Investigation of defects in In–Ga–Zn oxide thin film using electron spin resonance signals

2014 ◽  
Vol 115 (16) ◽  
pp. 163707 ◽  
Author(s):  
Yusuke Nonaka ◽  
Yoichi Kurosawa ◽  
Yoshihiro Komatsu ◽  
Noritaka Ishihara ◽  
Masashi Oota ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Oxide Thin Film ◽  
Spin Resonance

The Roles of Several E′ Variants in Thermal Gate Oxide Reliability

1994 ◽  
Vol 338 ◽  
Author(s):  
John F. Conley ◽  
P.M. Lenahan ◽  
H.L. Evans ◽  
R.K. Lowry ◽  
T.J. Morthorst
Keyword(s):  
Thin Film ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Vacuum Ultraviolet ◽  
Charge Injection ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Oxide Reliability ◽  
Spin Resonance ◽  
Thermally Grown

ABSTRACTWe combine electron spin resonance measurements with vacuum ultraviolet, ultraviolet, and corona bias charge injection schemes to examine the properties and charge trapping roles of three E′ variants in conventionally processed thermally grown thin film SiO2 on Si.

Electron Spin Resonance in GaN Thin Film Doped with Fe

2007 ◽  
Vol 46 (2) ◽  
pp. 581-585 ◽  
Author(s):  
Takanari Kashiwagi ◽  
Saki Sonoda ◽  
Haruhiko Yashiro ◽  
Yujiro Ishihara ◽  
Akira Usui ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Spin Resonance

Electron spin resonance in thin film silicon after low temperature electron irradiation

2007 ◽  
Vol 515 (19) ◽  
pp. 7513-7516 ◽  
Author(s):  
O. Astakhov ◽  
F. Finger ◽  
R. Carius ◽  
A. Lambertz ◽  
Yu. Petrusenko ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Spin Resonance ◽  
Low Temperature ◽  
Electron Spin ◽  
Electron Irradiation ◽  
Thin Film Silicon ◽  
Spin Resonance ◽  
Temperature Electron

scholarly journals Spin-states in MoS2 thin-film transistors distinguished by operando electron spin resonance

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Naho Tsunetomo ◽  
Shohei Iguchi ◽  
Małgorzata Wierzbowska ◽  
Akiko Ueda ◽  
Yousang Won ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Spin Resonance ◽  
Electron Spin ◽  
Thin Film Transistors ◽  
Degrees Of Freedom ◽  
Theoretical Calculations ◽  
Resonance Spectroscopy ◽  
Transition Metal Dichalcogenide ◽  
Spin States ◽  
Spin Resonance

AbstractTransition metal dichalcogenide MoS2 is a two-dimensional material, attracting much attention for next-generation applications thanks to rich functionalities stemming from its crystal structure. Many experimental and theoretical works have focused on the spin-orbit interaction which couples the valley and spin degrees of freedom so that the spin-states can be electrically controllable. However, the spin-states of charge carriers and atomic vacancies in devices have not been yet elucidated directly from a microscopic viewpoint. Here, we report the spin-states in thin-film transistors using operando electron spin resonance spectroscopy. We have observed clearly different electron spin resonance signals of the conduction electrons and atomic vacancies, and distinguished the corresponding spin-states from the signals and theoretical calculations, evaluating the gate-voltage dependence and the spin-susceptibility and g-factor temperature dependence. This analysis gives deep insight into the MoS2 magnetism and clearly indicates different spin-scattering mechanisms compared to graphene, which will be useful for improvements of the device characteristics and new applications.

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