Electron-electron interaction, weak localization and spin valve effect in vertical-transport graphene devices

2014 ◽  
Vol 104 (15) ◽  
pp. 153114 ◽  
Author(s):  
Mingsheng Long ◽  
Youpin Gong ◽  
Xiangfei Wei ◽  
Chao Zhu ◽  
Jianbao Xu ◽  
...  
Keyword(s):  
Spin Valve ◽  
Weak Localization ◽  
Vertical Transport ◽  
Electron Interaction ◽  
Valve Effect ◽  
Graphene Devices

Room temperature spin valve effect in the NiFe/Gr–hBN/Co magnetic tunnel junction

2016 ◽  
Vol 4 (37) ◽  
pp. 8711-8715 ◽  
Author(s):  
Muhammad Zahir Iqbal ◽  
Salma Siddique ◽  
Ghulam Hussain ◽  
Muhammad Waqas Iqbal
Keyword(s):  
Boron Nitride ◽  
Tunnel Junction ◽  
Room Temperature ◽  
Hexagonal Boron Nitride ◽  
Spin Valve ◽  
Magnetic Tunnel Junction ◽  
Valve Effect ◽  
First Time

Graphene and hexagonal boron nitride (hBN) have shown fascinating features in spintronics due to their metallic and tunneling behaviors, respectively. In this work, we report for the first time room temperature spin valve effect in NiFe/Gr–hBN/Co configuration.

Electron weak localization and electron–electron interaction effects on magneto-conductivity in In–Ga–Zn oxide films

2014 ◽  
Vol 551 ◽  
pp. 195-199 ◽  
Author(s):  
Bunju Shinozaki ◽  
Kazuya Hidaka ◽  
Syouhei Ezaki ◽  
Kazumasa Makise ◽  
Takayuki Asano ◽  
...  
Keyword(s):  
Oxide Films ◽  
Weak Localization ◽  
Interaction Effects ◽  
Electron Interaction

Field Effect and Spin-Valve Effect in the PbSnTe Topological Crystalline Insulator

2020 ◽  
Vol 56 (5) ◽  
pp. 553-557
Author(s):  
A. S. Tarasov ◽  
V. A. Golyashov ◽  
D. V. Ishchenko ◽  
I. O. Akhundov ◽  
A. E. Klimov ◽  
...  
Keyword(s):  
Field Effect ◽  
Spin Valve ◽  
Valve Effect ◽  
Topological Crystalline Insulator

Spin Valve Effect in a Magnetic Nanoelectromechanical Shuttle

2008 ◽  
Vol 100 (11) ◽  
Author(s):  
Rui-Qiang Wang ◽  
Baigeng Wang ◽  
D. Y. Xing
Keyword(s):  
Spin Valve ◽  
Valve Effect

Separating weak-localization and electron-electron-interaction contributions to the conductivity of carbon nanostructures

2007 ◽  
Vol 105 (1) ◽  
pp. 223-226 ◽  
Author(s):  
E. N. Tkachev ◽  
A. I. Romanenko ◽  
O. B. Anikeeva ◽  
T. I. Buryakov ◽  
V. E. Fedorov ◽  
...  
Keyword(s):  
Carbon Nanostructures ◽  
Weak Localization ◽  
Electron Interaction

Localization and Electron-Electron Interaction Effects in Platinum Silicide Thin Wires

1986 ◽  
Vol 76 ◽  
Author(s):  
S. Ishida ◽  
K. Murase ◽  
Y. Shimamoto ◽  
K. Ishibashi ◽  
K. Gamo ◽  
...  
Keyword(s):  
Ion Beam ◽  
Weak Localization ◽  
Impurity Scattering ◽  
Surface Region ◽  
Electron Interaction ◽  
Physical Parameters ◽  
Superconducting Transition ◽  
Platinum Silicide ◽  
Thin Wires ◽  
Scattering Time

ABSTRACTThe low-temperature magnetoresistance of PtSi thin wires of varying width, prepared with different mask elements (Cu and Ni) in the reactive ion beam etching, has been studied, to determine the width dependence of the physical parameters in the weak localization. A drastic decrease of the magnetic impurity scattering time τs and that of the superconducting transition temperature Tc have been found for the wires prepared by Ni mask with narrowing width, which suggests that the phase coherence of diffusing electrons responsible for the weak localization and the superconductivity are strongly affected by the presence of a small amount of Ni impurities recoil implanted into the surface region of the sidewalls of wires.

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