Structural and optical properties of Sn1−xFexO2 thin films prepared by flash evaporation technique

2014 ◽  
Author(s):  
M. Kuppan ◽  
S. Kaleemulla ◽  
N. Madhusudhana Rao ◽  
N. Sai Krishna ◽  
M. Rigana Begam
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Flash Evaporation ◽  
Structural And Optical Properties ◽  
Evaporation Technique

Structural and optical properties of Tin Oxide and Indium doped SnO2 thin films deposited by thermal evaporation technique

2016 ◽  
Vol 12 (3) ◽  
pp. 4394-4399
Author(s):  
Sura Ali Noaman ◽  
Rashid Owaid Kadhim ◽  
Saleem Azara Hussain
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Pure Sno2 ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Evaporation Technique ◽  
Sno2 Thin Films

Tin Oxide and Indium doped Tin Oxide (SnO2:In) thin films were deposited on glass and Silicon  substrates  by  thermal evaporation technique.  X-ray diffraction pattern of  pure SnO2 and SnO2:In thin films annealed at 650oC and the results showed  that the structure have tetragonal phase with preferred orientation in (110) plane. AFM studies showed an inhibition of grain growth with increase in indium concentration. SEM studies of pure  SnO2 and  Indium doped tin oxide (SnO2:In) ) thin films showed that the films with regular distribution of particles and they have spherical shape.  Optical properties such as  Transmission , optical band-gap have been measured and calculated.

Optical Properties of Thin Films of Haycockite

MRS Advances ◽  
2019 ◽  
Vol 4 (37) ◽  
pp. 2023-2033
Author(s):  
Barys Korzun ◽  
Marin Rusu ◽  
Thomas Dittrich ◽  
Anatoly Galyas ◽  
Andrey Gavrilenko
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Chemical Composition ◽  
Energy Band ◽  
Surface Photovoltage ◽  
Second Phase ◽  
Energy Band Gap ◽  
Flash Evaporation ◽  
Glass Substrates ◽  
Evaporation Technique

ABSTRACTThin films of haycockite Cu4Fe5S8 on glass substrates were deposited by flash evaporation technique from powders of this compound. The composition of thin films correspond to the atomic content of Cu, Fe, and S of 24.13, 27.90, and 47.97 at.% with the Cu/ Fe and S/ (Cu + Fe) atomic ratios of 0.87 and 0.92 respectively, whereas the corresponding theoretical values for this material amount to 0.80 and 0.89. The as-prepared thin films of haycockite consist of a set of separate fractions of approximately identical areas of about 400 - 600 μm2. It can be assumed that this structure evolved during cooling down of thin films since it completely covers the surface of thin films. A small inclusion of a second phase with the chemical composition close to talnakhite Cu9Fe8S16 is also observed. Haycockite Cu4Fe5S8 is found to be a direct gap semiconductor with the energy band gap Eg equal to 1.26 eV as determined using both transmission and surface photovoltage methods.

EFFECT OF ANNEALING AND SnO2 ADDITION ON PROPERTIES OF NANOSTRUCTURED ZnO THIN FILMS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 1007-1011
Author(s):  
VIPIN KUMAR JAIN ◽  
PRAVEEN KUMAR ◽  
DEEPIKA BHANDARI ◽  
Y. K. VIJAY
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Surface Composition ◽  
Atomic Ratio ◽  
Flash Evaporation ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Post Annealing ◽  
Zinc Tin Oxide ◽  
Evaporation Technique

In the present work, Zinc–Tin–Oxide (ZTO) thin films were deposited on glass substrate with varying concentration ( ZnO:SnO2 -100:0, 90:10, 70:30 and 50:50 wt.%) at room temperature by flash evaporation technique. These deposited ZTO film were annealed in vacuum to study the thermal stability and to see the effects on the structural and optical properties. The XRF spectra revealed the presence of Zinc and Tin with varying concentration in ZTO thin films. XRD results show the crystallinity of the ZTO films was improved with increasing the concentration of SnO2 and post annealing. The surface composition and oxidation state were analyzed by X-ray photoelectron spectroscopy. The variation of % composition shows as the concentration of SnO2 increases from 0 to 50%, the atomic ratio of Sn/Zn and O/Zn increases for both types of ZTO films and deficiency of oxygen has been appeared after annealing. The optical band gap was also found to be decreased for both types of films with increasing concentration of SnO2 .

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