusters and MnAs/semiconductor nanowire hybrids. First, MnAs nanoclusters were grown by selective-area metal-organic vapor phase epitaxy. They had a hexagonal NiAs-type crystal structure. Their <00(0)1> direction was parallel to <111>B direction of zinc-blende-type GaAs substrates. Hybrid MnAs/GaAs nanowires, subsequently, were fabricated by combining selective-area metal-organic vapor phase epitaxy of GaAs nanowire templates and endotaxial MnAs nanoclustering on them. MnAs nanoclusters ordered at six ridges of hexagonal GaAs nanowires were formed possibly owing to more atomic steps between {0-11} crystal facets. In the case of hybrid MnA/InAs nanowires, MnAs nanoclusters were not formed only on the {0-11} side-walls, and/or ridges between them, but on the top {111}B crystal facets of hexagonal InAs nanowires. MnAs nanoclusters were formed much deeper into the InAs nanowires than into the GaAs nanowires. These facts are possibly due to the InAs nanowires are thermally less stable than the GaAs nanowires. Some of the hybrid MnA/InAs nanowires were bent at the parts where the MnAs nanoclusters were grown into the host nanowires mainly owing to the strain effects.

Kinetic Analysis of InN Selective Area Metal–Organic Vapor Phase Epitaxy

2008 ◽  
Vol 1 ◽  
pp. 071102 ◽  
Author(s):  
Tomonari Shioda ◽  
Masakazu Sugiyama ◽  
Yukihiro Shimogaki ◽  
Yoshiaki Nakano
Keyword(s):  
Kinetic Analysis ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Selective Area ◽  
Metal Organic
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